Izikhonkwane ezithathu ze-MOSFET, ndingazahlula njani?

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Izikhonkwane ezithathu ze-MOSFET, ndingazahlula njani?

I-MOSFETs (iField Effect Tubes) idla ngokuba nezikhonkwane ezintathu, iSango (G ngokufutshane), uMthombo (S ngokufutshane) kunye neDrain (D ngokufutshane). Ezi zikhonkwane zintathu zinokwahlulwa ngolu hlobo lulandelayo:

Izikhonkwane ezithathu ze-MOSFET, ndingazihlukanisa njani

I. Ukuchongwa kwePin

Isango (G):Ngokuqhelekileyo ibhalwe "G" okanye inokuchongwa ngokulinganisa ukuchasana kwezinye izikhonkwane ezimbini, njengoko isango linomqobo ophezulu kakhulu kwimeko engenamandla kwaye ayidibanisi kakhulu kwezinye izikhonkwane ezimbini.

Umthombo (S):Idla ngokubhalwa "S" okanye "S2", yi-inflow pin yangoku kwaye idla ngokudityaniswa nenegative terminal ye-MOSFET.

Umsele (D):Ngokuqhelekileyo ibhalwe "D", yipini yokuhamba yangoku kwaye iqhagamshelwe kwi-terminal eqinisekileyo yesekethe yangaphandle.

II. Pin Umsebenzi

Isango (G):Liqhosha eliphambili elilawula ukutshintshelwa kwe-MOSFET, ngokulawula amandla ombane esangweni ukuze alawule ukungena nokuphuma kwe-MOSFET. Kwimeko engenamandla, i-impedance yesango ngokuqhelekileyo iphezulu kakhulu, kungabikho uxhumano olubalulekileyo kwezinye izikhonkwane ezimbini.

Umthombo (S):liphini lokungena langoku kwaye lidla ngokuqhagamshelwa kwitheminali engalunganga ye-MOSFET. Kwi-NMOS, umthombo uhlala usekelwe (GND); kwi-PMOS, umthombo unokudityaniswa kwi-positive supply (VCC).

Umsele (D):Yintsimbi ephumayo yangoku kwaye iqhagamshelwe kwi-terminal eqinisekileyo yesekethe yangaphandle. Kwi-NMOS, i-drain ixhunyiwe kwi-positive supply (VCC) okanye umthwalo; kwi-PMOS, i-drain ixhunyiwe kumhlaba (GND) okanye umthwalo.

III. Iindlela zokulinganisa

Sebenzisa i-multimeter:

Seta i-multimeter kwisimo esifanelekileyo sokumelana (umz. R x 1k).

Sebenzisa i-terminal engalunganga ye-multimeter eqhagamshelwe kuyo nayiphi na i-electrode, enye ipeni ukuqhagamshelana nezibonda ezimbini eziseleyo ngokulandelelana, ukulinganisa ukuxhathisa kwayo.

Ukuba amaxabiso amabini okumelana nokulinganisa aphantse alingane, uqhagamshelwano olubi losiba lwesango (G), kuba isango kunye nezinye izikhonkwane ezimbini phakathi kokuchasana ngokuqhelekileyo zinkulu kakhulu.

Emva koko, i-multimeter iya kutsalelwa kwi-R × 1 gear, ipeni elimnyama eliqhagamshelwe kumthombo (S), ipeni elibomvu eliqhagamshelwe kwi-drain (D), ixabiso elilinganisiweyo lokuchasana kufuneka libe yi-ohms ezimbalwa ukuya kwi-ohms ezininzi, ebonisa. ukuba umthombo kunye nedreyini phakathi kweemeko ezithile kungaba conduction.

Qwalasela ulungiselelo lwephini:

Kwii-MOSFET ezinolungiselelo lwephini elichazwe kakuhle (njengezinye iifom zepakethe), indawo kunye nomsebenzi wephini ngalinye kunokumiselwa ngokujonga kwidayagram yolungiselelo lwepin okanye idatabase.

IV. Ukulumkela

Iimodeli ezahlukeneyo ze-MOSFETs zinokuba namalungiselelo ahlukeneyo epini kunye neempawu, ngoko ke kungcono ujongane nedatha okanye umzobo wepakethe yemodeli ethile phambi kokusetyenziswa.

 

Xa ulinganisa kwaye udibanisa izikhonkwane, qiniseka ukuba ubeke ingqalelo ekukhuselweni kombane osisigxina ukuphepha ukonakalisa iMOSFET.

 

Ii-MOSFET zizixhobo ezilawulwa ngamandla ombane ezinesantya esikhawulezayo sokutshintsha, kodwa kwizicelo ezisebenzayo kusafuneka ukuba kuqwalaselwe uyilo kunye nokulungiswa kwesekethe yedrive ukuqinisekisa ukuba i-MOSFET inokusebenza ngokufanelekileyo nangokuthembekileyo.

 

Isishwankathelo, izikhonkwane ezithathu ze-MOSFET zinokwahlulwa ngokuchanekileyo ngeendlela ezahlukeneyo ezifana nokuchongwa kwephini, umsebenzi wephini kunye neendlela zokulinganisa.


Ixesha lokuposa: Sep-19-2024