Zithetha ntoni izikhonkwane ezithathu u-G, S, kunye no-D we-MOSFET epakishiweyo?

Le yipaketheI-MOSFETinzwa ye-infrared ye-pyroelectric. Isakhelo esixande yifestile yokuva. I-G pin yitheminali ephantsi, i-D pin yidreyini yangaphakathi ye-MOSFET, kwaye i-S pin ngumthombo wangaphakathi we-MOSFET. Kwisekethe, i-G iqhagamshelwe emhlabeni, i-D iqhagamshelwe kunikezelo lwamandla olulungileyo, imiqondiso ye-infrared ifakwa efestileni, kwaye imiqondiso yombane iphuma kwi-S.

Isango loMgwebo uG

Umqhubi we-MOS ikakhulu udlala indima yokubunjwa kwamaza kunye nokuphucula ukuqhuba: Ukuba i-G signal waveform yeI-MOSFETayithathi ngokwaneleyo, iya kubangela ukulahleka okukhulu kwamandla ngexesha lenqanaba lokutshintsha. Impembelelo yayo yecala kukunciphisa ukusebenza kakuhle kokuguqulwa kwesekethe. I-MOSFET iya kuba nomkhuhlane omkhulu kwaye yonakaliswe lula bubushushu. Kukho isakhono esithile phakathi kwe-MOSFETGS. , ukuba amandla okuqhuba umqondiso we-G asanelanga, kuyakuchaphazela ngokunzulu ixesha lokutsiba kwe-waveform.

Ixesha elifutshane le-GS pole, khetha inqanaba le-R × 1 le-multimeter, udibanise uvavanyo olumnyama olukhokelela kwisibonda se-S, kwaye uvavanyo olubomvu lukhokelela kwi-P pole. Uxhathiso kufuneka lube Ω ezimbalwa ukuya ngaphezulu kweshumi Ω. Ukuba kufunyaniswe ukuba ukuchasana kwepini ethile kunye nezikhonkwane zayo ezimbini azinasiphelo, kwaye kusekugqibeleni emva kokutshintshiselana ngeentambo zokuvavanya, kuqinisekiswa ukuba le phini yi-G pole, kuba ifakwe kwezinye izikhonkwane ezimbini.

Qinisekisa umthombo S kwaye ukhuphe i-D

Seta i-multimeter kwi-R × 1k kwaye ulinganise ukuchasana phakathi kwezikhonkwane ezintathu ngokulandelanayo. Sebenzisa indlela yokukhokela uvavanyo lotshintshiselwano ukulinganisa ukuchasana kabini. Lowo unexabiso eliphantsi lokumelana (ngokubanzi amawaka ambalwa Ω ukuya ngaphezulu kwamawaka alishumi Ω) kukuxhathisa phambili. Ngeli xesha, uvavanyo olumnyama lukhokelela kwi-S pole kwaye i-red test lead ixhunywe kwi-D pole. Ngenxa yeemeko ezahlukeneyo zovavanyo, ixabiso elilinganisiweyo le-RDS(on) liphezulu kunexabiso eliqhelekileyo elinikwe kwincwadana.

MalungaI-MOSFET

I-transistor inejelo lohlobo lwe-N ngoko ibizwa ngokuba yi-N-channelI-MOSFET, okanyeNMOS. I-P-channel MOS (PMOS) FET ikwakhona, eyi-PMOSFET eyenziwe yi-N-type BACKGATE enedope kancinane kunye nomthombo wohlobo lwe-P kunye nomsele.

Nokuba yoluphi uhlobo lwe-N okanye i-P-uhlobo lwe-MOSFET, umgaqo wayo wokusebenza uyafana. I-MOSFET ilawula umsinga kwi-drain ye-terminal ephumayo ngombane osetyenziswa kwisango le-terminal yokufaka. I-MOSFET sisixhobo esilawulwa ngamandla ombane. Ilawula iimpawu zesixhobo ngokusebenzisa i-voltage esetyenziswe kwisango. Ayibangeli umphumo wokugcinwa kwentlawulo obangelwa yisiseko samanje xa i-transistor isetyenziselwa ukutshintsha. Ngoko ke, ekutshintsheni izicelo,Ii-MOSFETskufuneka itshintshe ngokukhawuleza kune-transistors.

I-FET ikwafumana igama layo kwinto yokuba igalelo layo (elibizwa ngokuba yisango) lichaphazela umsinga oqukuqelayo kwi-transistor ngokuveza ibala lombane kwi-insulating layer. Enyanisweni, akukho okwangoku uhamba kule insulator, ngoko ke i-GATE yangoku yetyhubhu ye-FET incinci kakhulu.

Eyona FET ixhaphakileyo isebenzisa umaleko obhityileyo wesilicon dioxide njengesigqubuthelo esingaphantsi kweGATE.

Olu hlobo lwe-transistor lubizwa ngokuba yi-metal oxide semiconductor (MOS) transistor, okanye, i-metal oxide semiconductor field effect transistor (MOSFET). Ngenxa yokuba ii-MOSFET zincinci kwaye zinamandla ngakumbi, zithathe indawo ye-bipolar transistors kwizicelo ezininzi.