Ukuqonda imigaqo yokusebenza ye-MOSFETs (i-Metal-Oxide-Semiconductor Field-Effect Transistors) kubalulekile ekusebenziseni ngokufanelekileyo la macandelo e-elektroniki asebenza ngokufanelekileyo. Ii-MOSFET zizinto eziyimfuneko kwizixhobo zombane, kwaye ukuziqonda kubalulekile kubavelisi.
Enyanisweni, kukho abavelisi abanokuthi bangayixabisi ngokupheleleyo imisebenzi ethile yee-MOSFETs ngexesha lokusebenza kwabo. Nangona kunjalo, ngokubamba imigaqo yokusebenza ye-MOSFET kwizixhobo zombane kunye neendima zazo ezihambelanayo, umntu unokukhetha ngobuchule eyona MOSFET ifanelekileyo, ethathela ingqalelo iimpawu zayo ezizodwa kunye neempawu ezithile zemveliso. Le ndlela iphakamisa ukusebenza kwemveliso, iqinisa ukukhuphisana kwayo kwimarike.
WINSOK SOT-23-3 iphakheji MOSFET
Imigaqo yokuSebenza ye-MOSFET
Xa amandla ombane omthombo wesango (i-VGS) ye-MOSFET inguziro, kwanaxa kusetyenziswa i-drain-source voltage (VDS), kusoloko kukho udibaniso lwe-PN olujikela umva, olukhokelela ekubeni kungabikho mjelo wokuqhuba (kwaye akukho msinga) phakathi umsele kunye nomthombo we-MOSFET. Kule meko, i-drain current (ID) ye-MOSFET ngu-zero. Ukusebenzisa i-voltage efanelekileyo phakathi kwesango kunye nomthombo (VGS> 0) kudala indawo yombane kwi-SiO2 insulating layer phakathi kwesango le-MOSFET kunye ne-silicon substrate, eqondiswe ukusuka kwisango ukuya kwi-P-type silicon substrate. Ngenxa yokuba i-oxide layer ikhusela, i-voltage esetyenziswa kwisango, i-VGS, ayikwazi ukuvelisa okwangoku kwi-MOSFET. Endaweni yoko, yenza i-capacitor ngaphesheya komgangatho we-oxide.
Njengoko i-VGS ikhula ngokuthe ngcembe, i-capacitor ihlawulisa, idala indawo yombane. Ukutsalwa ngamandla ombane afanelekileyo esangweni, ii-electron ezininzi ziqokelelana kwelinye icala le-capacitor, zenza umjelo wokuqhuba wohlobo lwe-N ukusuka kumbhobho ukuya kumthombo kwi-MOSFET. Xa i-VGS idlula i-voltage ye-VT (ngokuqhelekileyo ijikeleze i-2V), i-N-channel ye-MOSFET iqhuba, iqalisa ukuhamba kwe-ID yangoku. Umbane womthombo wesango apho umjelo uqala ukwenza khona ubizwa ngokuba yi-voltage threshold voltage VT. Ngokulawula ubukhulu be-VGS, kwaye ngenxa yoko indawo yombane, ubungakanani be-ID yangoku ye-drain kwi-MOSFET inokuguqulwa.
WINSOK DFN5x6-8 iphakheji MOSFET
Usetyenziso lwe-MOSFET
I-MOSFET idume ngeempawu zayo ezibalaseleyo zokutshintsha, nto leyo ekhokelela kwisicelo sayo esibanzi kwiisekethe ezifuna utshintsho lwe-elektroniki, olufana nombane wemowudi yokutshintsha. Kwizicelo ze-voltage ephantsi kusetyenziswa umbane we-5V, ukusetyenziswa kwezakhiwo zemveli kubangela ukuhla kwamandla ombane kwi-base-emitter ye-bipolar junction transistor (malunga ne-0.7V), ishiya kuphela i-4.3V yombane wokugqibela osetyenziswe kwisango le-bipolar junction transistor. iMOSFET. Kwiimeko ezinjalo, ukukhetha i-MOSFET ngesango lombane lesango elingu-4.5V kwazisa imingcipheko ethile. Lo mceli mngeni ukwabonakala kwizicelo ezibandakanya i-3V okanye ezinye izinikezelo zamandla ombane ophantsi.
Ixesha lokuposa: Oct-27-2023
