Yeyiphi imimandla emine ye-MOSFET?

Imimandla emine ye-N-chaneli yokuphucula i-MOSFET

(1) Ummandla wokuchasana oguquguqukayo (okwabizwa ngokuba ngummandla ongaxutywanga)

I-Ucs" Ucs (th) (i-voltage yokuvula), i-UDs" UGs-Ucs (th), ngummandla ongasekhohlo komkhondo obekwe ngaphambili kumfanekiso apho umjelo uvuliwe. Ixabiso le-UDs lincinci kulo mmandla, kwaye ukuchasana kweshaneli kulawulwa kuphela yi-UGs. Xa i-uGs iqinisekile, i-ip kunye nee-UDs kubudlelwane bomgca, ummandla uqikelelwa njengeseti yemigca ethe tye. Ngeli xesha, ityhubhu yempembelelo yentsimi D, S phakathi kokulingana kwe-UGS yombane

Ilawulwa yi-voltage ye-UGS yokumelana nokuguquguquka.

(2) ummandla oqhubekayo wangoku (okwabizwa ngokuba ngummandla wokugcwalisa, ummandla wokukhulisa, ummandla osebenzayo)

Ucs ≥ Ucs (h) kunye no-Ubs ≥ UcsUssth), kumfanekiso wecala lasekunene le-pre-pinch off track, kodwa ayikaqhekezwa kummandla, kummandla, xa i-uGs kufuneka ibe, ib phantse ayenzi utshintsho kunye UDs, luphawu rhoqo-yangoku. i ilawulwa kuphela UGs, emva koko MOSFETD, S ilingana voltage uGs ulawulo lomthombo wangoku. I-MOSFET isetyenziswa kwiisekethe zokwandisa, ngokubanzi kumsebenzi we-MOSFET D, S ilingana nomthombo wangoku wolawulo we-voltage uGs. I-MOSFET esetyenziswa kwiisekethe zokwandisa, isebenza ngokubanzi kwingingqi, eyaziwa ngokuba yindawo yokwandisa.

(3) Indawo yokucupha (ekwabizwa ngokuba yindawo yokusika)

Indawo yokucupha (ekwaziwa nje ngokuba yindawo esikiweyo) ukuhlangabezana no-ucs "Ues (th) kumfanekiso okufutshane ne-axis ethe tye yommandla, itshaneli yonke icinezelwe, eyaziwa ngokuba yi-clip epheleleyo icinyiwe, io = 0 , ityhubhu ayisebenzi.

(4) indawo yokwahlulahlula

Ummandla wokuqhekeka ubekwe kwingingqi kwicala lasekunene lomzobo. Ngokunyuka kwe-UDs, i-PN junction iphantsi kwe-voltage eninzi ye-reverse kunye nokuphuka, i-ip inyuka ngokukhawuleza. Umbhobho kufuneka usebenze ukwenzela ukuba ugweme ukusebenza kwindawo yokuphuka. Ijika leempawu zotshintshiselwano zinokufunyanwa kwigophe lophawu lwemveliso. Kwindlela esetyenziswa njengegrafu ukufumana. Ngokomzekelo, kwi-Figure 3 (a) ye-Ubs = i-6V yomgca othe nkqo, ukuhlangana kwayo kunye neengqungquthela ezahlukeneyo ezihambelana ne-i, Us amaxabiso kwi-ib- Uss ulungelelaniso oludityaniswe kwi-curve, oko kukuthi, ukufumana ijika lempawu zokudlulisa.

Iiparamitha zeI-MOSFET

Zininzi iiparamitha ze-MOSFET, kubandakanywa iiparamitha ze-DC, iiparamitha ze-AC kunye neeparamitha zomda, kodwa kuphela ezi parameters zilandelayo ziphambili ekufuneka zixhaswe ngokusetyenziswa ngokufanayo: i-saturated drain-source yangoku ye-IDSS pinch-off voltage Up, (i-junction-type iityhubhu kunye nokuncipha -uhlobo lweetyhubhu zesango ezivaliweyo, okanye i-voltage yokuvula i-UT (iityhubhu zesango ezifakwe i-insulated-insulated), i-trans-conductance gm, umthombo wokuvuza Ukophuka kwamandla ombane e-BUDS, amandla aphezulu achithakeleyo e-PDSM, kunye ne-IDSM ephezulu yomthombo wangoku.

(1) Umsinga wokuhambisa amanzi

I-IDSS yangoku ye-drain yangoku ngumjelo okhoyo kumjelo wokudityaniswa okanye uhlobo lokuncipha kwesango eligqunyiweyo le-MOSFET xa umbane wesango u-UGS = 0.

(2) I-Clip-off voltage

I-pinch-off voltage UP yivolyutha yesango kuhlobo lwesiphambuka okanye unciphiso-isango le-MOSFET eligqunyiweyo elivele liqhawule phakathi komsele kunye nomthombo. Njengoko kuboniswe kwi-4-25 kwi-tube ye-N-channel UGS ijika le-ID, inokuqondwa ukubona ukubaluleka kwe-IDSS kunye ne-UP.

Imimandla emine ye-MOSFET

(3) Umbane wokuvula

Amandla ombane wokuvula i-UT ngumbane wesango kwi-MOSFET eyomeleziweyo eyenza i-inter-drain-source iqhube kakuhle.

(4) Ukuziphatha

I-transconductance gm yikhono lokulawula i-voltage yomthombo wesango i-UGS kwi-ID yangoku ye-drain, oko kukuthi, umlinganiselo wenguqu kwi-ID yangoku ye-drain kwinguqu kwi-voltage yomthombo wesango i-UGS. I-9m yiparameter ebalulekileyo enobunzima besakhono sokukhulisa iI-MOSFET.

(5) Khupha amandla ombane wokuqhawula umthombo

Amandla ombane oqhawulwa yimvelaphi yomthombo we-BUDS ibhekisa kumthombo wamandla ombane wesango i-UGS ethile, umsebenzi oqhelekileyo we-MOSFET unokwamkela owona mbane uphezulu womthombo wokuhambisa amanzi. Lo ngumlinganiselo weparamitha, eyongezwe kumbane wokusebenza we-MOSFET kufuneka ube ngaphantsi kwe-BUDS.

(6) Ukuchithwa kwamandla aphezulu

Ubuninzi bokutshatyalaliswa kwamandla PDSM ikwayipharamitha emiselweyo, ibhekisa kwiI-MOSFETukusebenza akuwohloki xa owona mthombo uvumelekileyo wokuvuza uchithakala. Xa usebenzisa i-MOSFET ukusetyenziswa kwamandla okusebenzayo kufuneka kube ngaphantsi kwe-PDSM kwaye ushiye umda othile.

(7) Ubuninzi boMbhobho okhoyo ngoku

Ubuninzi bokuvuza kwangoku i-IDSM yenye iparameter yomlinganiselo, ibhekisa kumsebenzi wesiqhelo we-MOSFET, umthombo wokuvuza kowona mlinganiselo mkhulu wangoku ovunyelweyo ukudlula kumsinga wokusebenza we-MOSFET akufuneki ugqithe kwi-IDSM.

UMmiselo wokuSebenza we-MOSFET

Umgaqo wokusebenza we-MOSFET (i-N-channel yokuphucula i-MOSFET) kukusebenzisa i-VGS ukulawula isixa "se-inductive charge", ukuze kuguqulwe imeko yejelo lokuqhuba eliqulunqwe zezi "inductive charge", kwaye ke ukuphumeza injongo. yokulawula umsinga wedrain. Injongo kukulawula i-drain current. Ekwenziweni kweetyhubhu, ngenkqubo yokwenza inani elikhulu leeyoni ezilungileyo kwi-insulating layer, ngoko ke kwelinye icala le-interface inokunyanzelwa ukuba ibe neentlawulo ezimbi ngakumbi, ezi zityholo ezimbi zinokufakwa.

Xa i-voltage yesango itshintsha, isixa sentlawulo esinyanzelwa kwisitishi siphinde sitshintshe, ububanzi beshaneli eqhubayo buyatshintsha, kwaye ngaloo ndlela i-ID yangoku itshintsha nge-voltage yesango.

Indima ye-MOSFET

I. I-MOSFET inokusetyenziselwa ukukhulisa. Ngenxa yegalelo eliphezulu le-impedance ye-MOSFET amplifier, i-coupling capacitor ingaba umthamo omncinci, ngaphandle kokusetyenziswa kwee-electrolytic capacitors.

Okwesibini, i-impedance ephezulu ye-MOSFET ifanelekile kakhulu kuguqulelo lwe-impedance. Ngokuqhelekileyo isetyenziswe kwinqanaba le-multi-stage amplifier igalelo lokuguqulwa kwe-impedance.

I-MOSFET ingasetyenziswa njenge-resistor variable.

Okwesine, i-MOSFET inokusetyenziswa ngokulula njengomthombo okhoyo ngoku.

Okwesihlanu, i-MOSFET ingasetyenziswa njengokutshintsha kombane.