Jonga kwii-MOSFETs

Ii-MOSFET zikhusela ii-MOSFET kwiisekethe ezidibeneyo.I-MOSFETs, njengenye yezona zixhobo zisisisekoisemiconductor intsimi, zisetyenziswa ngokubanzi kwiisekethe zenqanaba lebhodi kunye nakwi-IC design.I-drain kunye nomthombo weIi-MOSFETs zingatshintshwa, kwaye zenziwe kwi-backgate yodidi lwe-P enommandla wohlobo lwe-N. Ngokubanzi, imithombo emibini iyatshintshana, zombini zenza ummandla wohlobo lwe-N kwindawoP-uhlobo lwasemva. Ngokubanzi, le mimandla mibini iyafana, kwaye nokuba la macandelo mabini atshintshiwe, ukusebenza kwesixhobo akuyi kuchaphazeleka. Ngoko ke, isixhobo sithathwa njenge-symmetric.

Umgaqo:

I-MOSFET isebenzisa i-VGS ukulawula isixa se-"induced charge" ukutshintsha imeko ye-conductive channel eyenziwe zezi "intlawulo ezibangelwayo" ukulawula umsinga womlambo. Xa ziveliswa ii-MOSFETs, inani elikhulu leeyoni ezilungileyo zivela kwi-insulating layer ngokusebenzisa iinkqubo ezikhethekileyo, ukwenzela ukuba iintlawulo ezimbi ngakumbi zivakaliswe kwelinye icala le-interface, kwaye i-N-region ye-high-permeability ukungcola idityaniswe. ezi ntlawulo ezimbi, kunye nejelo conductive yenziwe, kwaye idreyini yangoku enkulu ngokwentelekiso, ID, iveliswa nokuba VGS 0. Ukuba isango lombane litshintshiwe, isixa intlawulo enyanzelwayo kwitshaneli kwakhona utshintsho, kunye nobubanzi. ye-conductive channel utshintsho kwinqanaba elifanayo. Ukuba i-voltage yesango iyatshintsha, inani lentlawulo enyanzelwayo kwitshaneli liya kutshintsha, kwaye ububanzi kwitshaneli yokuqhuba buya kutshintsha, ngoko i-ID yangoku ye-drain iya kutshintsha kunye nombane wesango.

Indima:

1. Ingasetyenziswa kwisiphaluka seamplifier. Ngenxa yegalelo eliphezulu lokuphazamiseka kweamplifier ye-MOSFET, i-capacitance yokudibanisa inokuba yincinci kwaye i-electrolytic capacitors ayinakusetyenziswa.

I-impedance ephezulu ifanelekile ukuguqulwa kwe-impedance. Ihlala isetyenziselwa ukuguqulwa kwe-impedance kwinqanaba lokufaka i-amplifiers yamanqanaba amaninzi.

3, Ingasetyenziswa njenge resistor variable.

I-4, ingasetyenziswa njengokutshintsha kwe-elektroniki.

Ii-MOSFET ngoku zisetyenziswa kuluhlu olubanzi lwezicelo, kubandakanywa iintloko ze-high-frequency kumabonakude kunye nokutshintsha umbane. Kule mihla, ii-bipolar eziqhelekileyo transistors kunye ne-MOS zidityaniswe kunye ukwenza i-IGBT (i-insulated gate bipolar transistor), esetyenziswa kakhulu kwiindawo ezinamandla amakhulu, kunye neesekethe ezidibeneyo ze-MOS zinempawu zokusetyenziswa kwamandla aphantsi, kwaye ngoku ii-CPU zisetyenziswa ngokubanzi Iisekethe ze-MOS.