Ii-MOSFETsdlala indimaekutshintsheni iisekethekukulawula umbane wokuvula nokucima kunye noguqulo lomqondiso.Ii-MOSFETs inokwahlulwa ngokubanzi ibe ngamacandelo amabini: i-N-channel kunye ne-P-channel.
Kwi-N-channelI-MOSFETisiphaluka, iphini ye-BEEP iphezulu ukwenza impendulo ye-buzzer, kwaye iphantsi ukucima i-buzzer.P-channelI-MOSFETukulawula unikezelo lwamandla kwimodyuli ye-GPS kunye nokucima, i-GPS_PWR pin iphantsi xa ivuliwe, imodyuli ye-GPS unikezelo lwamandla oluqhelekileyo, kwaye phezulu ukwenza imodyuli yeGPS icime.
Ijelo lePI-MOSFETkwi-N-uhlobo lwe-silicon substrate kwindawo ye-P + inezimbini: i-drain kunye nomthombo. Ezi zibonda zimbini azihambisani omnye komnye, xa kukho amandla ombane awoneleyo adityanisiweyo kumthombo xa ubekwe phantsi, umphezulu we-silicon wodidi lwe-N ongezantsi kwesango uya kuvela njengomaleko ohlukileyo we-P, kumjelo odibanisa umjelo kunye nomthombo. . Ukutshintsha i-voltage esangweni kutshintsha ukuxinana kwemingxuma kwitshaneli, ngaloo ndlela utshintshe ukuchasana kwesiteshi. Oku kubizwa ngokuba yi-P-channel yokuphucula i-transistor yesiphumo sendawo.
Iimpawu ze-NMOS, ii-Vgs ukuba zingaphezulu kwexabiso elithile, zisebenza kumthombo osekelwe kwi-low-end drive case, ngaphandle kokuba umbane wesango le-4V okanye i-10V kumgca.
Iimpawu ze-PMOS, ngokuchasene ne-NMOS, ziya kuvula nje ukuba i-Vgs ingaphantsi kwexabiso elithile, kwaye ifanelekile ukusetyenziswa kwimeko ye-high end drive xa umthombo uxhunyiwe kwi-VCC. Nangona kunjalo, ngenxa yenani elincinci leentlobo ezitshintshileyo, ukuxhathisa okuphezulu kunye nexabiso eliphezulu, nangona i-PMOS inokusetyenziswa ngokufanelekileyo kwimeko ye-high-end drive, ngoko kwi-high-end drive, ngokubanzi isasebenzisa i-NMOS.
Kuko konke,Ii-MOSFETsbabe ne-impedance ephezulu yokufaka, iququzelele ukudibanisa ngokuthe ngqo kwiisekethe, kwaye kulula ukuyifaka kwiisekethe ezinkulu ezidibeneyo.
Ixesha lokuposa: Jul-20-2024
