Njengezinto ezitshintshayo, i-MOSFET kunye ne-IGBT zihlala zivela kwiisekethe ze-elektroniki. Zikwayafana ngenkangeleko kunye neeparamitha zeempawu. Ndiyakholelwa ukuba abantu abaninzi baya kuzibuza ukuba kutheni ezinye iisekethe zifuna ukusebenzisa i-MOSFET, ngelixa abanye besenza. IGBT?
Yintoni umahluko phakathi kwabo? Okulandelayo,Olukeyuyakuphendula imibuzo yakho!
Yintoni naI-MOSFET?
I-MOSFET, igama elipheleleyo lesiTshayina yi-metal-oxide semiconductor field effect transistor. Ngenxa yokuba isango lale ntsimi yempembelelo ye-transistor yodwa ngumaleko wokugquma, ikwabizwa ngokuba yi-insulated gate field effect transistor. I-MOSFET inokohlulwa ibe ziindidi ezimbini: "N-uhlobo" kunye "nohlobo lwe-P" ngokungqinelana ne-polarity "yetshaneli" yayo (i-carrier esebenzayo), edla ngokubizwa ngokuba yi-N MOSFET kunye ne-P MOSFET.
I-MOSFET ngokwayo ine-parasitic diode yayo, esetyenziselwa ukuthintela i-MOSFET ekutshiseni xa i-VDD i-over-voltage. Ngenxa yokuba ngaphambi kokuba ukugqithisa kubangele umonakalo kwi-MOSFET, i-diode iphinda ihlehlise kuqala kwaye iqondise i-current enkulu emhlabeni, ngaloo ndlela ikhusela i-MOSFET ekubeni itshiswe.
Yintoni i-IGBT?
I-IGBT (I-Insulated Gate Bipolar Transistor) sisixhobo se-semiconductor esixutywe ne-transistor kunye ne-MOSFET.
Iisimboli zesekethe ye-IGBT ayikadibani. Xa uzobe umzobo weskimu, iisimboli ze-triode kunye ne-MOSFET zibolekwa ngokubanzi. Ngeli xesha, unokugweba ukuba ngaba yi-IGBT okanye i-MOSFET ukusuka kwimodeli ephawulwe kumzobo wesicwangciso.
Kwangaxeshanye, kufuneka kwakhona ingqalelo ukuba IGBT ine diode umzimba. Ukuba ayiphawulwanga emfanekisweni, oko akuthethi ukuba ayikho. Ngaphandle kokuba idatha esemthethweni ichaza ngenye indlela, le diode ikhona. I-diode yomzimba ngaphakathi kwe-IGBT ayiyonto i-parasitic, kodwa imiselwe ngokukodwa ukukhusela i-fragile reverse ukumelana nombane we-IGBT. Ikwabizwa ngokuba yiFWD (freewheeling diode).
Ukwakhiwa kwangaphakathi kwezi zibini zahlukile
Iipali ezintathu ze-MOSFET zingumthombo (S), umsele (D) kunye nesango (G).
Izibonda ezintathu ze-IGBT ngabaqokeleli (C), emitter (E) kunye nesango (G).
I-IGBT yakhiwa ngokongeza umaleko owongezelelweyo kumbhobho we-MOSFET. Ulwakhiwo lwazo lwangaphakathi ngolu hlobo lulandelayo:
Iinkalo zokusetyenziswa kwezi zibini zahlukile
Ulwakhiwo lwangaphakathi lwe-MOSFET kunye ne-IGBT lwahlukile, olumisela iindawo zabo zesicelo.
Ngenxa yolwakhiwo lwe-MOSFET, luhlala lufikelela umsinga omkhulu, onokufikelela kwi-KA, kodwa amandla ombane ayimfuneko okumelana nesakhono asinamandla njenge-IGBT. Ezona ndawo zisetyenziswayo kukutshintsha izixhobo zombane, ii-ballasts, i-high-frequency induction heat, i-high-frequency inverter welding machines, izixhobo zombane zonxibelelwano kunye nezinye iindawo zokubonelela ngombane.
I-IGBT inokuvelisa amandla amaninzi, okwangoku kunye ne-voltage, kodwa i-frequency ayiphezulu kakhulu. Okwangoku, isantya sokutshintsha nzima se-IGBT sinokufikelela kwi-100KHZ. I-IGBT isetyenziswa ngokubanzi koomatshini be-welding, ii-inverters, ii-frequency converters, i-electroplating electrolytic power supply, i-ultrasonic induction heat kunye nezinye iindawo.
Iimpawu eziphambili ze-MOSFET kunye ne-IGBT
I-MOSFET ineempawu ze-impedance ephezulu, isantya sokutshintsha ngokukhawuleza, uzinzo oluhle lwe-thermal, ulawulo lwangoku lwangoku, njl. Kwisekethe, inokusetyenziswa njenge-amplifier, i-electronic switch kunye nezinye iinjongo.
Njengohlobo olutsha lwesixhobo se-electronic semiconductor, i-IGBT ineempawu ze-impedance ephezulu, ukusetyenziswa kwamandla ombane ophantsi, ukulawula isiphaluka esilula, ukuchasana nombane ophezulu, kunye nokunyamezela kwangoku, kwaye isetyenziswe ngokubanzi kwiisekethe ezahlukeneyo ze-elektroniki.
Isekethe efanelekileyo elinganayo ye-IGBT iboniswe kumzobo ongezantsi. I-IGBT eneneni yindibaniselwano ye-MOSFET kunye ne-transistor. I-MOSFET inesiphene sokuxhathisa okuphezulu, kodwa i-IGBT iyayoyisa le ntsilelo. I-IGBT isenokumelana okuphantsi kumbane ophezulu. .
Ngokubanzi, i-advanteji ye-MOSFET yeyokuba ineempawu ezintle zohlobo oluphezulu kwaye inokusebenza ngamaxesha angamakhulu e-kHz ukuya kuthi ga kwi-MHz. Ukungalungi kukuba i-on-resistance inkulu kwaye ukusetyenziswa kwamandla kukhulu kwi-high-voltage kunye neemeko eziphezulu zangoku. I-IGBT iqhuba kakuhle kwiimeko eziphantsi kunye neemeko zamandla aphezulu, kunye nokumelana okuncinci kunye nokumelana nombane ophezulu.
Khetha iMOSFET okanye IGBT
Kwisekethe, nokuba ukhetha i-MOSFET njengetyhubhu yokutshintsha amandla okanye i-IGBT ngumbuzo osoloko udibana neenjineli. Ukuba izinto ezinje ngombane, okwangoku, kunye namandla okutshintsha kwenkqubo zithathelwa ingqalelo, la manqaku alandelayo angashwankathelwa:
Abantu bahlala bebuza: "Ngaba i-MOSFET okanye i-IGBT ingcono?" Enyanisweni, akukho mahluko ulungileyo okanye umbi phakathi kwezi zimbini. Eyona nto ibalulekileyo kukubona usetyenziso lwayo lokwenyani.
Ukuba usenemibuzo malunga nomahluko phakathi kwe-MOSFET kunye ne-IGBT, ungaqhagamshelana no-Olukey ngeenkcukacha.
U-Olukey usasaza ubukhulu becala i-WINSOK ephakathi kunye nesezantsi imveliso yeMOSFET. Iimveliso zisetyenziswa kakhulu kushishino lwasemkhosini, iibhodi zomqhubi we-LED/LCD, iibhodi zokuqhuba iimoto, ukutshaja okukhawulezayo, icuba zombane, iimonitha zeLCD, izixhobo zombane, izixhobo zombane ezincinci zasekhaya, iimveliso zonyango, kunye neemveliso zeBluetooth. Izikali ze-elektroniki, i-electronics yezithuthi, iimveliso zenethiwekhi, izixhobo zasekhaya, iiperipheral zekhompyutha kunye neemveliso ezahlukeneyo zedijithali.
Ixesha lokuposa: Dec-18-2023
