Zimbini iindidi eziphambili zeMOSFET: uhlobo lwesiphambuka sokwahlulwa kunye nohlobo lwesango eligqunyiweyo. IJunction MOSFET (JFET) ithiywe ngenxa yokuba ineendibaniselwano ezimbini zePN, kunye nesango eligqunyiweyoI-MOSFET(JGFET) ibizwa ngokuba isango likhuselwe ngokupheleleyo kwezinye ii-electrode. Okwangoku, phakathi kwee-MOSFET zamasango agqunyiweyo, eyona isetyenziswa kakhulu yi-MOSFET, ebizwa ngokuba yi-MOSFET (i-metal-oxide-semiconductor MOSFET); ukongeza, kukho i-PMOS, i-NMOS kunye ne-VMOS yamandla e-MOSFET, kunye neemodyuli zamandla ze-πMOS kunye ne-VMOS ezisanda kuqaliswa.
Ngokwezixhobo ezahlukeneyo ze-semiconductor ye-channel, uhlobo lwe-junction kunye nohlobo lwesango lokukhusela luhlulwe lube ngumtshaneli kunye ne-P channel. Ukuba yahlulwe ngokwemo ye-conductivity, i-MOSFET inokohlulwa ibe luhlobo lokuncipha kunye nodidi lophuculo. I-Junction MOSFETs zonke luhlobo lokuncipha, kwaye ii-MOSFET zesango eligqunyiweyo luhlobo lokuncipha kunye nodidi lophuculo.
I-Field effect transistors inokohlulwa ibe yi-junction field effect transistors kunye ne-MOSFETs. Ii-MOSFET zahlulwe zaba ziindidi ezine: uhlobo lokuncipha kwe-N-channel kunye nohlobo lokuphucula; Uhlobo lwe-P-channel yokuncipha kunye nohlobo lokuphucula.
Iimpawu zeMOSFET
Uphawu lwe-MOSFET yi-UG yesango lasezantsi; elawula i-ID yayo yangoku. Xa kuthelekiswa ne-bipolar transistors eqhelekileyo, ii-MOSFET zineempawu zokungaphumeleli kwegalelo eliphezulu, ingxolo ephantsi, uluhlu olukhulu oluguquguqukayo, ukusetyenziswa kwamandla aphantsi, kunye nokudityaniswa lula.
Xa ixabiso elipheleleyo le-voltage ye-bias negative (-UG) inyuka, i-depletion layer iyanda, i-channel iyancipha, kwaye i-ID yangoku ye-drain iyancipha. Xa ixabiso elipheleleyo le-voltage ye-bias negative (-UG) iyancipha, i-depletion layer iyancipha, i-channel iyanda, kwaye i-ID yangoku ye-drain iyanda. Inokubonwa ukuba i-ID yangoku ye-drain ilawulwa yi-voltage yesango, ngoko ke i-MOSFET sisixhobo esilawulwa ngamandla ombane, oko kukuthi, utshintsho kwimveliso yangoku lulawulwa lutshintsho kwi-voltage yegalelo, ukuze kuphunyezwe ukukhulisa ezinye iinjongo.
Njenge-bipolar transistors, xa i-MOSFET isetyenziswa kwiisekethe ezinjengokwandiswa, i-voltage ye-bias kufuneka yongezwe kwisango layo.
Isango letyhubhu yempembelelo yentsimi ye-junction kufuneka isetyenziswe nge-voltage ye-bias ye-reverse, oko kukuthi, i-voltage yesango engafanelekanga kufuneka ifakwe kwi-tube ye-N-channel kwaye i-claw yesango elungileyo kufuneka ifakwe kwi-tube ye-P-channel. Isango elomeleziweyo eligqunyiweyo I-MOSFET kufuneka ifake amandla ombane wesango langaphambili. Amandla ombane wesango lemowudi yokuncipha ekhusela i-MOSFET inokuba yelungileyo, ingalunganga, okanye "0". Iindlela zokongeza i-bias zibandakanya indlela echanekileyo ye-bias, indlela yokubonelela ngokuzimeleyo, indlela yokudibanisa ngokuthe ngqo, njl.
I-MOSFETineeparamitha ezininzi, kubandakanywa iiparamitha zeDC, iiparamitha zeAC kunye neeparamitha zomda, kodwa kusetyenziso oluqhelekileyo, kufuneka unikele ingqalelo kuphela kwezi parameters eziphambili zilandelayo: i-drain-source yangoku ye-IDSS pinch-off voltage Up, (i-junction ityhubhu kunye nemowudi yokuncipha igqunyiwe. ityhubhu yesango, okanye ukuvula i-Voltage UT (i-tube yesango ye-insulated insulated), i-transconductance gm, i-drain-source breakdown voltage BUDS, i-PDSM yokutshatyalaliswa kwamandla aphezulu kunye ne-IDSM ephezulu ye-drain-source yangoku.
(1) Umsinga womthombo wamanzi amdaka
I-IDSS yangoku yomthombo we-drain-source yangoku ibhekiselele kumthombo wamanzi we-drain-source current xa amandla ombane wesango i-UGS=0 ekudibaneni okanye ukuncipha kwesango eligqunyiweyo i-MOSFET.
(2)I-Pinch-off voltage
I-pinch-off voltage UP ibhekiselele kumbane wesango xa uqhagamshelo lomthombo wedreyini lunqunyulwa nje kwisiphambuka okanye uhlobo lokuncipha lwesango eligqunyiweyo le-MOSFET. Njengoko kuboniswe kwi-4-25 ye-UGS-ID ye-curve ye-tube ye-N-channel, intsingiselo ye-IDSS kunye ne-UP ingabonakala ngokucacileyo.
(3) Umbane wokuvula
Umbane wokuvula i-UT ubhekiselele kumbane wesango xa uqhagamshelo lomthombo wedreyini lwenziwa nje kwisango eligqunyiweyo le-MOSFET. Umzobo we-4-27 ubonisa i-UGS-ID ye-curve ye-tube ye-N-channel, kwaye intsingiselo ye-UT ingabonakala ngokucacileyo.
(4) Ukuziphatha
I-Transconductance gm imele amandla ombane wesango-umthombo we-UGS ukulawula i-ID yangoku ye-drain, oko kukuthi, umlinganiselo wenguqu kwi-ID yangoku ye-drain kwinguqu ye-voltage ye-UGS yesango. I-9m yiparameter ebalulekileyo yokulinganisa isakhono sokukhulisaI-MOSFET.
(5)Amandla ombane wokuqhekeka kwemithombo yamanzi
Amandla ombane wokuqhawula umthombo we-drain-source BUDS ubhekisa kumandla ombane ophuma kumthombo wokuhambisa amanzi aphezulu anokwamkelwa yi-MOSFET xa amandla ombane omthombo wesango i-UGS engaguquki. Le yiparamitha yokunciphisa, kwaye umbane osebenzayo osetyenziswa kwi-MOSFET kufuneka ube ngaphantsi kwe-BUDS.
(6)Ubukhulu bokutshatyalaliswa kwamandla
Owona mandla uphezulu wokuchitha amandla i-PDSM ikwayiparameter emiselweyo, ebhekisa kumandla okukhutshwa kwe-drain-source ubuninzi obuvumelekileyo ngaphandle kokuwohloka kokusebenza kwe-MOSFET. Xa isetyenziswa, olona setyenziso lwamandla lwe-MOSFET kufuneka lube ngaphantsi kwe-PDSM kwaye lushiye umda othile.
(7)Owona mthombo mkhulu wamanzi wokuhambisa amanzi
Ubukhulu be-IDSM yangoku ye-drain-source yangoku yenye ipharamitha elinganiselweyo, ebhekiselele kubuninzi bangoku obuvunyelwe ukuba budlule phakathi komsele kunye nomthombo xa i-MOSFET isebenza ngokwesiqhelo. Ukusebenza kwangoku kwe-MOSFET akufuneki kudlule kwi-IDSM.
1. I-MOSFET ingasetyenziselwa ukukhulisa. Ekubeni i-impedance yegalelo ye-MOSFET amplifier iphezulu kakhulu, i-coupling capacitor ingaba yincinci kwaye i-electrolytic capacitors akufuneki isetyenziswe.
2. I-impedance ephezulu ye-MOSFET ifaneleke kakhulu kwi-impedance transformation. Ihlala isetyenziselwa ukuguqulwa kwe-impedance kwinqanaba legalelo le-multi-stage amplifiers.
3. I-MOSFET ingasetyenziswa njenge-resistor variable.
4. I-MOSFET inokusetyenziswa ngokulula njengomthombo okhoyo ngoku.
5. I-MOSFET ingasetyenziswa njengokutshintsha kwe-elektroniki.
I-MOSFET ineempawu zokunganyangeki okuphantsi kwangaphakathi, amandla ombane aphezulu okumelana, ukutshintsha ngokukhawuleza, kunye namandla aphezulu e-avalanche. Ixesha eliyilelweyo langoku yi-1A-200A kunye ne-voltage span yi-30V-1200V. Sinokuhlengahlengisa iiparamitha zombane ngokweenkalo zesicelo somthengi kunye nezicwangciso zesicelo zokuphucula ukuthembeka kweMveliso yomthengi, ukusebenza kakuhle kokuguqulwa kunye nokukhuphisana kwexabiso lemveliso.
MOSFET vs Uthelekiso lweTransistor
(1) I-MOSFET yinto yokulawula amandla ombane, ngelixa i-transistor iyinto yolawulo lwangoku. Xa kuphela isixa esincinci sangoku sivunyelwe ukuba sithathwe kumthombo womqondiso, i-MOSFET kufuneka isetyenziswe; xa i-voltage yesignali iphantsi kwaye inani elikhulu langoku livunyelwe ukuba lithathwe kumthombo wesignali, kufuneka kusetyenziswe i-transistor.
(2) I-MOSFET isebenzisa iinqwelo-mafutha ezininzi ekuqhubeni umbane, ngoko ibizwa ngokuba sisixhobo se-unipolar, ngelixa ii-transistors zinazo zombini izithwali zombane kunye nabathwali abambalwa ukuba baqhube umbane. Ibizwa ngokuba sisixhobo esiyi-bipolar.
(3) Umthombo kunye nokutsalwa kwamanzi kwezinye ii-MOSFETs kunokusetyenziswa ngokutshintshanayo, kwaye amandla ombane esango anokuba alungile okanye angalunganga, abhetyebhetye ngakumbi kunee-transistors.
4 Ke ngoko, ii-MOSFETs zisetyenziswe ngokubanzi kwiisekethe ezinkulu ezihlanganisiweyo.
Indlela yokugweba umgangatho kunye ne-polarity ye-MOSFET
Khetha uluhlu lwe-multimeter ukuya kwi-RX1K, qhagamshela uvavanyo olumnyama olukhokelela kwisibonda se-D, kunye novavanyo olubomvu olukhokelela kwi-S pole. Chukumisa iipali ze-G kunye no-D ngaxeshanye ngesandla sakho. I-MOSFET kufuneka ibekwimeko yokuqhuba kwangoko, oko kukuthi, inaliti yemitha ijiwuka iye kwindawo enokumelana okuncinci. , kwaye emva koko ubambe izibonda ze-G kunye ne-S ngezandla zakho, i-MOSFET kufuneka ingabi nampendulo, oko kukuthi, inaliti yomitha ayiyi kubuyela emva kwindawo ye-zero. Ngeli xesha, kufuneka kugwetywe ukuba i-MOSFET yityhubhu elungileyo.
Khetha uluhlu lwe-multimeter ukuya kwi-RX1K, kwaye ulinganise ukuchasana phakathi kwezikhonkwane ezintathu ze-MOSFET. Ukuba ukuchasana phakathi kwesinye isikhonkwane kunye nezinye izikhonkwane ezibini akunasiphelo, kwaye kusengenasiphelo emva kokutshintshiselana ngeentambo zovavanyo, Ke le ipini yi-G pole, kwaye ezinye izikhonkwane ezimbini ziyi-S pole kunye ne-D pole. Emva koko sebenzisa i-multimeter ukulinganisa ixabiso lokuchasana phakathi kwe-S pole kunye ne-D pole kanye, utshintshiselwano lovavanyo kunye nokulinganisa kwakhona. Lowo unexabiso elincinane lokuxhathisa umnyama. Uvavanyo olukhokelela kuvavanyo luxhunywe kwi-S pole, kwaye i-red test lead ixhunywe kwi-P pole.
Ubhaqo lwe-MOSFET kunye nezilumkiso zokusetyenziswa
1. Sebenzisa i-pointer multimeter ukuchonga i-MOSFET
1) Sebenzisa indlela yokulinganisa ukuxhathisa ukuchonga i-electrodes ye-junction MOSFET
Ngokwemeko yokuba ixabiso lokuchasa phambili kunye nokubuyisela umva kwe-PN junction ye-MOSFET yahlukile, ii-electrodes ezintathu ze-MOSFET ezidibeneyo zinokuchongwa. Indlela ekhethekileyo: Misela i-multimeter kwi-R × 1k uluhlu, khetha nawaphi na ama-electrode amabini, kwaye ulinganise amaxabiso abo okumelana phambili kunye nokubuyisela umva ngokulandelanayo. Xa amaxabiso e-electrode amabini alingana kwaye angamawaka aliqela e-ohm, ke i-electrode ezimbini ziyi-drain D kunye nomthombo ongu-S ngokulandelelanayo. Ngenxa yokuba kwi-junction ye-MOSFETs, i-drain kunye nomthombo ziyatshintshiselwa, i-electrode eseleyo kufuneka ibe yisango G. Unokuphinda uthinte i-black test lead (i-red test lead nayo iyamkeleka) ye-multimeter kuyo nayiphi na i-electrode, kunye nolunye uvavanyo lukhokelela bamba i-electrode ezimbini eziseleyo ngokulandelelana ukulinganisa ixabiso lokumelana. Xa amaxabiso okumelana alinganiswa kabini aphantse alingane, i-electrode enxibelelana ne-black test lead isango, kwaye ezinye i-electrode ezimbini ziyi-drain kunye nomthombo ngokulandelelana. Ukuba amaxabiso okumelana alinganiswe kabini makhulu kakhulu, oko kuthetha ukuba isalathiso esingasemva se-PN junction, oko kukuthi, zombini zixhathisa umva. Inokumiselwa ukuba yi-N-channel MOSFET, kwaye i-black test lead iqhagamshelwe kwisango; ukuba amaxabiso okumelana alinganiswa kabini Amaxabiso okumelana mancinci kakhulu, abonisa ukuba yi-PN junction eya phambili, oko kukuthi, ukuchasana phambili, kwaye kumiselwe ukuba yi-P-channel MOSFET. I-black test lead iphinde idibaniswe nesango. Ukuba le meko ingentla ayenzeki, ungabuyisela isikhokelo sovavanyo olumnyama nobomvu kwaye uqhube uvavanyo ngokwendlela engentla de ichongiwe igridi.
2) Sebenzisa indlela yokulinganisa ukuxhathisa ukumisela umgangatho we-MOSFET
Indlela yokulinganisa ukuxhathisa kukusebenzisa i-multimeter ukulinganisa ukuxhathisa phakathi komthombo kunye ne-drain ye-MOSFET, isango kunye nomthombo, isango kunye ne-drain, isango le-G1 kunye nesango le-G2 ukufumanisa ukuba liyahambelana nexabiso lokumelana eliboniswe kwi-MOSFET manual. Ulawulo lulungile okanye lubi. Indlela ethile: Okokuqala, seta i-multimeter kuluhlu lwe-R × 10 okanye i-R × 100, kwaye ulinganise ukuchasana phakathi komthombo S kunye ne-drain D, ngokuqhelekileyo kuluhlu lwamashumi e-ohms ukuya kumawaka aliqela ohms (inokubonwa kwi. i-manual ukuba ii-tubes ezahlukeneyo zeemodeli, amaxabiso abo okuxhathisa ahlukeneyo), ukuba ixabiso elilinganisiweyo lokumelana likhulu kunexabiso eliqhelekileyo, linokuba ngenxa yoqhagamshelwano olubi lwangaphakathi; ukuba ixabiso lokuchasana elilinganisiweyo lingenasiphelo, linokuba yipali ephukile yangaphakathi. Emva koko usethe i-multimeter kwi-R × 10k uluhlu, uze ulinganise amaxabiso okumelana phakathi kwamasango e-G1 kunye ne-G2, phakathi kwesango kunye nomthombo, naphakathi kwesango kunye ne-drain. Xa amaxabiso okumelana nokulinganisa onke angenasiphelo, ngoko Kuthetha ukuba ityhubhu iyinto eqhelekileyo; ukuba amaxabiso angentla axhathisa ancinci kakhulu okanye kukho umendo, kuthetha ukuba ityhubhu imbi. Kufuneka kuqatshelwe ukuba ukuba amasango amabini aphukile kwi-tube, indlela yokutshintshwa kwecandelo ingasetyenziselwa ukufumanisa.
3) Sebenzisa indlela yokufaka umqondiso wokungeniswa ukuqikelela isakhono sokukhulisa iMOSFET
Indlela ethile: Sebenzisa inqanaba le-R × 100 lokumelana ne-multimeter, qhagamshela i-red test lead kumthombo we-S, kunye novavanyo olumnyama olukhokelela kwi-drain D. Yongeza i-voltage ye-1.5V yombane kwi-MOSFET. Ngeli xesha, ixabiso lokumelana phakathi kwe-drain kunye nomthombo liboniswa ngenaliti yomitha. Emva koko cinezela isango G lesiphambuka se-MOSFET ngesandla sakho, kwaye wongeze isignali yombane owenziweyo womzimba womntu esangweni. Ngale ndlela, ngenxa yempembelelo yokukhulisa umbhobho, i-VDS ye-drain-source voltage kunye ne-drain yangoku i-Ib iya kutshintsha, oko kukuthi, ukuchasana phakathi kwe-drain kunye nomthombo kuya kutshintsha. Ukusuka kule nto, kunokubonwa ukuba inaliti yemitha iyajika ukuya kwinqanaba elikhulu. Ukuba inaliti yegridi ebanjwe ngesandla ijika kancinci, oko kuthetha ukuba isakhono sokukhulisa umbhobho sihluphekile; ukuba inaliti ijika kakhulu, oko kuthetha ukuba amandla okukhulisa umbhobho mkhulu; ukuba inaliti ayishukumi, oko kuthetha ukuba ityhubhu imbi.
Ngokwale ndlela ingasentla, sisebenzisa isikali se-R×100 se-multimeter ukulinganisa i-junction MOSFET 3DJ2F. Okokuqala vula i-electrode ye-G yetyhubhu kwaye ulinganise i-RDS ye-drain-source resistance ibe yi-600Ω. Emva kokubamba i-electrode ye-G ngesandla sakho, inaliti yemitha ijinga ngasekhohlo. Uxhathiso olubonakalisiweyo lwe-RDS yi-12kΩ. Ukuba inaliti yemitha ijika ibe nkulu, oko kuthetha ukuba ityhubhu ilungile. , kwaye inamandla okukhulisa.
Kukho amanqaku ambalwa omele uwaqaphele xa usebenzisa le ndlela: Okokuqala, xa uvavanya i-MOSFET kwaye ubambe isango ngesandla sakho, inaliti ye-multimeter inokujikela ngasekunene (ixabiso lokumelana liyancipha) okanye ngakwesobunxele (ixabiso lokumelana landa) . Oku kungenxa yokuba amandla ombane e-AC angeniswa ngumzimba womntu aphakamile noko, kwaye ii-MOSFET ezahlukeneyo zinokuba neendawo ezahlukeneyo zokusebenza xa zilinganiswe ngoluhlu lokumelana (nokuba lusebenza kwindawo egcweleyo okanye kwindawo engaxutywanga). Uvavanyo lubonise ukuba i-RDS yeetyhubhu ezininzi ziyanda. Oko kukuthi, isandla sewotshi sijiwuzela ngasekhohlo; i-RDS yeetyhubhu ezimbalwa iyancipha, ibangela ukuba isandla sewotshi sijinge siye ngasekunene.
Kodwa kungakhathaliseki ukuba liphi na icala apho isandla sewotshi sijiwulwa, okoko nje isandla sewotshi sijika sisikhulu, oko kuthetha ukuba ityhubhu inamandla amakhulu okukhulisa. Okwesibini, le ndlela ikwasebenza kwii-MOSFETs. Kodwa kufuneka kuqatshelwe ukuba ukuchasana kwegalelo kwe-MOSFET kuphezulu, kwaye amandla ombane avunyelweyo wesango G akufuneki abe phezulu kakhulu, ke musa ukucofa isango ngqo ngezandla zakho. Kufuneka usebenzise i-insulated handle ye-screwdriver ukuze uthinte isango ngentonga yentsimbi. , ukuthintela intlawulo eyenziwa ngumzimba womntu ukuba ifakwe ngokuthe ngqo esangweni, ibangele ukuphuka kwesango. Okwesithathu, emva komlinganiselo ngamnye, izibonda ze-GS kufuneka zibe zifutshane. Oku kungenxa yokuba kuya kuba nexabiso elincinci lentlawulo kwi-GS junction capacitor, eyakha i-voltage ye-VGS. Ngenxa yoko, izandla zomitha azikwazi ukuhamba xa zilinganisa kwakhona. Indlela yodwa yokukhupha umrhumo kukunciphisa i-short-circuit intlawulo phakathi kwee-electrodes ze-GS.
4) Sebenzisa indlela yokulinganisa ukuxhathisa ukuchonga iiMOSFET ezingaphawulwanga
Okokuqala, sebenzisa indlela yokulinganisa ukuchasana ukufumana izikhonkwane ezimbini ezinemilinganiselo yokumelana, oko kukuthi umthombo S kunye ne-drain D. Izikhonkwane ezimbini eziseleyo ziyisango lokuqala le-G1 kunye nesango lesibini le-G2. Bhala phantsi ixabiso lokuxhathisa phakathi komthombo S kunye ne-drain D elinganiswe ngokukhokelela kovavanyo ezimbini kuqala. Tshintsha iintambo zovavanyo kwaye ulinganise kwakhona. Bhala phantsi ixabiso elilinganisiweyo lokumelana. Lowo unexabiso elikhulu lokuxhathisa elilinganiswe kabini likhokelo lovavanyo olumnyama. I-electrode edibeneyo yi-drain D; i-red test lead lead iqhagamshelwe kumthombo S. Izibonda ze-S kunye ne-D ezichongiweyo ngale ndlela nazo zinokuqinisekiswa ngokuqikelela ukukwazi ukukhulisa umbhobho. Oko kukuthi, uvavanyo olumnyama olukhokelela kwisakhono esikhulu sokukhulisa luqhagamshelwe kwisibonda se-D; i-red test lead lead ixhunywe emhlabeni kwi-8-pole. Iziphumo zovavanyo zazo zombini iindlela kufuneka zifane. Emva kokumisela izikhundla ze-drain D kunye nomthombo we-S, faka isiphaluka ngokwezikhundla ezihambelanayo ze-D kunye ne-S. Ngokuqhelekileyo, i-G1 kunye ne-G2 nayo iya kulungelelaniswa ngokulandelelana. Oku kugqiba izikhundla zamasango amabini e-G1 kunye ne-G2. Oku kugqiba ulandelelwano lwezikhonkwane ze-D, S, G1, kunye ne-G2.
I-5) Sebenzisa utshintsho kwixabiso lokumelana ne-reverse ukumisela ubungakanani be-transconductance
Xa ulinganisa ukusebenza kwe-transconductance ye-VMOSN yokuphucula i-channel ye-MOSFET, ungasebenzisa i-red test lead ukudibanisa umthombo we-S kunye novavanyo olumnyama olukhokelela kwi-drain D. Oku kulingana nokongeza i-voltage ebuyela umva phakathi komthombo kunye ne-drain. Ngeli xesha, isango livulekile isiphaluka, kwaye ixabiso lokumelana netyhubhu lizinzile kakhulu. Khetha uluhlu lwe-ohm lwe-multimeter ukuya kuluhlu oluphezulu lokumelana ne-R × 10kΩ. Ngeli xesha, i-voltage kwimitha iphezulu. Xa uchukumisa igridi G ngesandla sakho, uya kufumanisa ukuba ixabiso lokumelana netyhubhu litshintsha kakhulu. Inguqu enkulu, iphezulu ixabiso le-transconductance ye-tube; ukuba i-transconductance ye-tube phantsi kovavanyo incinci kakhulu, sebenzisa le ndlela yokulinganisa Xa , ukuchasana kwe-reverse kutshintsha kancinci.
Izilumkiso zokusebenzisa i-MOSFET
I-1) Ukuze usebenzise i-MOSFET ngokukhuselekileyo, amaxabiso alinganiselweyo eeparamitha ezinje ngombane ochithiweyo wetyhubhu, owona mbane uphezulu we-drain-source voltage, ubuninzi bombane womthombo wesango, kunye nowona msinga uphezulu awunakugqithwa kuyilo lwesekethe.
2) Xa kusetyenziswa iindidi ngeendidi zee-MOSFET, kufuneka ziqhagamshelwe kwisekethe ngokungqongqo ngokungqinelana ne-bias efunekayo, kwaye i-polarity ye-MOSFET bias kufuneka ijongwe. Ngokomzekelo, kukho i-PN junction phakathi komthombo wesango kunye ne-drain ye-MOSFET ye-junction, kwaye isango lombhobho we-N-channel alikwazi ukuchasana ngokufanelekileyo; isango lombhobho we-P-channel alikwazi ukuxhatshazwa kakubi, njl.
3) Ngenxa yokuba i-impedance ye-MOSFET iphezulu kakhulu, izikhonkwane kufuneka zibe zifutshane-zijikelezwe ngexesha lokuthutha kunye nokugcinwa, kwaye kufuneka zipakishwe ngesikhuselo sesinyithi ukuthintela ukunyanzeliswa kwangaphandle kokuqhekeka kwesango. Ngokukodwa, nceda uqaphele ukuba i-MOSFET ayinakubekwa kwibhokisi yeplastiki. Kungcono ukuyigcina kwibhokisi yentsimbi. Kwangaxeshanye, nikela ingqalelo ekugcineni umbhobho-ubungqina bokufuma.
4) Ukuze kuthintelwe ukuqhekeka kwesango le-MOSFET, zonke izixhobo zovavanyo, iibhentshi zokusebenza, ii-ayini zokutywina, kunye neesekethe ngokwazo mazibekwe kakuhle; xa uthengisa izikhonkwane, solder umthombo kuqala; ngaphambi kokuxhuma kwisekethe, ityhubhu Zonke iziphelo zokukhokela kufuneka zibe zifutshane-zijikeleze omnye komnye, kwaye izinto ezimfutshane zokujikeleza kufuneka zisuswe emva kokuba i-welding igqityiwe; xa ususa ityhubhu kwi-rack yecandelo, iindlela ezifanelekileyo kufuneka zisetyenziswe ukuze kuqinisekiswe ukuba umzimba womntu usekelwe, njengokusebenzisa indandatho; kunjalo, ukuba advanced A ngegesi-heated soldering iron ilungele ngakumbi ukuwelda MOSFETs kwaye iqinisekisa ukhuseleko; ityhubhu akufanele ifakwe okanye ikhutshwe kwisekethe ngaphambi kokuba umbane ucinywe. La manyathelo okhuseleko angasentla kufuneka athathelwe ingqalelo xa kusetyenziswa iMOSFET.
5) Xa ufaka i-MOSFET, qaphela indawo yokufakela kwaye uzame ukuphepha ukusondela kwindawo yokufudumala; ukwenzela ukuthintela ukungcangcazela kwezixhobo zombhobho, kuyimfuneko ukuqinisa igobolondo yombhobho; xa i-pin lead lead igobile, kufuneka ibe yi-5 mm enkulu kunobungakanani beengcambu ukuze kuqinisekiswe ukuba kuphephe ukugoba izikhonkwane kwaye kubangele ukuvuza komoya.
Kumandla e-MOSFETs, iimeko ezifanelekileyo zokulahla ubushushu ziyafuneka. Ngenxa yokuba ii-MOSFET zamandla zisetyenziswa phantsi kweemeko zomthwalo ophezulu, iisinki zokufudumala ezaneleyo kufuneka ziyilwe ukuze kuqinisekiswe ukuba ubushushu bemeko abudluli ixabiso elilinganisiweyo ukwenzela ukuba isixhobo sisebenze ngokuzinzileyo nangokuthembekileyo ixesha elide.
Ngamafutshane, ukuqinisekisa ukusetyenziswa ngokukhuselekileyo kwee-MOSFETs, zininzi izinto ekufuneka ziqwalaselwe, kwaye kukho amanyathelo ahlukeneyo okhuseleko ekufuneka athathwe. Uninzi lwabasebenzi abaqeqeshiweyo kunye nobugcisa, ngakumbi uninzi lwabantu abathanda i-elektroniki, kufuneka baqhubeke ngokusekwe kwimeko yabo yokwenyani kwaye bathathe iindlela eziSebenzayo zokusebenzisa ii-MOSFETs ngokukhuselekileyo nangempumelelo.
Ixesha lokuposa: Apr-15-2024
