Ukuqatshelwa kwe-Insulated Layer Gate MOSFETs

I-Insulation layer gate uhlobo lwe-MOSFET aliasI-MOSFET (emva koku kubhekiselwa kuyo njenge-MOSFET), ene-sheath yentambo yesilicon dioxide embindini wamandla ombane wesango kunye nomthombo wokutsalwa kwamanzi.

I-MOSFET nayoN-ijelo kunye ne-P-channel iindidi ezimbini, kodwa udidi ngalunye lwahlulwe lwaba luphuculo kunye nohlobo lokuncipha kokukhanya kwesibini, kungoko kukho iindidi ezine zizonke:Ukwandiswa kwejelo le-N, Uphuculo lwe-P-channel, i-N-channel yokunciphisa ukukhanya, uhlobo lwe-P-channel yokunciphisa ukukhanya. Kodwa apho umbane womthombo wesango ungu-zero, i-drain current ikwayi-zero yombhobho yokuphucula ityhubhu. Nangona kunjalo, apho i-voltage yomthombo wesango ingu-zero, i-drain current ayingo-zero ihlelwa njengeityhubhu zodidi olusebenzisa ukukhanya.
Umgaqo ophuculweyo we-MOSFET:

Xa usebenza embindini womthombo wesango awusebenzisi i-voltage, umbindi womthombo we-PN we-drain junction ukwicala elichaseneyo, ngoko ke akuyi kubakho mzila wokuqhuba, nokuba umbindi womthombo we-drain ene-voltage, umbane we-conductive tranch uvaliwe, akunakwenzeka ukuba ube nomsinga osebenzayo ngokutsho. Xa embindini womthombo wesango kunye ne-voltage yendlela elungileyo ukuya kwixabiso elithile, embindini womthombo wokuhambisa uya kuvelisa umjelo wokhuseleko oqhubayo, ukuze umsele wokuqhuba osanda kuveliswa ngumbane womthombo wesango ubizwa ngokuba yiVGS evulekileyo yombane. inkulu embindini wombane womthombo wesango, umsele wokuqhuba ubanzi, nto leyo eyenza ukuba kuhambe umbane omkhulu.

Umgaqo-siseko we-MOSFET yokuKhanya:

Ukusebenza, akukho mbane usetyenziswa embindini womthombo wesango, ngokungafaniyo nohlobo lophuculo lwe-MOSFET, kunye nejelo lokuqhuba likhona phakathi kumthombo wokukhupha amanzi, ngoko ke kuphela amandla ombane afanelekileyo adityanisiweyo kumbindi womthombo wokukhutshwa kwamanzi, onokuthi udityaniswe nombane. ibangela ukuqukuqela kwamanzi ngoku. Ngaphezu koko, umthombo wesango phakathi kwendlela elungileyo yombane, ukwandiswa kwetshaneli eqhubayo, yongeza icala elichasene nombane, itshaneli yokuhambisa iyancipha, ngokuhamba kombane iya kuba ncinci, kunye nokwandiswa kothelekiso lweMOSFET, inokuba kwinani eliqinisekileyo nelibi lenani elithile lemimandla ngaphakathi kumjelo wokuqhuba.

Ukusebenza kwe-MOSFET:

Okokuqala, ii-MOSFETs zisetyenziselwa ukwandisa. Ngenxa yokuba ukuchasana kwegalelo kwe-MOSFET amplifier kuphezulu kakhulu, ngoko ke i-capacitor yokucoca inokuba yincinci, ngaphandle kwesidingo sokusebenzisa i-electrolytic capacitors.

Okwesibini, i-MOSFET ephezulu kakhulu yokuchasana kwegalelo ilungele ngakumbi uguqulo lwe-impedance yeempawu. Isetyenziswa ngokuqhelekileyo kwinqanaba le-multi-level amplifier yegalelo lokuguqulwa kwe-impedance yeempawu.

I-MOSFET ingasetyenziswa njenge-resistor ehlengahlengiswayo.

Okwesine, i-MOSFET inokulungela njengobonelelo lwamandla lweDC.

V. I-MOSFET ingasetyenziswa njengento yokutshintsha.