Izixhobo ze-semiconductor zamandla zisetyenziswa ngokubanzi kushishino, ukusetyenziswa, umkhosi kunye nezinye iindawo, kwaye zineendawo eziphezulu zobuchule. Makhe sijonge kumfanekiso opheleleyo wezixhobo zamandla ukusuka kumfanekiso:
Izixhobo ze-semiconductor zamandla zinokuhlulwa zibe luhlobo olupheleleyo, uhlobo olulawulwayo lwesiqingatha kunye nohlobo olungalawulekiyo ngokwenqanaba lolawulo lweempawu zesekethe. Okanye ngokweempawu zeempawu zesekethe yokuqhuba, inokwahlulwa ibe luhlobo oluqhutywa ngumbane, uhlobo oluqhutywa ngoku, njl.
| Ukuhlelwa | uhlobo | Izixhobo ezithile zesemiconductor yamandla |
| Ukulawulwa kwemiqondiso yombane | Uhlobo olulawulwa kancinci | SCR |
| Ulawulo olupheleleyo | GTO, GTR, MOSFET, IGBT | |
| Ayilawuleki | I-Diode yamandla | |
| Iimpawu zomqondiso wokuqhuba | Uhlobo oluqhutywa ngumbane | IGBT, MOSFET, SITH |
| Uhlobo lwangoku oluqhutywayo | SCR, GTO, GTR | |
| Umgangatho wophawu olusebenzayo | Uhlobo lwe-Pulse trigger | SCR, GTO |
| Uhlobo lolawulo lwe-elektroniki | GTR,MOSFET,IGBT | |
| Iimeko apho ii-electron eziphethe ngoku zithatha inxaxheba | isixhobo se-bipolar | Amandla eDiode, SCR, GTO, GTR,BSIT,BJT |
| Isixhobo se-unipolar | MOSFET,SIT | |
| Isixhobo esihlanganisiweyo | I-MCT, IGBT, SITH kunye ne-IGCT |
Izixhobo ezahlukeneyo ze-semiconductor zamandla zineempawu ezahlukeneyo ezifana nombane, umthamo wangoku, amandla okuthintela, kunye nobukhulu. Ekusetyenzisweni okwenyani, izixhobo ezifanelekileyo kufuneka zikhethwe ngokwemimandla eyahlukeneyo kunye neemfuno.
Umzi-mveliso we-semiconductor uye wadlula kwizizukulwana ezithathu zokutshintsha kwezinto ukususela ekuzalweni kwayo. Ukuza kuthi ga ngoku, izinto zokuqala ze-semiconductor ezimelwe nguSi zisasetyenziswa kakhulu kwintsimi yezixhobo ze-semiconductor yamandla.
| Izinto zeSemiconductor | Ibhendi (eV) | Indawo yokunyibilika(K) | isicelo esingundoqo | |
| Izinto ze-semiconductor zesizukulwana sokuqala | Ge | 1.1 | 1221 | I-voltage ephantsi, i-frequency ephantsi, ii-transistors zamandla aphakathi, ii-photodetectors |
| Izinto ze-semiconductor zesizukulwana se-2 | Si | 0.7 | 1687 | |
| Izinto ze-semiconductor zesizukulwana se-3 | IiGaAs | 1.4 | 1511 | I-microwave, izixhobo zamaza ezimilimitha, izixhobo ezikhupha ukukhanya |
| SiC | 3.05 | 2826 | 1. Ubushushu obuphezulu, i-high-frequency, izixhobo ezinokumelana nemitha ephezulu yamandla 2. I-Blue, ibakala, i-violet light-emitting diodes, i-lasemiconductor lasers | |
| GaN | 3.4 | 1973 | ||
| AIN | 6.2 | 2470 | ||
| C | 5.5 | ＞3800 | ||
| ZnO | 3.37 | 2248 | ||
Shwankathela iimpawu zezixhobo zamandla ezilawulwa kancinci kunye nezilawulwa ngokupheleleyo:
| Uhlobo lwesixhobo | SCR | GTR | I-MOSFET | IGBT |
| Uhlobo lolawulo | I-Pulse trigger | Ulawulo lwangoku | ulawulo lombane | iziko lefilimu |
| umgca wokuzivala | Ukuvalwa kotshintsho | isixhobo sokuzivala | isixhobo sokuzivala | isixhobo sokuzivala |
| ukusebenza rhoqo | ＜1khz | ＜30khz | 20khz-Mhz | ＜40khz |
| Amandla okuqhuba | encinci | enkulu | encinci | encinci |
| ukutshintsha ilahleko | enkulu | enkulu | enkulu | enkulu |
| ilahleko conduction | encinci | encinci | enkulu | encinci |
| I-voltage kunye nenqanaba langoku | 最大 | enkulu | ubuncinane | Kaninzi |
| Usetyenziso oluqhelekileyo | Ukufudumeza okuphakathi kwamaza omoya | UPS isiguquli rhoqo | ukutshintsha unikezelo lwamandla | UPS isiguquli rhoqo |
| ixabiso | esezantsi | ngaphantsi | esiphakathini | Eyona ibiza kakhulu |
| isiphumo sokumodulation conductance | babe | babe | akukho nanye | babe |
Yazi iiMOSFETs
I-MOSFET ine-impedance ephezulu yokufaka, ingxolo ephantsi, kunye nokuzinza okuhle kwe-thermal; inenkqubo yokuvelisa elula kunye nemitha enamandla, ngoko idla ngokusetyenziswa kwiisekethe ze-amplifier okanye iisekethe zokutshintsha;
(1) Iiparamitha zokukhetha eziphambili: i-drain-source voltage VDS (ukumelana ne-voltage), i-ID yokuvuza ngokuqhubekayo, i-RDS (on) i-resistance, i-Ciss input capacitance (i-junction capacitance), umgangatho we-FOM=Ron * Qg, njl.
(2) Ngokweenkqubo ezahlukeneyo, yahlulahlulwe yaba yi-TrenchMOS: umsele we-MOSFET, ubukhulu becala kwindawo yombane ophantsi ngaphakathi kwe-100V; SGT (Split Gate) I-MOSFET: isango lokucanda iMOSFET, ubukhulu becala kwindawo yamandla ombane aphakathi naphantsi ngaphakathi kwe-200V; I-SJ MOSFET: i-super junction MOSFET, ikakhulu kwi-High voltage field 600-800V;
Kumandla okutshintsha, njengesekethe evulekileyo, i-drain ixhunyiwe kumthwalo ochanekileyo, obizwa ngokuba yi-open-drain. Kwisekethe evulekileyo, kungakhathaliseki ukuba i-voltage iphezulu kangakanani umthwalo odibeneyo, umbane wangoku unokuvulwa kwaye ucinywe. Sisixhobo esifanelekileyo sokutshintsha i-analog. Lo ngumgaqo we-MOSFET njengesixhobo sokutshintsha.
Ngokwezabelo zentengiso, ii-MOSFETs phantse zonke zigxile kwizandla zabavelisi abakhulu bamazwe ngamazwe. Phakathi kwabo, u-Infineon wafumana i-IR (iNkampani ye-American International Rectifier Company) kwi-2015 kwaye yaba yinkokeli yoshishino. I-ON Semiconductor iphinde yagqiba ukufumana i-Fairchild Semiconductor ngoSeptemba 2016. , isabelo semarike sagxuma kwindawo yesibini, kwaye emva koko i-rankings yokuthengisa yayiyiRenesas, Toshiba, IWC, ST, Vishay, Anshi, Magna, njl.;
Iimpawu eziphambili ze-MOSFET zahlulwe zaba ziichungechunge ezininzi: eMelika, eJapan naseKorea.
Uchungechunge lwaseMelika: i-Infineon, i-IR, i-Fairchild, i-ON Semiconductor, i-ST, i-TI, i-PI, i-AOS, njl.;
IsiJapan: iToshiba, iRenesas, iROHM, njl.;
Uchungechunge lwaseKorea: Magna, KEC, AUK, Morina Hiroshi, Shinan, KIA
Iindidi zephakheji ye-MOSFET
Ngokwendlela efakwe ngayo kwibhodi yePCB, kukho iindidi ezimbini eziphambili zeepakethe zeMOSFET: iplagi-in (Ngomngxuma) kunye nentaba yomphezulu (iNtaba eSurface). .
Uhlobo lwe-plug-in luthetha ukuba izikhonkwane ze-MOSFET zidlula kwimingxuma enyukayo yebhodi ye-PCB kwaye idityaniswe kwibhodi ye-PCB. Iiphakheji eziqhelekileyo ze-plug-in ziquka: iphakheji ye-double in-line (DIP), iphakheji ye-transistor outline (TO), kunye ne-pin grid array package (PGA).
Ukupakishwa kweplagi
Ukunyuswa komphezulu kulapho izikhonkwane ze-MOSFET kunye neflange yokuchitha ubushushu zidityaniswa kwipads kumphezulu webhodi yePCB. Iiphakheji eziqhelekileyo zokunyuka komphezulu zibandakanya: i-transistor outline (D-PAK), i-transistor encinci ye-outline (SOT), iphakheji encinci yolwandlalo (SOP), iphakheji ye-quad flat (QFP), i-plastic leaded chip carrier (PLCC), njl.
iphakheji yentaba
Ngophuhliso lwetekhnoloji, iibhodi zePCB ezinjengeebhodi zemotherboard kunye namakhadi emizobo ngoku zisebenzisa ngaphantsi nangaphantsi ngokuthe ngqo kwiplagi yokupakisha, kunye nokupakishwa komphezulu ongaphezulu kuyasetyenziswa.
1. Ipakethe ye-Dual in-line (DIP)
Iphakheji ye-DIP inemiqolo emibini yezikhonkwane kwaye kufuneka ifakwe kwi-chip socket kunye nesakhiwo se-DIP. Indlela yokuphuma kwayo yi-SDIP (Shrink DIP), eyi-shrink double-in-line package. Uxinaniso lwephini luphindwe ngama-6 aphezulu kunolo lwe-DIP.
Iifom zesakhiwo sokupakisha ze-DIP ziquka: i-multi-layer ceramic dual-in-line DIP, i-ceramic-layer-double-in-line DIP, isakhelo esikhokelayo se-DIP (kubandakanywa uhlobo lokutywinwa lweglasi-ceramic, uhlobo lwesakhiwo seplastiki ye-encapsulation, i-ceramic low-melting glass encapsulation uhlobo) njl. Uphawu lokupakishwa kwe-DIP kukuba inokuqonda ngokulula nge-welding yeebhodi zePCB kwaye iyahambelana kakuhle nebhodi yomama.
Nangona kunjalo, ngenxa yokuba indawo yokupakisha kunye nobukhulu bukhulu kakhulu, kwaye izikhonkwane zonakaliswa lula ngexesha lokufaka iplagi kunye nenkqubo yokukhupha, ukuthembeka kukubi. Ngelo xesha, ngenxa yempembelelo yenkqubo, inani lezikhonkwane ngokuqhelekileyo alidluli i-100. Ngoko ke, kwinkqubo yokuhlanganiswa okuphezulu koshishino lwe-elektroniki, ukupakishwa kwe-DIP kuye kwahoxiswa ngokuthe ngcembe kwinqanaba lembali.
2. Ipakethe yeTransistor Outline (TO)
Iimpawu zokupakisha kwangaphambili, ezifana ne-TO-3P, TO-247, TO-92, TO-92L, TO-220, TO-220F, TO-251, njl. zonke ziyi-plug-in zokupakisha zokupakisha.
I-TO-3P/247: Yifomu yokupakisha esetyenziswa ngokuqhelekileyo kumbane ophakathi kunye neeMOSFET zangoku. Imveliso ineempawu zokumelana ne-voltage ephezulu kunye nokumelana nokuqhekeka okunamandla.
I-TO-220 / 220F: I-TO-220F yiphakheji yeplastiki epheleleyo, kwaye akukho mfuneko yokongeza i-pad insulating xa uyifaka kwi-radiator; I-TO-220 ineshiti lensimbi eliqhagamshelwe kwipini ephakathi, kwaye i-pad insulating iyadingeka xa ufaka i-radiator. Ii-MOSFET zezi ndlela zimbini zokupakisha zinenkangeleko efanayo kwaye zinokusetyenziswa ngokutshintshanayo.
UKUYA ku-251: Le mveliso epakishweyo isetyenziselwa ukunciphisa iindleko kunye nokunciphisa ubungakanani bemveliso. Isetyenziswa kakhulu kwiindawo ezinevoltheji ephakathi kunye nephezulu yangoku engaphantsi kwe-60A kunye nombane ophezulu ongaphantsi kwe-7N.
TO-92: Le phakheji isetyenziselwa kuphela i-low-voltage MOSFET (ikhoyo ngoku ingaphantsi kwe-10A, imelana nombane ongaphantsi kwe-60V) kunye ne-high-voltage 1N60/65, ukwenzela ukunciphisa iindleko.
Kwiminyaka yakutshanje, ngenxa yexabiso eliphezulu le-welding yenkqubo yokupakisha i-plug-in kunye nokusebenza okungaphantsi kokushisa ubushushu kwiimveliso zohlobo lwe-patch, imfuno kwimarike yentaba iqhubekile nokunyuka, okuye kwakhokelela ekuphuhlisweni kwe-TO ukupakisha. kwipakethe yentaba.
I-TO-252 (ekwabizwa ngokuba yi-D-PAK) kunye ne-TO-263 (D2PAK) zombini ziipakethe zokubeka umphezulu.
TO ipakethe inkangeleko yemveliso
I-TO252/D-PAK yiphakeji yetshiphu yeplastiki, edla ngokusetyenziselwa ukupakisha ii-transistors zamandla kunye ne-voltage stabilizing chips. Yenye yeepakethe zesiqhelo zangoku. I-MOSFET esebenzisa le ndlela yokupakisha inee-electrode ezintathu, isango (G), idrain (D), kunye nomthombo (S). I-drain (D) ipini inqunyulwe kwaye ayisetyenziswa. Endaweni yoko, i-heat sink ngasemva isetyenziswa njenge-drain (D), edityaniswe ngokuthe ngqo kwi-PCB. Kwelinye icala, isetyenziselwa ukuvelisa imisinga emikhulu, kwaye kwelinye icala, ikhupha ubushushu ngePCB. Ke, kukho iipads ezintathu ze-D-PAK kwi-PCB, kunye nedreyini (D) pad inkulu. Imiba yokupakishwa kwayo imi ngolu hlobo lulandelayo:
I-TO-252/D-PAK imilinganiselo yobungakanani bephakheji
TO-263 luhlobo lwe TO-220. Ikakhulu yenzelwe ukuphucula ukusebenza kakuhle kwemveliso kunye nokutshatyalaliswa kobushushu. Ixhasa umbane ophezulu kakhulu wangoku kunye nombane. Ixhaphake kakhulu kwi-medium-voltage high-current MOSFETs ngaphantsi kwe-150A nangaphezulu kwe-30V. Ukongeza kwi-D2PAK (TO-263AB), ikwabandakanya i-TO263-2, TO263-3, TO263-5, TO263-7 kunye nezinye izitayile, eziphantsi kwe-TO-263, ikakhulu ngenxa yenani elahlukileyo kunye nomgama wezikhonkwane. .
TO-263/D2PAK ubungakanani bepakethi yobungakananis
3. Pin iphakheji yoluhlu lwegridi (PGA)
Kukho izikhonkwane ezininzi zesikwere ngaphakathi nangaphandle kwe-PGA (i-Pin Grid Array Package) chip. Isikhonkwane ngasinye sesikwere sicwangciswe kumgama othile malunga netshiphu. Ngokuxhomekeke kwinani lezikhonkwane, inokuqulunqwa kwiisangqa ezi-2 ukuya kwezi-5. Ngexesha lofakelo, faka nje i-chip kwi-socket ekhethekileyo ye-PGA. Ineenzuzo zokuplaga lula kunye nokukhupha kunye nokuthembeka okuphezulu, kwaye iyakwazi ukuziqhelanisa nee-frequencies eziphezulu.
Isimbo sephakheji yePGA
Uninzi lwee-chip substrates zayo zenziwe nge-ceramic material, kwaye ezinye zisebenzisa i-resin ekhethekileyo yeplastiki njenge-substrate. Ngokwethekhinoloji, umgama weziko le-pin udla ngokuba yi-2.54mm, kwaye inani lezikhonkwane livela kwi-64 ukuya kwi-447. Uphawu lolu hlobo lokupakisha kukuba incinci indawo yokupakisha (umthamo), ukusetyenziswa kwamandla aphantsi (ukusebenza). ) inokumelana, kwaye ngokuphambanayo. Le ndlela yokupakisha yeechips yayixhaphake kakhulu ngeentsuku zokuqala, kwaye yayisetyenziselwa ukupakisha iimveliso zokusetyenziswa kwamandla aphezulu njenge-CPUs. Umzekelo, i-Intel's 80486 kunye nePentium zonke zisebenzisa le ndlela yokupakisha; ayamkelwa ngokubanzi ngabavelisi be-MOSFET.
4. Iphakheji encinci yeTransistor (SOT)
I-SOT (i-Small Out-Line Transistor) luhlobo lwesiziba sephakeji encinci ye-transistor yamandla, ingakumbi i-SOT23, SOT89, SOT143, SOT25 (okt SOT23-5), njl. SOT323, SOT363/SOT26 (okt SOT23-6) kunye nezinye iintlobo ethathwe, emncinci ngesayizi kune TO ipakethe.
Uhlobo lwephakheji ye-SOT
I-SOT23 yiphakheji ye-transistor esetyenziswa ngokuqhelekileyo enezikhonkwane ezintathu ezimile okwephiko, ezizezi: umqokeleli, u-emitter kunye nesiseko, ezidweliswe kumacala omabini kwicala elide lecandelo. Phakathi kwabo, i-emitter kunye nesiseko zisecaleni elifanayo. Ziqhelekile kwii-transistors zamandla aphantsi, ii-transistors ze-field effect kunye ne-composite transistors ezine-resistor networks. Banamandla amahle kodwa bangabikho solderability. Imbonakalo iboniswe kuMfanekiso (a) ngezantsi.
I-SOT89 inezikhonkwane ezimfutshane ezintathu ezisasazwe kwicala elinye le-transistor. Elinye icala sisinki yobushushu yesinyithi edityaniswe kwisiseko sokwandisa amandla okuphelisa ubushushu. Iqhelekile kwi-silicon yamandla aphezulu e-transistors kwaye ilungele ukusetyenziswa kwamandla aphezulu. Imbonakalo iboniswe kuMfanekiso (b) ngezantsi.
I-SOT143 inezikhonkwane ezine ezimfutshane ezimile okwephiko, eziphuma macala omabini. Isiphelo esibanzi sesikhonkwane ngumqokeleli. Olu hlobo lwephakheji luqhelekileyo kwi-high-frequency transistors, kwaye ukubonakala kwayo kuboniswe kuMzobo (c) ngezantsi.
I-SOT252 yi-transistor ephezulu yamandla enezikhonkwane ezintathu ezikhokelela kwicala elinye, kunye nephini eliphakathi lifutshane kwaye lingumqokeleli. Qhagamshela isikhonkwane esikhulu kwelinye icala, eliphepha lobhedu lokuchitha ubushushu, kwaye ukubonakala kwalo kubonisiwe kuMfanekiso (d) ngezantsi.
Uthelekiso lwenkangeleko yephakheji ye-SOT eqhelekileyo
Isiphelo sesine SOT-89 MOSFET siqhele ukusetyenziswa kwiibhodi zemotherboard. Ukucaciswa kwayo kunye nemilinganiselo imi ngolu hlobo lulandelayo:
SOT-89 imilinganiselo yobungakanani beMOSFET (iyunithi: mm)
5. Ipakethe eNcinci (SOP)
I-SOP (Ipakethe eNcinci yokuPhuma kumgca) yenye yeepakethi zokunyuka komphezulu, ezikwabizwa ngokuba yi-SOL okanye i-DFP. Izikhonkwane zitsalwa kumacala omabini epakethe kwiphiko le-seagull shape (L shape). Izixhobo zeplastiki kunye ne-ceramic. Imigangatho yokupakisha ye-SOP ibandakanya i-SOP-8, i-SOP-16, i-SOP-20, i-SOP-28, njl. Inombolo emva kwe-SOP ibonisa inani lezikhonkwane. Uninzi lweepakethe ze-MOSFET SOP zamkela iinkcukacha zeSOP-8. Ishishini lihlala liyishiyile i-"P" kwaye lifinyeze njenge-SO (I-Line Out-Line).
Ubungakanani bephakheji ye-SOP-8
I-SO-8 yaphuhliswa okokuqala yi-PHILIP Company. Ipakishwe ngeplastiki, ayinayo ipleyiti esezantsi yokuchitha ubushushu, kwaye ayinakulahla ubushushu. Ngokuqhelekileyo isetyenziselwa iiMOSFET ezinamandla aphantsi. Kamva, imilinganiselo esemgangathweni efana ne-TSOP (iPhakheji yeSishwankathelo esiNcinci esiNcinci), i-VSOP (iPhakheji yeSishwankathelo esiNcinci kakhulu), i-SSOP (i-Shrink SOP), i-TSSOP (i-Thin Shrink SOP), njl. phakathi kwabo, i-TSOP kunye ne-TSSOP ziqhele ukusetyenziswa kwi-MOSFET ukupakishwa.
I-SOP ifumene iinkcukacha eziqhele ukusetyenziswa kwii-MOSFETs
6. I-Quad Flat Package (QFP)
Umgama phakathi kwezikhonkwane ze-chip kwi-QFP (i-Plastic Quad Flat Package) iphakheji incinci kakhulu kwaye izikhonkwane zincinci kakhulu. Ngokuqhelekileyo isetyenziswa kwiisekethe ezihlanganisiweyo ezinkulu okanye ezinkulu, kwaye inani lezikhonkwane ngokuqhelekileyo lingaphezulu kwe-100. Iichips ezipakishwe kule fomu kufuneka zisebenzise iteknoloji ye-SMT yokunyusa umgangatho wokuthengisa i-chip kwi-motherboard. Le ndlela yokupakisha ineempawu ezine eziphambili: ① Ilungele iteknoloji ye-SMD yokunyusela umphezulu wokufaka iingcingo kwiibhodi zesekethe zePCB; ② Ilungele ukusetyenziswa kwe-high-frequency; ③ Kulula ukusebenza kwaye inokuthembeka okuphezulu; ④ Umlinganiselo phakathi kwendawo ye-chip kunye nendawo yokupakisha incinci. Njengendlela yokupakisha ye-PGA, le ndlela yokupakisha isonga i-chip kwi-package yeplastiki kwaye ayikwazi ukutshabalalisa ukushisa okwenziwa xa i-chip isebenza ngexesha elifanelekileyo. Ithintela ukuphuculwa komsebenzi we-MOSFET; kunye nokupakishwa kweplastiki ngokwawo kwandisa ubungakanani besixhobo, esingahambelani neemfuno zokuphuhliswa kwee-semiconductors kwicala lokukhanya, elincinci, elifutshane, kwaye lincinci. Ukongezelela, olu hlobo lwendlela yokupakisha lusekelwe kwi-chip enye, eneengxaki zemveliso ephantsi kunye neendleko eziphezulu zokupakisha. Ngoko ke, i-QFP ifaneleke ngakumbi ukusetyenziswa kwiisekethe ze-digital logic LSI ezifana ne-microprocessors / i-gate arrays, kwaye ifanelekile ukupakishwa kweemveliso zesekethe ze-analog LSI ezifana nokusetyenzwa kwesignali ye-VTR kunye nokulungiswa komsindo.
I-7, iphakheji ye-Quad ethe tyaba engenazikhokelo (QFN)
Iphakheji ye-QFN (i-Quad Flat Non-leaded package) ixhotyiswe ngoqhagamshelwano lwe-electrode kuwo onke macala amane. Ekubeni akukho zikhokelo, indawo yokunyuka incinci kune-QFP kwaye ukuphakama kungaphantsi kwe-QFP. Phakathi kwazo, i-ceramic QFN ikwabizwa ngokuba yi-LCC (i-Leadless Chip Carriers), kunye ne-QFN yeplastiki enexabiso eliphantsi usebenzisa i-glass epoxy resin eprintiweyo isiseko se-substrate material ibizwa ngokuba yi-plastiki LCC, i-PCLC, i-P-LCC, njl. itekhnoloji enobungakanani bepadi encinci, umthamo omncinci, kunye neplastiki njengezinto zokutywina. I-QFN isetyenziselwa ikakhulu ukupakishwa kweesekethe ezihlanganisiweyo, kwaye i-MOSFET ayisayi kusetyenziswa. Nangona kunjalo, ngenxa yokuba i-Intel icebise umqhubi odibeneyo kunye nesisombululo se-MOSFET, yazisa i-DrMOS kwiphakheji ye-QFN-56 ("56" ibhekisela kwizikhonkwane zoqhagamshelwano ezingama-56 ngasemva kwetshiphu).
Kufuneka kuqatshelwe ukuba iphakheji ye-QFN inesimo esifanayo sokukhokela kwangaphandle njenge-ultra-thin encinci ye-outline package (TSSOP), kodwa ubukhulu bayo buyi-62% encinci kune-TSSOP. Ngokutsho kwedatha yemodeli ye-QFN, ukusebenza kwayo kwe-thermal yi-55% ephezulu kune-TSSOP yokupakisha, kunye nokusebenza kombane (i-inductance kunye ne-capacitance) yi-60% kunye ne-30% ephezulu kune-TSSOP yokupakisha ngokulandelanayo. Eyona nto ingalunganga kukuba kunzima ukuyilungisa.
I-DrMOS kwiphakheji ye-QFN-56
Unikezelo lwamandla ombane olucacileyo lweDC/DC olusezantsi olusezantsi alukwazi ukukhawulelana neemfuno zoxinaniso lwamandla aphezulu, kwaye abanako ukuyisombulula ingxaki yeziphumo zeparasitiki kwifrikhwensi yokutshintsha okuphezulu. Ngokusungulwa kunye nenkqubela phambili yetekhnoloji, kuye kwaba yinyani ukudibanisa abaqhubi kunye nee-MOSFETs ukwakha iimodyuli ze-chip ezininzi. Le ndlela yokudibanisa inokonga indawo enkulu kwaye yandise ubuninzi bokusetyenziswa kwamandla. Ngokwenziwa kwabaqhubi kunye nee-MOSFETs, ibe yinyani. Ukusebenza kwamandla kunye nomgangatho ophezulu we-DC yangoku, lo ngumqhubi odibeneyo we-DrMOS IC.
Renesas 2nd isizukulwana DrMOS
Iphakheji ye-QFN-56 engakhokelelanga yenza i-DrMOS i-thermal impedance iphantsi kakhulu; kunye nokudibanisa ucingo lwangaphakathi kunye noyilo lwekliphu yobhedu, i-PCB yangaphandle i-wiring ingancitshiswa, ngaloo ndlela inciphisa i-inductance kunye nokumelana. Ukongeza, inkqubo ye-silicon ye-MOSFET enzulu esetyenzisiweyo inokunciphisa kakhulu ukuqhuba, ukutshintsha kunye nelahleko yentlawulo yesango; iyahambelana neentlobo zabalawuli, inokufikelela kwiindlela zokusebenza ezahlukeneyo, kwaye ixhasa imo yokuguqula isigaba esisebenzayo i-APS (I-Auto Phase Switching). Ukongeza kwipakethe ye-QFN, ukupakishwa kwe-flat akukho-lead (DFN) kwakhona yinkqubo entsha yokupakisha ye-elektroniki esetyenziswe ngokubanzi kumacandelo ahlukeneyo e-ON Semiconductor. Xa kuthelekiswa ne-QFN, i-DFN inee-electrodes ezimbalwa ezikhokelayo kumacala omabini.
8, Isithwali sePlastiki esiKhokela kwiChip (PLCC)
I-PLCC (i-Plastic Quad Flat Package) inokwakheka kwesikwele kwaye incinci kakhulu kunepakethe ye-DIP. Inezikhonkwane ezingama-32 ezinezikhonkwane macala onke. Izikhonkwane zikhokelwa kumacala amane epakethe kwi-T-shape. Yimveliso yeplastiki. Umgama weziko le-pin ngu-1.27mm, kwaye inani lezikhonkwane livela kwi-18 ukuya kwi-84. Izikhonkwane ezinobumba obungu-J azikhubeki lula kwaye zilula ukusebenza kune-QFP, kodwa ukuhlolwa kwembonakalo emva kwe-welding kunzima kakhulu. Ukupakishwa kwe-PLCC kukulungele ukufakela iingcingo kwi-PCB kusetyenziswa itekhnoloji yokufaka umphezulu we-SMT. Ineenzuzo zobukhulu obuncinci kunye nokuthembeka okuphezulu. Ukupakishwa kwe-PLCC kuqhelekile kwaye kusetyenziswa kwi-logic LSI, i-DLD (okanye isixhobo sokucwangcisa inkqubo) kunye nezinye iisekethe. Le fomu yokupakisha isoloko isetyenziswa kwi-BIOS yebhodi yomama, kodwa okwangoku ayixhaphakanga kwii-MOSFETs.
Ukuhlanganiswa kunye nokuphuculwa kwamashishini aqhelekileyo
Ngenxa yendlela yophuhliso lwamandla ombane aphantsi kunye nokuphezulu kwangoku kwii-CPU, ii-MOSFETs kufuneka zibe nemveliso enkulu yangoku, ukuchasana nokumelana, ukuvelisa ubushushu obuphantsi, ukutshatyalaliswa kobushushu okukhawulezayo, kunye nobungakanani obuncinci. Ukongeza ekuphuculeni iteknoloji yokuvelisa i-chip kunye neenkqubo, abavelisi be-MOSFET bayaqhubeka nokuphucula iteknoloji yokupakisha. Ngesiseko sokuhambelana neenkcukacha zembonakalo eqhelekileyo, bacebisa iimilo zokupakisha ezintsha kunye nokubhalisa amagama ophawu lwentengiso kwiipakethe ezintsha abazenzayo.
1、REENESAS WPAK, LFPAK kunye neephakheji zeLFPAK-I
I-WPAK yiphakheji yobushushu obuphezulu obuphuhliswe nguRenesas. Ngokuxelisa i-package ye-D-PAK, i-chip ye-heat sink idityaniswe kwi-motherboard, kwaye ubushushu buyachithwa kwi-motherboard, ukuze iphakheji encinci ye-WPAK ikwazi ukufikelela kwimveliso yangoku ye-D-PAK. Iiphakheji ze-WPAK-D2 ezimbini eziphezulu / eziphantsi ze-MOSFET zokunciphisa i-inductance yocingo.
Ubungakanani bepakethe yeRenesas WPAK
I-LFPAK kunye ne-LFPAK-I zezinye iiphakheji ezincinci zefom-factor eziphuhliswe nguRenesas ezihambelana ne-SO-8. I-LFPAK iyafana ne-D-PAK, kodwa incinci kune-D-PAK. I-LFPAK-i ibeka i-heat sink phezulu ukuze ikhuphe ubushushu kwi-heat sink.
Iiphakheji ze-Renesas LFPAK kunye ne-LFPAK-I
2. I-Vishay Power-PAK kunye ne-Polar-PAK yokupakisha
I-Power-PAK ligama lephakheji ye-MOSFET ebhaliswe yi-Vishay Corporation. I-Power-PAK ibandakanya iinkcukacha ezimbini: I-Power-PAK1212-8 kunye ne-Power-PAK SO-8.
Vishay Power-PAK1212-8 iphakheji
Vishay Power-PAK SO-8 iphakheji
I-Polar PAK yipakethe encinci enecala eliphindwe kabini lokulahla ubushushu kwaye yenye yetekhnoloji ye-Vishay yokupakisha. I-Polar PAK iyafana nephakheji eqhelekileyo ye-so-8. Ineendawo zokulahla kumacala omabini aphezulu nasezantsi epakethe. Akulula ukuqokelela ubushushu ngaphakathi kwepakethe kwaye kunokunyusa ubuninzi bangoku bomsebenzi wangoku ukuya kabini kwi-SO-8. Okwangoku, uVishay unelayisensi yeTekhnoloji yePolar PAK kwi-STMicroelectronics.
Vishay Polar PAK iphakheji
3. Onsemi SO-8 kunye WDFN8 flat lead packages
I-ON Semiconductor iye yavelisa iindidi ezimbini ze-MOSFET ezikhokelayo, phakathi kwazo i-SO-8 ehambelana ne-flat-lead isetyenziswa ngamabhodi amaninzi. KWI-Semiconductor esanda kuqaliswa i-NVMx kunye ne-NVTx yamandla e-MOSFETs isebenzisa i-compact DFN5 (SO-8FL) kunye neephakheji ze-WDFN8 ukunciphisa ilahleko yokuqhuba. Ikwabonisa i-QG ephantsi kunye namandla okunciphisa ilahleko yabaqhubi.
KWI-Semiconductor SO-8 Flat Lead Package
KWI-Semiconductor iphakheji ye-WDFN8
4. I-NXP LFPAK kunye ne-QLPAK yokupakisha
I-NXP (eyayiyiPhilps) iphucule iteknoloji yokupakisha ye-SO-8 kwi-LFPAK kunye ne-QLPAK. Phakathi kwabo, i-LFPAK ithathwa njengeyona nto ithembekileyo iphakheji ye-SO-8 emhlabeni; ngelixa i-QLPAK ineempawu zobukhulu obuncinci kunye nokusebenza kakuhle kokutshatyalaliswa kobushushu. Xa kuthelekiswa ne-SO-8 eqhelekileyo, i-QLPAK ithatha indawo yebhodi ye-PCB ye-6 * 5mm kwaye inokumelana ne-thermal ye-1.5k / W.
NXP LFPAK iphakheji
NXP QLPAK ukupakishwa
4. Iphakheji ye-ST Semiconductor PowerSO-8
I-STMicroelectronics 'iteknoloji yokupakisha i-chip ye-MOSFET yamandla iquka i-SO-8, i-PowerSO-8, i-PowerFLAT, i-DirectFET, i-PolarPAK, njl. Phakathi kwabo, i-Power SO-8 yinguqulelo ephuculweyo ye-SO-8. Ukongeza, kukho i-PowerSO-10, i-PowerSO-20, i-TO-220FP, i-H2PAK-2 kunye nezinye iipakethi.
Iphakheji ye-STMicroelectronics Power SO-8
5. Iphakheji yeFairchild Semiconductor Power 56
I-Power 56 ligama elikhethekileyo likaFarichild, kwaye igama layo elisemthethweni yi-DFN5×6. Indawo yayo yokupakisha ithelekiseka naleyo ye-TSOP-8 esetyenziswa ngokuqhelekileyo, kwaye iphakheji ebhityileyo igcina ukuphakama kwemvume yecandelo, kunye noyilo lwe-Thermal-Pad ezantsi lunciphisa ukuxhathisa ukushisa. Ke ngoko, abaninzi abavelisi bezixhobo zamandla basebenzise i-DFN5 × 6.
Fairchild Power 56 iphakheji
6. Iphakheji ye-FET ye-International Rectifier (IR)
I-FET ethe ngqo ibonelela ngokupholisa okuphezulu okusebenzayo kwi-SO-8 okanye indawo encinci kwaye ifanelekile kwi-AC-DC kunye ne-DC-DC yokuguqula usetyenziso lwamandla kwiikhompyuter, iilaptops, unxibelelwano kunye nezixhobo zombane zabathengi. Ulwakhiwo lwesinyithi lwe-DirectFET lubonelela ngokuchithwa kobushushu kumacala amabini, luphinda-phinda kabini amandla akhoyo okuphatha amatyeli aphezulu e-DC-DC yoguqulo lwebhanti xa kuthelekiswa neepakethe zeplastiki eziqhelekileyo. Iphakheji ye-FET eNgqo luhlobo olufakwe umva, kunye ne-drain (D) ye-heat sink ejonge phezulu kwaye igqunywe ngeqokobhe lesinyithi, apho ubushushu bukhutshwa khona. Ukupakishwa kwe-FET okuthe ngqo kuphucula kakhulu ukutshatyalaliswa kobushushu kwaye kuthatha indawo encinci kunye nokulahla ubushushu okulungileyo.
Shwankathela
Kwixesha elizayo, njengoko umzi-mveliso we-elektroniki uqhubeka ukhula kwicala le-ultra-thin, miniaturization, i-voltage ephantsi, kunye nephezulu yangoku, inkangeleko kunye nesakhiwo sangaphakathi sokupakisha se-MOSFET siya kutshintsha ukuze silungelelanise ngcono iimfuno zophuhliso lwemveliso. ishishini. Ukongeza, ukuze kuthotywe umda wokukhetha abavelisi be-elektroniki, umkhwa wophuhliso lwe-MOSFET kwicala le-modularization kunye nokupakishwa kwenqanaba lenkqubo kuya kucaca ngakumbi, kwaye iimveliso ziya kukhula ngendlela elungelelanisiweyo ukusuka kwimilinganiselo emininzi efana nokusebenza kunye neendleko. . Iphakheji yenye yezinto ezibalulekileyo zokubhekisela ekukhethweni kwe-MOSFET. Iimveliso ezahlukeneyo zombane zineemfuno ezahlukeneyo zombane, kwaye iimeko zofakelo ezahlukeneyo zikwafuna ukulinganisa ubungakanani bemilinganiselo ukuhlangabezana. Ekukhethweni kwangempela, isigqibo kufuneka senziwe ngokweemfuno zangempela phantsi komgaqo jikelele. Ezinye iisistim zombane zikhawulelwe ngobukhulu bePCB kunye nobude bangaphakathi. Umzekelo, unikezelo lwamandla emodyuli yeenkqubo zonxibelelwano ngokuqhelekileyo zisebenzisa i-DFN5 * 6 kunye ne-DFN3 * 3 iipakethi ngenxa yemingcele yokuphakama; kwezinye izixhobo zombane ze-ACDC, uyilo olubhityileyo kakhulu okanye ngenxa yonyino lweqokobhe lufanelekile ukudibanisa ii-TO220 ezipakishweyo zamandla eMOSFET. Ngeli xesha, izikhonkwane zinokufakwa ngokuthe ngqo kwingcambu, engafanelekanga kwiimveliso ezipakishweyo ze-TO247; Uyilo oluthile olubhityileyo kakhulu lufuna ukuba izikhonkwane zesixhobo zigotywe kwaye zibekwe mcaba, nto leyo eya kwandisa ukuntsonkotha kokhetho lwe-MOSFET.
Indlela yokukhetha i-MOSFET
Enye injineli yakha yandixelela ukuba ayizange ijonge kwiphepha lokuqala le-data sheet ye-MOSFET kuba ulwazi “lobuchule” luvela kuphela kwiphepha lesibini nangaphaya. Phantse lonke iphepha kwiphepha ledatha le-MOSFET liqulethe ulwazi oluxabisekileyo lwabayili. Kodwa akusoloko kucaca ukuba itolikwa njani idatha enikwe ngabavelisi.
Eli nqaku lichaza ezinye zeenkcukacha eziphambili zee-MOSFETs, ukuba zichazwe njani kuluhlu lwedatha, kunye nomfanekiso ocacileyo ekufuneka uwuqonde. Njengoninzi lwezixhobo zombane, ii-MOSFET zichatshazelwa bubushushu bokusebenza. Ngoko ke kubalulekile ukuqonda iimeko zovavanyo apho izikhombisi ezikhankanyiweyo zisetyenziswa. Kukwabalulekile ukuqonda ukuba ngaba izalathisi ozibonayo "kwiNtshayelelo yeMveliso" ngamaxabiso "aphezulu" okanye "aqhelekileyo", kuba amanye amaxwebhu edatha awayenzi icace.
Ibakala lombane
Olona phawu luphambili olumisela i-MOSFET yi-drain-source voltage VDS, okanye "i-drain-source breakdown voltage", elona voltheji iphezulu iMOSFET inokumelana nayo ngaphandle komonakalo xa isango lijikeleziswa kancinci ukuya kwindawo kunye nomsinga wamanzi. yi 250μA. . I-VDS ikwabizwa ngokuba "yi-voltage ephezulu kwi-25 ° C", kodwa kubalulekile ukukhumbula ukuba lo mbane opheleleyo uxhomekeke kubushushu, kwaye ngokuqhelekileyo kukho "i-VDS coefficient yokushisa" kwiphepha ledatha. Kuya kufuneka uqonde ukuba ubuninzi be-VDS yi-voltage ye-DC kunye nazo naziphi na ii-voltage spikes kunye nama-ripples anokuthi abekhona kwisekethe. Umzekelo, ukuba usebenzisa isixhobo se-30V kunikezelo lwamandla lwe-30V nge-100mV, i-5ns spike, i-voltage iya kudlula umda opheleleyo wesixhobo kwaye isixhobo sinokungena kwimodi ye-avalanche. Kule meko, ukuthembeka kwe-MOSFET akunakuqinisekiswa. Kwiqondo lokushisa eliphezulu, i-coefficient yeqondo lokushisa inokutshintsha kakhulu i-voltage yokuphuka. Ngokomzekelo, ezinye ii-MOSFET ze-N-channel ezine-voltage rating ye-600V zine-coefficient yokushisa efanelekileyo. Njengoko besondela kubushushu obuphezulu besiphambuka, iqondo lobushushu libangela ukuba ezi MOSFET ziziphathe njenge-650V MOSFETs. Uninzi lwemithetho yoyilo lwabasebenzisi be-MOSFET ifuna ukuthotywa kwe-10% ukuya kuma-20%. Kwezinye iiplani, ngokuqwalasela ukuba i-voltage ye-breakdown yangempela yi-5% ukuya kwi-10% ephezulu kunexabiso elilinganisiweyo kwi-25 ° C, i-margin yoyilo oluluncedo oluhambelanayo luya kongezwa kuyilo lwangempela, oluyinzuzo kakhulu kuyilo. Okubaluleke ngokufanayo kukhetho oluchanekileyo lwee-MOSFET kukuqonda indima yombane wesango lomthombo weVGS ngexesha lenkqubo yokuqhuba. Lo mbane wombane uqinisekisa ukuqhutywa ngokupheleleyo kweMOSFET phantsi kowona mgangatho unikiweyo we-RDS(on) uphezulu. Kungenxa yoko le nto i-on-resistance ihlala ihambelana nenqanaba le-VGS, kwaye kuphela kule voltage apho isixhobo sinokuvulwa. Isiphumo soyilo esibalulekileyo kukuba awukwazi ukuyivula ngokupheleleyo i-MOSFET ngombane osezantsi kunobuncinane beVGS esetyenziselwa ukufikelela kukalisho lwe-RDS(on). Umzekelo, ukuqhuba i-MOSFET ngokupheleleyo nge-3.3V microcontroller, kufuneka ukwazi ukuvula i-MOSFET kwi-VGS=2.5V okanye ngaphantsi.
Ukumelana nokumelana, intlawulo yesango, kunye "nomfanekiso wokufaneleka"
Ukuxhathisa kwi-MOSFET kusoloko kumiselwa kumbane omnye okanye ngaphezulu wesango ukuya kumthombo. Ubuninzi bomda we-RDS(on) unokuba ngama-20% ukuya kuma-50% aphezulu kunexabiso eliqhelekileyo. Owona mda uphezulu we-RDS(on) udla ngokubhekisa kwixabiso kwiqondo lobushushu lesiphambuka esiyi-25°C. Kwiqondo lokushisa eliphezulu, i-RDS (kwi) inokunyuka nge-30% ukuya kwi-150%, njengoko kubonisiwe kwi-Figure 1. Ekubeni i-RDS (kwi) itshintsha ngeqondo lokushisa kunye nexabiso elincinci lokumelana alinakuqinisekiswa, ukufumanisa okwangoku okusekelwe kwi-RDS (on) akunjalo. indlela echaneke kakhulu.
Umzobo we-1 RDS (on) unyuka ngobushushu kuluhlu lwe-30% ukuya kwi-150% yobona bushushu bokusebenza
I-on-resistance ibaluleke kakhulu kuzo zombini i-N-channel kunye ne-P-channel MOSFETs. Ekutshintsheni unikezelo lwamandla, i-Qg yinqobo yokukhetha ephambili ye-N-channel MOSFETs esetyenziselwa ukutshintsha izixhobo zombane kuba i-Qg ichaphazela ilahleko yokutshintsha. Ezi lahleko zineziphumo ezimbini: enye lixesha lokutshintsha elichaphazela ukulayishwa nokucinywa kweMOSFET; enye amandla afunekayo ukuhlawula i-capacitance yesango ngexesha lenkqubo nganye yokutshintsha. Into enye ekufuneka uyikhumbule kukuba i-Qg ixhomekeke kumbane womthombo wesango, nokuba ukusebenzisa i-Vgs esezantsi kunciphisa ilahleko yokutshintsha. Njengendlela ekhawulezayo yokuthelekisa ii-MOSFETs ezenzelwe ukusetyenziswa ekutshintsheni usetyenziso, abaqulunqi bahlala besebenzisa ifomula eyodwa equka i-RDS(on) yelahleko yokuqhuba kunye ne-Qg yokutshintsha ilahleko: i-RDS(on)xQg. Le "figure of merit" (FOM) ishwankathela ukusebenza kwesixhobo kwaye ivumela ii-MOSFETs ukuba zithelekiswe ngokwexabiso eliqhelekileyo okanye eliphezulu. Ukuqinisekisa uthelekiso oluchanekileyo kuzo zonke izixhobo, kufuneka uqinisekise ukuba iVGS efanayo isetyenziselwa i-RDS(on) kunye ne-Qg, kwaye amaxabiso aqhelekileyo kunye aphezulu akwenzeki ukuba adityaniswe kunye kupapasho. I-FOM esezantsi iya kukunika ukusebenza okungcono ekutshintsheni usetyenziso, kodwa akuqinisekiswanga. Ezona ziphumo zothelekiso zingcono zinokufunyanwa kuphela kwisekethe yokwenene, kwaye kwezinye iimeko isekethe inokufuna ukulungiswa kakuhle kwi-MOSFET nganye. Ilinganiswe ngoku kunye nokutshatyalaliswa kwamandla, ngokusekelwe kwiimeko ezahlukeneyo zovavanyo, ezininzi ze-MOSFET zinemisinga enye okanye ngaphezulu eqhubekayo kwi-data sheet. Uya kufuna ukujonga kwiphepha ledatha ngononophelo ukufumanisa ukuba umlinganiselo ukwimeko exeliweyo yobushushu (umz. TC=25°C), okanye ubushushu be-ambient (umz. TA=25°C). Yiyiphi kwezi xabiso ezifanelekileyo kakhulu ziya kuxhomekeka kwiimpawu zesixhobo kunye nesicelo (jonga umfanekiso 2).
Umzobo 2 Onke amaxabiso aphezulu angoku kunye namandla datha yokwenyani
Kwizixhobo ezincinci zokuxhoma umphezulu ezisetyenziswa kwizixhobo eziphathwayo, elona nqanaba lifanelekileyo langoku linokuba lelo qondo lobushushu obungama-70°C. Kwizixhobo ezikhulu ezinezitshizi zokushisa kunye nokupholisa umoya okunyanzeliswayo, inqanaba langoku kwi-TA = 25 ℃ linokuba kufutshane neyona meko. Kwezinye izixhobo, ukufa kunokusingatha ngoku ngakumbi kwiqondo lobushushu eliphezulu lesiphambuka kunemida yephakheji. Kwamanye amaphepha edatha, le "die-limited" inqanaba langoku lulwazi olongezelelweyo kwi-package-limited level yangoku, enokunika ingcamango yokuqina kokufa. Iingqwalasela ezifanayo zisebenza ekulahlekeni kwamandla okuqhubekayo, okuxhomekeke kungekuphela nje kwiqondo lokushisa kodwa nakwixesha. Yiba nomfanekiso wesixhobo sisebenza ngokuqhubekayo kwi-PD=4W imizuzwana eyi-10 e-TA=70℃. Yintoni eyenza ixesha "eliqhubekayo" liya kwahluka ngokusekwe kwiphakheji ye-MOSFET, ke uya kufuna ukusebenzisa iyelenqe eliqhelekileyo le-thermal transient impedance plot kwi-database ukuze ubone ukuba ukutshatyalaliswa kwamandla kujongeka njani emva kwemizuzwana eli-10, imizuzwana eyi-100, okanye imizuzu eli-10. . Njengoko kubonisiwe kwi-Figure 3, i-coefficient yokumelana ne-thermal yesi sixhobo esikhethekileyo emva kwe-pulse ye-10-yesibini malunga ne-0.33, oku kuthetha ukuba xa iphakheji ifikelela kwi-thermal saturation emva kwemizuzu eyi-10, amandla okutshatyalaliswa kobushushu besixhobo yi-1.33W kuphela endaweni ye-4W. . Nangona amandla okutshatyalaliswa kobushushu besixhobo anokufikelela malunga ne-2W phantsi kokupholisa okulungileyo.
Umzobo 3 Ukumelana ne-Thermal ye-MOSFET xa i-pulse yamandla isetyenziswa
Enyanisweni, sinokwahlula indlela yokukhetha i-MOSFET ngamanyathelo amane.
Inyathelo lokuqala: khetha isitishi esinguN okanye isitishi esingu-P
Inyathelo lokuqala ekukhetheni isixhobo esifanelekileyo kuyilo lwakho kukwenza isigqibo sokuba usebenzise i-N-channel okanye i-P-channel MOSFET. Kwisicelo samandla esiqhelekileyo, xa i-MOSFET iqhagamshelwe emhlabeni kwaye umthwalo uqhagamshelwe kumbane we-mains, i-MOSFET yenza i-low-side switch. Kwi-low-side switch, i-N-channel MOSFETs kufuneka isetyenziswe ngenxa yokuqwalaselwa kwamandla ombane afunekayo ukucima okanye ukucima isixhobo. Xa i-MOSFET iqhagamshelwe kwibhasi kunye nomthwalo emhlabeni, iswitshi yecala eliphezulu isetyenziswa. Ii-MOSFET zamatshaneli e-P zidla ngokusetyenziswa kule topology, ekwangenxa yoqwalaselo lokuqhuba kombane. Ukukhetha isixhobo esifanelekileyo kwisicelo sakho, kuya kufuneka umisele umbane ofunekayo ukuqhuba isixhobo kunye neyona ndlela ilula yokuyenza kuyilo lwakho. Isinyathelo esilandelayo kukumisela umlinganiselo wombane ofunekayo, okanye ubuninzi bombane onokuthi wenziwe isixhobo. Ukuphakama komlinganiselo wombane, ixabiso eliphezulu lesixhobo. Ngokwamava asebenzayo, amandla ombane alinganisiweyo kufuneka abe mkhulu kunombane ombane ongundoqo okanye umbane webhasi. Oku kuya kubonelela ngokhuseleko olwaneleyo ukuze i-MOSFET ingaphumeleli. Xa ukhetha i-MOSFET, kuyimfuneko ukugqiba amandla ombane aphezulu anokunyamezela ukusuka kwi-drain ukuya kumthombo, oko kukuthi, i-VDS ephezulu. Kubalulekile ukwazi ukuba awona mandla ombane aphezulu eMOSFET anokumelana nokutshintsha kobushushu. Abaqulunqi kufuneka bavavanye ukuguquguquka kwamandla ombane kulo lonke uluhlu lobushushu obusebenzayo. I-voltage elinganisiweyo kufuneka ibe nomda owaneleyo ukugubungela olu luhlu lokutshintsha ukuqinisekisa ukuba isiphaluka asiyi kusilela. Eminye imiba yokhuseleko ekufuneka iinjineli zoyilo kufuneka ziqwalaselwe zibandakanya ukuhamba kwamandla ombane okubangelwa kukutshintsha izinto zombane ezinjengeenjini okanye iziguquli. Imilinganiselo yombane iyahluka kwizicelo ezahlukeneyo; ngokwesiqhelo, i-20V yezixhobo eziphathwayo, i-20-30V yezixhobo zombane zeFPGA, kunye ne-450-600V yezicelo ze-85-220VAC.
Inyathelo lesi-2: Misela ireyithi yangoku
Inyathelo lesibini kukukhetha ireyithingi yangoku yeMOSFET. Ngokuxhomekeke kubume besiphaluka, lo mjelo olinganisiweyo kufuneka ube ngowona mkhulu wangoku umthwalo unokumelana nazo zonke iimeko. Ngokufana nemeko yombane, umyili kufuneka aqinisekise ukuba i-MOSFET ekhethiweyo inokumelana nale rating yangoku, nokuba isistim ivelisa ii-spikes zangoku. Iimeko ezimbini zangoku eziqwalaselwayo yimowudi eqhubekayo kunye ne-pulse spike. Kwimo eqhubekayo yokuqhuba, i-MOSFET ikwimo ezinzileyo, apho ikhoyo ngoku ihamba ngokuqhubekayo kwisixhobo. I-pulse spike ibhekiselele kwi-surgery enkulu (okanye i-spike current) ehamba kwisixhobo. Emva kokuba ubuninzi bangoku phantsi kwezi meko buchongiwe, yinto nje yokukhetha isixhobo esinokusingatha lo mgangatho ophezulu. Emva kokukhetha i-current rated current, ilahleko yokuqhuba kufuneka nayo ibalwe. Kwiimeko zokwenyani, i-MOSFET ayisosixhobo esifanelekileyo kuba kukho ilahleko yamandla ombane ngexesha lenkqubo yokuqhuba, ebizwa ngokuba yilahleko yokuqhuba. I-MOSFET iziphatha njenge-resistor eguquguqukayo xa "ivuliwe", emiselwa yi-RDS(ON) yesixhobo kwaye itshintsha kakhulu ngobushushu. Ukulahlekelwa kwamandla kwesixhobo kungabalwa nge-Iload2 × RDS (ON). Ekubeni utshintsho oluchasene nobushushu, ilahleko yamandla nayo iya kutshintsha ngokulinganayo. Iphezulu i-voltage ye-VGS esetyenziswa kwi-MOSFET, encinci i-RDS (ON) iya kuba; ngokuchaseneyo, i-RDS(ON) ephezulu iya kuba. Kumyili wenkqubo, kulapho urhwebo lungena khona ngokuxhomekeke kumbane wenkqubo. Kuyilo oluphathwayo, kulula (kwaye kuxhaphake ngakumbi) ukusebenzisa amandla ombane asezantsi, ngelixa kuyilo lwemizi-mveliso, kunokusetyenziswa amandla ombane aphezulu. Qaphela ukuba i-RDS (ON) ukuchasana kuya kunyuka kancinci ngoku. Ukwahluka kwiiparamitha ezahlukeneyo zombane ze-RDS (ON) ukuchasana kunokufumaneka kwiphepha ledatha yobugcisa enikezelwe ngumenzi. Itekhnoloji inempembelelo enkulu kwiimpawu zesixhobo, kuba obunye ubuchwephesha buthanda ukwandisa i-RDS(ON) xa kunyuswa i-VDS ephezulu. Ngobuchwephesha obunjalo, ukuba unenjongo yokunciphisa i-VDS kunye ne-RDS (ON), kufuneka ukwandise ubungakanani be-chip, ngaloo ndlela ukwandisa ubungakanani bephakheji ehambelanayo kunye neendleko zophuhliso ezinxulumeneyo. Kukho iitekhnoloji ezininzi kwishishini elizama ukulawula ukwanda kobungakanani betshiphu, ezona zibalulekileyo kubo bubuchwephesha bokulinganisa itshaneli kunye nentlawulo. Kwitekhnoloji yetekhnoloji yomsele, umsele onzulu ufakwe kwi-wafer, uhlala ugcinwe kwii-voltages eziphantsi, ukunciphisa i-RDS (ON). Ukuze kuncitshiswe impembelelo ye-VDS ephezulu kwi-RDS (ON), ikholomu yokukhula kwe-epitaxial / etching column process isetyenziswe ngexesha lophuhliso. Umzekelo, i-Fairchild Semiconductor iphuhlise itekhnoloji ebizwa ngokuba yi-SuperFET eyongeza amanyathelo okwenziwa ongezelelweyo okunciphisa i-RDS(ON). Olu gxininiso kwi-RDS(ON) lubalulekile kuba njengoko amandla ombane wokuqhekeka kwe-MOSFET esemgangathweni enyuka, i-RDS(ON) inyuka kakhulu kwaye ikhokelela ekonyukeni kobungakanani bokufa. Inkqubo yeSuperFET iyalutshintsha unxulumano lwe-exponential phakathi kwe-RDS(ON) kunye nobungakanani bewafer bububudlelwane bomgca. Ngale ndlela, izixhobo zeSuperFET zinokufikelela kwi-RDS esezantsi (ON) kubungakanani obuncinci bokufa, nokuba ziivoltage zokuqhekeka ukuya kuthi ga kwi-600V. Isiphumo kukuba ubukhulu be-wafer bunokuncitshiswa ukuya kuthi ga kwi-35%. Kubasebenzisi bokugqibela, oku kuthetha ukuncitshiswa okubalulekileyo kobungakanani bephakheji.
Inyathelo lesithathu: Misela iiMfuno zeThermal
Inyathelo elilandelayo ekukhetheni i-MOSFET kukubala iimfuno ze-thermal zesistim. Abaqulunqi kufuneka baqwalasele iimeko ezimbini ezahlukeneyo, eyona meko imbi kakhulu kunye nemeko yehlabathi yokwenyani. Kucetyiswa ukuba kusetyenziswe isiphumo sokubala esibi kakhulu, kuba esi siphumo sibonelela ngomda omkhulu wokhuseleko kwaye siqinisekisa ukuba inkqubo ayiyi kusilela. Kukwakho nedatha yomlinganiselo efuna ukuqwalaselwa kwiphepha ledatha le-MOSFET; njengokumelana ne-thermal phakathi kwe-semiconductor junction yesixhobo esipakishweyo kunye nokusingqongileyo, kunye nobushushu obuphezulu besiphambuka. Ubushushu be-junction yesixhobo bulingana nobushushu obuphezulu be-ambient kunye nemveliso yokumelana ne-thermal kunye nokuchithwa kwamandla (iqondo lokushisa elidibeneyo = ubushushu obuphezulu be-ambient + [ukuxhathisa kwe-thermal × ukuchithwa kwamandla]). Ngokwalo mlinganiso, ukuchithwa kwamandla aphezulu kwenkqubo kunokusombululwa, elilingana ne-I2 × RDS (ON) ngenkcazo. Ekubeni umyili unqume ubuninzi bangoku oza kudlula kwisixhobo, i-RDS (ON) ingabalwa kumaqondo okushisa ahlukeneyo. Kuyafaneleka ukuba uqaphele ukuba xa ujongana neemodeli ezilula ze-thermal, abaqulunqi kufuneka baphinde baqwalasele umthamo we-thermal we-junction semiconductor / i-device case kunye nemeko / indalo; oku kufuna ukuba ibhodi yesekethe eprintiweyo kunye nephakheji musa ukufudumala ngokukhawuleza. Ukuqhekeka kweAvalanche kuthetha ukuba amandla ombane angasemva kwisixhobo sesemiconductor angaphezulu kwexabiso eliphezulu kwaye enze indawo yombane eyomeleleyo ukwandisa umsinga kwisixhobo. Lo wangoku uya kuchitha amandla, ukwandisa ubushushu besixhobo, kwaye mhlawumbi bonakalise isixhobo. Iinkampani zeSemiconductor ziya kuqhuba uvavanyo lwe-avalanche kwizixhobo, zibale umbane wazo we-avalanche, okanye zivavanye ukomelela kwesixhobo. Kukho iindlela ezimbini zokubala umbane we-avalanche olinganisiweyo; enye yindlela yokubala kwaye enye ibala lobushushu. I-Thermal calculation isetyenziswa ngokubanzi kuba iyasebenza ngakumbi. Iinkampani ezininzi zinike iinkcukacha zovavanyo lwesixhobo sabo. Umzekelo, iFairchild Semiconductor ibonelela nge-"Power MOSFET Avalanche Guidelines" (Izikhokelo zeAvalanche zaMandla eMOSFET-zinokukhutshelwa kwiwebhusayithi yeFairchild). Ukongeza kwikhompyuter, itekhnoloji nayo inefuthe elikhulu kwimpembelelo ye-avalanche. Umzekelo, ukonyuka kobungakanani bokufa kwandisa ukuxhathisa kwe-avalanche kwaye ekugqibeleni kwandisa ukomelela kwesixhobo. Kubasebenzisi bokugqibela, oku kuthetha ukusebenzisa iipakethe ezinkulu kwisistim.
Inyathelo 4: Misela ukusebenza kokutshintsha
Inyathelo lokugqibela ekukhetheni i-MOSFET kukumisela ukusebenza kokutshintsha kweMOSFET. Kukho iiparitha ezininzi ezichaphazela ukusebenza kokutshintsha, kodwa eyona nto ibaluleke kakhulu yisango / i-drain, isango / umthombo kunye ne-drain / source capacitance. Ezi capacitors zenza ilahleko zokutshintsha kwisixhobo kuba zihlawuliswa rhoqo xa zitshintsha. Isantya sokutshintsha se-MOSFET sincitshisiwe, kwaye ukusebenza kwesixhobo nako kuncitshisiwe. Ukubala ilahleko epheleleyo kwisixhobo ngexesha lokutshintsha, umyili kufuneka abale ilahleko ngexesha lokuvula (Eon) kunye neelahleko ngexesha lokucima (Eoff). Amandla ewonke otshintsho lwe-MOSFET anokubonakaliswa ngale equation ilandelayo: Psw=(Eon+Eoff)×ukutshintsha amaza. Intlawulo yesango (Qgd) inempembelelo enkulu ekutshintsheni ukusebenza. Ngokusekelwe kukubaluleka kokutshintsha ukusebenza, iteknoloji entsha iphuhliswa rhoqo ukusombulula le ngxaki yokutshintsha. Ukwandisa isayizi yetshiphu kwandisa intlawulo yesango; oku kwandisa ubungakanani besixhobo. Ukuze kuncitshiswe ilahleko yokutshintsha, kuye kwavela itekhnoloji entsha efana ne-channel thick bottom oxidation, ejolise ekunciphiseni intlawulo yesango. Umzekelo, itekhnoloji entsha yeSuperFET inokunciphisa ilahleko yokuqhuba kwaye iphucule ukusebenza kokutshintsha ngokunciphisa i-RDS(ON) kunye nentlawulo yesango (Qg). Ngale ndlela, ii-MOSFETs ziyakwazi ukumelana noguqulo lwamandla ombane anesantya esiphezulu (dv/dt) kunye nezinto ezidlulayo (di/dt) ngexesha lokutshintsha, kwaye zinokusebenza ngokuthembekileyo kumaza okutshintsha aphezulu.
Ixesha lokuposa: Oct-23-2023
