Kutheni amandla ombane eMOSFET alawulwa?

Ii-MOSFETs (i-Metal Oxide Semiconductor Field Effect Transistors) zibizwa ngokuba zizixhobo ezilawulwa ngamandla ombane ikakhulu ngenxa yokuba umgaqo wazo wokusebenza uxhomekeke ikakhulu kulawulo lwamandla ombane wesango (Vgs) phezu kombhobho wangoku (Id), endaweni yokuxhomekeka kumbane ukuwulawula, njengoko. kunjalo nge-bipolar transistors (njenge-BJTs). Oku kulandelayo yinkcazo eneenkcukacha yeMOSFET njengesixhobo esilawulwa ngamandla ombane:

UmGaqo wokuSebenza

Ulawulo lombane weSango:Intliziyo ye-MOSFET ilele kulwakhiwo phakathi kwesango layo, umthombo kunye nedreyini, kunye nomaleko wokugquma (ngokuqhelekileyo isilicon dioxide) ngaphantsi kwesango. Xa i-voltage isetyenziswe kwisango, intsimi yombane yenziwa phantsi kwe-insulating layer, kwaye le ntsimi iguqula ukuhanjiswa kwendawo phakathi komthombo kunye ne-drain.

Ulwakhiwo lwesijelo esiKhokelayo:Kwi-N-channel MOSFETs, xa i-voltage yesango i-Vgs iphezulu ngokwaneleyo (ngaphezu kwexabiso elithile elibizwa ngokuba yi-threshold voltage Vt), ii-electron ezikwi-substrate yohlobo lwe-P ngaphantsi kwesango zitsaleleka kwicala elingaphantsi le-insulating layer, zenza i-N- chwetheza umjelo olawulayo ovumela ukuhanjiswa phakathi komthombo kunye ne-drain. Ngokuchaseneyo, ukuba i-Vgs ingaphantsi kune-Vt, itshaneli yokuqhuba ayiqulunqwanga kwaye i-MOSFET ivaliwe.

Khupha ulawulo lwangoku:ubukhulu bombhobho we-ID wangoku ulawulwa ikakhulu yi-voltage yesango i-Vgs. I-Vgs ephezulu, i-wide ye-channel eqhubayo yenziwa, kwaye inkulu i-ID yangoku ye-drain. Olu dlelwane luvumela i-MOSFET ukuba isebenze njengesixhobo sangoku esilawulwa ngamandla ombane.

Piezo Iimpawu eziluncedo

UNgeniso oluPhezulu:I-impedance yegalelo ye-MOSFET iphezulu kakhulu ngenxa yokwahlukaniswa kwesango kunye nommandla wokukhupha umthombo ngumaleko okhuselayo, kwaye isango langoku liphantse libe ngu-zero, okwenza kube luncedo kwiisekethe apho kufuneka i-impedance ephezulu.

Ingxolo ephantsi:Ii-MOSFETs zivelisa ingxolo ephantsi xa zisebenza, ubukhulu becala ngenxa yokungaphumeleli kwazo okuphezulu kunye ne-unipolar carrier conduction mechanism.

Isantya sokutshintsha ngokukhawuleza:Ekubeni ii-MOSFET zizixhobo ezilawulwa yi-voltage, isantya sazo sokutshintsha sihlala sikhawuleza kuneso se-bipolar transistors, ekufuneka ihambe kwinkqubo yokugcina intlawulo kunye nokukhululwa ngexesha lokutshintsha.

Ukusetyenziswa kwamandla aphantsi:Eburhulumenteni, ukuxhathisa kwe-drain-source (RDS(on)) ye-MOSFET iphantsi, nto leyo inceda ekucutheni ukusetyenziswa kwamandla. Kwakhona, kwimeko ye-cutoff, ukusetyenziswa kwamandla okumileyo kuphantsi kakhulu kuba isango langoku liphantse libe ngu-zero.

Isishwankathelo, ii-MOSFETs zibizwa ngokuba zizixhobo ezilawulwa yi-voltage kuba umgaqo wazo wokusebenza uxhomekeke kakhulu kulawulo lwe-drain yangoku ngumbane wesango. Olu phawu lulawulwa yi-voltage lwenza ukuba ii-MOSFET zithembise uluhlu olubanzi lwezicelo kwiisekethe zombane, ngakumbi apho kufuneka i-impedance ephezulu, ingxolo ephantsi, isantya sokutshintsha ngokukhawuleza kunye nokusetyenziswa kwamandla aphantsi.