Uthini umgaqo wokusebenza kweMOSFET?

I-MOSFET (i-FieldEffect Transistor abbreviation (FET)) isihlokoI-MOSFET. ngenani elincinane labathwali ukuba bathathe inxaxheba ekuqhutyweni kwe-thermal, eyaziwa ngokuba yi-multi-pole junction transistor. Ihlelwa njengesixhobo esilawulwa yi-voltage semi-superconductor. Ukuchasana kwemveliso ekhoyo kuphezulu (10 ^ 8 ~ 10 ^ 9 Ω), ingxolo ephantsi, ukusetyenziswa kwamandla aphantsi, uluhlu lwe-static, kulula ukudibanisa, akukho nto yesibini yokuphazamiseka, umsebenzi we-inshurensi yolwandle olubanzi kunye nezinye izinto ezilungileyo, ngoku zitshintshile I-bipolar junction transistor kunye ne-transistor ye-junction yamandla yabadibanisi abomeleleyo.

Iimpawu ze-MOSFET

Okokuqala: I-MOSFET sisixhobo sokulawula amandla ombane, ngeVGS (isango lombane lomthombo wesango) ukuya kwi-ID (drain DC);

Isibini:I-MOSFET'simveliso DC incinane kakhulu, ngoko ukumelana imveliso yayo inkulu kakhulu.

Ezintathu: isetyenziswe abathwali abambalwa ukuqhuba ukushisa, kwaye ngoko inomlinganiselo ongcono wokuzinza;

Eyesine: iqulethwe indlela encitshisiweyo yokunciphisa umbane we-coefficients encinci ukuba ibe yincinci kune-transistor iqulethe indlela yokunciphisa umbane wokunciphisa ama-coefficients amancinci;

Okwesihlanu: Amandla okuthintela imisebe yeMOSFET;

Isithandathu: ngenxa yokuba akukho msebenzi uphosakeleyo wokusabalalisa okuncinci okubangelwa ngamasuntswana omsindo osasazekileyo, kuba ingxolo iphantsi.

Umgaqo womsebenzi we-MOSFET

I-MOSFETumgaqo umsebenzi kwisivakalisi esinye, oko kukuthi, "drain - umthombo uhambe umjelo phakathi ID, kunye electrode kunye umjelo phakathi pn yakhiwe ibe reverse bias electrode ombane ukuze master ID". Ngokuchanekileyo, i-amplitude ye-ID kwisiphaluka, oko kukuthi, i-channel cross-sectional area, yi-pn junction counter-biased variation, ukwenzeka kwe-depletion layer ukuze kwandiswe ukuhluka kwe-mastery yesizathu. Kulwandle olungahluthiyo lwe-VGS=0, ukwandiswa komgangatho wenguqu ebonakalisiweyo akukukhulu kakhulu kuba, ngokutsho kwemagnethi ye-VDS eyongeziweyo phakathi kwe-drain-source, ezinye ii-electron kumthombo wolwandle zitsalwa kumjelo. , oko kukuthi, kukho umsebenzi we-ID ye-DC ukusuka kumbhobho ukuya kumthombo. Umaleko ophakathi okhulayo ukusuka kwisango ukuya kwi-drain uya kwenza uhlobo lokuvala umzimba wonke wetshaneli, i-ID epheleleyo. Jonga le pateni njenge-pinch-off. Oku kufanekisela ukuba umaleko wenguqu uthintela yonke itshaneli, kwaye akukhona ukuba i-DC inqunyulwe.

Kumaleko inguqu, kuba akukho self-intshukumo elektroni kunye nemingxuma, ngendlela yokwenyani iimpawu insulating ubukho jikelele DC yangoku kunzima ukuhamba. Nangona kunjalo, umhlaba wemagnethi phakathi kombhobho - umthombo, ekusebenzeni, idreyini yonxibelelwano yomaleko emibini kunye nepali yesango esezantsi ekhohlo, ngenxa yokuba intsimi yemagnethi yokukhukuliseka itsala i-elektroni enesantya esiphezulu ngokusebenzisa umaleko wenguqu. Ngenxa yokuba amandla ombane okhukulisekayo akatshintshi nje ukugcwala kwendawo ye-ID. Okwesibini, i-VGS ukuya kwindawo engalunganga yokutshintsha, ukuze i-VGS = i-VGS (icinywe), emva koko i-transition layer itshintsha kakhulu imilo yokugubungela ulwandle lonke. Kwaye intsimi magnetic of VDS yongezwa ubukhulu becala kwinguqu umaleko, intsimi kazibuthe ezitsala electron kwisikhundla drift, logama nje kufutshane kwipali umthombo elifutshane kakhulu zonke, nto leyo ngakumbi ukuba amandla DC ayikho. ekwaziyo ukuzinza.