(1) Impembelelo yokulawula i-vGS kwi-ID kunye nejelo
① Imeko ye-vGS=0
Ingabonwa ukuba kukho imidibaniso emibini yokubuyela umva ye-PN phakathi kwedreyini kunye nemithombo yendlela yokuphucula.I-MOSFET.
Xa i-voltage yomthombo wesango i-vGS = 0, nokuba i-vDS yomthombo we-drain-source yongezwa, kwaye kungakhathaliseki ukuba i-polarity ye-vDS, kusoloko kukho i-PN junction kwi-reverse biased state. Akukho mjelo wokuqhuba phakathi kombhobho kunye nomthombo, ngoko i-ID yangoku ye-ID≈0 ngeli xesha.
② Ityala le-vGS>0
Ukuba i-vGS> 0, intsimi yombane iveliswa kwi-SiO2 insulating layer phakathi kwesango kunye ne-substrate. Isalathiso sommandla wombane si-perpendicular kwintsimi yombane eqondiswe ukusuka kwisango ukuya kwi-substrate kwindawo ye-semiconductor. Lo mmandla wombane ugxotha imingxuma kwaye utsale ii-electron. Imingxuma yokugxotha: Imingxuma kwi-substrate yohlobo lwe-P kufuphi nesango iyagxothwa, ishiya iiyoni zokuvuma ezingashukumiyo (iioni ezingalunganga) zenze umaleko wokuncipha. I-electron ekhangayo: Ii-electron (abathwali abambalwa) kwi-substrate yohlobo lwe-P batsalwa kumphezulu we-substrate.
(2) Ukwenziwa komjelo wokuqhuba:
Xa ixabiso le-vGS lincinci kwaye ukukwazi ukutsala ii-electron akunamandla, akukho mzila oqhubayo phakathi kwe-drain kunye nomthombo. Njengoko i-vGS isanda, ii-electron ezininzi zitsalwa kumaleko womphezulu we-P substrate. Xa i-vGS ifikelela kwixabiso elithile, ezi zi-electron zenza i-N-uhlobo oluncinci oluncinci kumphezulu we-P substrate kufuphi nesango kwaye zidibaniswe nemimandla emibini ye-N +, eyenza i-N-type conductive channel phakathi kwe-drain kunye nomthombo. Uhlobo lwayo lwe-conductivity luchasene ne-P substrate, ngoko ikwabizwa ngokuba yi-inversion layer. I-vGS enkulu kukuba, intsimi yombane inamandla esebenza kumphezulu we-semiconductor, ii-electron ezininzi zitsalwa kumphezulu we-P substrate, i-channel conductive ingqimba, kwaye incinci ukuchasana kwetshaneli. I-voltage yomthombo wesango xa umjelo uqalisa ukwenza umbane ubizwa ngokuba yi-voltage yokuvula, emelwe yi-VT.
IN-ijelo I-MOSFETkuxoxwe ngasentla ayikwazi ukwenza i-channel conductive xa i-vGS <VT, kwaye ityhubhu ikwimeko yokunqunyulwa. Kuphela kuxa i-vGS≥VT inokwenziwa itshaneli. Olu hloboI-MOSFETekufuneka yenze itshaneli yokuqhuba xa i-vGS≥VT ibizwa ngokuba yindlela yokuphuculaI-MOSFET. Emva kokuba ishaneli yenziwe, i-drain current yenziwa xa i-voltage yangaphambili i-vDS isetyenziswa phakathi kwe-drain kunye nomthombo. Impembelelo ye-vDS kwi-ID, xa i-vGS> VT kunye nexabiso elithile, impembelelo ye-drain-source voltage vDS kwi-channel conductive kunye ne-ID yangoku ifana ne-junction field effect transistor. Ukuhla kwamandla ombane okwenziwa yi-ID yangoku ye-drain ecaleni kwetshaneli yenza i-voltages phakathi kwendawo nganye kwijelo kunye nesango lingasalingani. I-voltage ekupheleni kufuphi nomthombo ngowona mkhulu, apho umjelo unzima kakhulu. I-voltage ekupheleni kwe-drain yincinci, kwaye ixabiso layo yi-VGD=vGS-vDS, ngoko ke umjelo ngowona mncinci apha. Kodwa xa i-vDS incinci (vDS
Ixesha lokuposa: Nov-12-2023
