(1) Impembelelo yokulawula i-vGS kwi-ID kunye nejelo
① Imeko ye-vGS=0
Ingabonwa ukuba kukho imidibaniso emibini yokubuyela umva ye-PN phakathi kwedreyini kunye nemithombo yendlela yokuphucula.I-MOSFET.
Xa i-voltage yomthombo wesango i-vGS = 0, nokuba i-vDS yomthombo we-drain-source yongezwa, kwaye kungakhathaliseki ukuba i-polarity ye-vDS, kusoloko kukho i-PN junction kwi-reverse biased state.Akukho mjelo wokuqhuba phakathi kombhobho kunye nomthombo, ngoko i-ID yangoku ye-ID≈0 ngeli xesha.
② Ityala le-vGS>0
Ukuba i-vGS> 0, intsimi yombane iveliswa kwi-SiO2 insulating layer phakathi kwesango kunye ne-substrate.Isalathiso sommandla wombane si-perpendicular kwintsimi yombane eqondiswe ukusuka kwisango ukuya kwi-substrate kwindawo ye-semiconductor.Lo mmandla wombane ugxotha imingxuma kwaye utsale ii-electron.Imingxuma yokugxotha: Imingxuma kwi-substrate yohlobo lwe-P kufuphi nesango iyagxothwa, ishiya iiyoni zokuvuma ezingashukumiyo (iioni ezingalunganga) zenze umaleko wokuncipha.I-electron ekhangayo: Ii-electron (abathwali abambalwa) kwi-substrate yohlobo lwe-P batsalwa kumphezulu we-substrate.
(2) Ukwenziwa komjelo wokuqhuba:
Xa ixabiso le-vGS lincinci kwaye ukukwazi ukutsala ii-electron akunamandla, akukho mzila oqhubayo phakathi kwe-drain kunye nomthombo.Njengoko i-vGS isanda, ii-electron ezininzi zitsalwa kumaleko womphezulu we-P substrate.Xa i-vGS ifikelela kwixabiso elithile, ezi zi-electron zenza i-N-uhlobo oluncinci oluncinci kumphezulu we-P substrate kufuphi nesango kwaye zidibaniswe nemimandla emibini ye-N +, eyenza i-N-type conductive channel phakathi kwe-drain kunye nomthombo.Uhlobo lwayo lwe-conductivity luchasene ne-P substrate, ngoko ikwabizwa ngokuba yi-inversion layer.I-vGS enkulu kukuba, intsimi yombane inamandla esebenza kumphezulu we-semiconductor, ii-electron ezininzi zitsalwa kumphezulu we-P substrate, i-channel conductive ingqimba, kwaye incinci ukuchasana kwetshaneli.I-voltage yomthombo wesango xa umjelo uqalisa ukwenza umbane ubizwa ngokuba yi-voltage yokuvula, emelwe yi-VT.
![I-MOSFET](http://www.olukey.com/uploads/图片-13.jpg)
IN-ijelo I-MOSFETkuxoxwe ngasentla ayikwazi ukwenza i-channel conductive xa i-vGS
Ixesha lokuposa: Nov-12-2023