Kukho izisombululo ezibini eziphambili:
Enye kukusebenzisa i-chip yomqhubi ozinikeleyo ukuqhuba i-MOSFET, okanye ukusetyenziswa kweefotocouplers ezikhawulezayo, ii-transistors zenza isekethe yokuqhuba i-MOSFET, kodwa uhlobo lokuqala lwendlela lufuna ukunikezelwa kombane ozimeleyo; Olunye uhlobo lwe-pulse transformer ukuqhuba i-MOSFET, kunye ne-pulse drive circuit, indlela yokuphucula ukutshintshela ukuphindaphinda kwesekethe yokuqhuba ukunyusa umthamo wokuqhuba, ngokusemandleni, ukunciphisa inani lamacandelo, yimfuno engxamisekileyo. ukusombulula iIingxaki zangoku.
Uhlobo lokuqala lweskimu sokuqhuba, i-half-bridge ifuna izixhobo ezimbini zombane ezizimeleyo; ibhulorho epheleleyo ifuna unikezelo lwamandla oluzimeleyo oluthathu, zombini isiqingatha-ibhulorho kunye nebhulorho epheleleyo, amacandelo amaninzi kakhulu, akulungele ukucutha iindleko.
Uhlobo lwesibini lwenkqubo yokuqhuba, kunye nelungelo elilodwa lomenzi wechiza lolona bugcisa busondeleyo kwigama lokuqamba "amandla aphezuluI-MOSFET drive circuit" patent (inombolo yesicelo 200720309534. 8), i-patent yongeza kuphela ukuchasana kokukhupha ukukhulula umthombo wesango lentlawulo ephezulu ye-MOSFET, ukufezekisa injongo yokuvala, umda owelayo wesignali ye-PWM mkhulu. Ukuwa komda wesiginali ye-PWM inkulu, nto leyo eya kukhokelela ekuvalweni kancinci kwe-MOSFET, ilahleko yamandla inkulu kakhulu;
Ukongeza, inkqubo ye-patent umsebenzi we-MOSFET usengozini yokuphazamiseka, kwaye i-chip yokulawula i-PWM kufuneka ibe namandla amakhulu okuvelisa, okwenza ukuba ukushisa kwe-chip kuphezulu, kuchaphazela ubomi benkonzo ye-chip. Imixholo yokuqanjwa Injongo yale modeli iluncedo kukubonelela ngesekethe ye-MOSFET ephezulu yamandla, ukusebenza ngokuzinzileyo kunye no-zero ukufezekisa injongo yale ndlela yokusetyenziswa kwesisombululo sobuchule sobuchule - isekethe ephezulu yamandla eMOSFET, isiphumo sophawu i-chip yokulawula i-PWM ixhunyiwe kwi-primary pulse transformer, i imveliso yokuqala of i-pulse transformer yesibini iqhagamshelwe kwisango lokuqala le-MOSFET, imveliso yesibini ye-pulse transformer yesibini iqhagamshelwe kwisango lokuqala le-MOSFET, isiphumo sesibini se-second pulse transformer iqhagamshelwe kwisango lokuqala le-MOSFET. Imveliso yokuqala ye-pulse transformer yesibini iqhagamshelwe kwisango le-MOSFET yokuqala, imveliso yesibini ye-pulse transformer yesibini iqhagamshelwe kwisango le-MOSFET yesibini, ebonakaliswe ekubeni isiphumo sokuqala se-pulse transformer yesibini idityanisiwe. ukuya kwi-transistor yokuqala yokukhupha, kwaye imveliso yesibini ye-pulse transformer yesibini nayo ixhunyiwe kwi-transistor yesibini yokukhupha. Icala eliphambili le-pulse transformer likwadibaniswe nokugcinwa kwamandla kunye nokukhulula isiphaluka.
Isiphaluka sokukhululwa kokugcinwa kwamandla kubandakanya i-resistor, i-capacitor kunye ne-diode, i-resistor kunye ne-capacitor idibaniswe ngokufanayo, kwaye i-parallel circuit ekhankanywe ngasentla idibaniswe ngokulandelelana kunye ne-diode. Imodeli eluncedo inesiphumo esiluncedo Imodeli eluncedo nayo ine-transistor yokuqala yokukhupha idityaniswe kwimveliso yokuqala ye-transformer yesibini, kunye neyesibini yokukhupha i-transistor eqhagamshelwe kwisiphumo sesibini se-pulse transformer, ukwenzela ukuba xa i-pulse transformer ikhupha iziphumo eziphantsi. kwinqanaba, i-MOSFET yokuqala kunye neyesibini i-MOSFET inokukhutshwa ngokukhawuleza ukuphucula isantya sokuvala i-MOSFET, kunye nokunciphisa ilahleko ye-MOSFET.Isiginali ye-PWM yokulawula i-chip idibaniswe ne-MOSFET yokukhulisa umqondiso phakathi kwemveliso yokuqala kunye ne-pulse. i-transformer primary, engasetyenziselwa ukukhulisa umqondiso. Imveliso yesignali ye-PWM yokulawula i-chip kunye ne-primary pulse transformer iqhagamshelwe kwi-MOSFET yokwandisa umqondiso, enokuphucula ngakumbi amandla okuqhuba isiginali ye-PWM.
I-primary pulse transformer iphinde idibaniswe kwisiphaluka sokukhululwa kokugcinwa kwamandla, xa isignali ye-PWM iphantsi kwinqanaba eliphantsi, isiphaluka sokukhululwa kokugcinwa kwamandla sikhupha amandla agcinwe kwi-pulse transformer xa i-PWM ikwizinga eliphezulu, iqinisekisa ukuba isango. Umthombo we-MOSFET yokuqala kwaye eyesibini i-MOSFET iphantsi kakhulu, nto leyo edlala indima ekuthinteleni ukuphazamiseka.
Kuphunyezo oluthile, i-MOSFET Q1 yamandla aphantsi yokukhulisa umqondiso iqhagamshelwe phakathi kwe-terminal ye-signal output A ye-PWM control chip kunye neprayimari ye-pulse transformer Tl, i-terminal yokuqala yokuphuma yesibini ye-pulse transformer iqhagamshelwe kuyo. Isango le-MOSFET Q4 yokuqala nge-diode D1 kunye ne-resistor yokuqhuba i-Rl, i-terminal ye-second ye-pulse transformer iqhagamshelwe kwisango le-MOSFET Q5 yesibini nge-diode D2 kunye ne-resistor R2 yokuqhuba, kunye I-terminal yokuqala yemveliso yesibini ye-pulse transformer ikwaqhagamshelwe kwi-drain triode yokuqala ye-Q2, kwaye i-drain triode yesibini ye-Q3 idityaniswe ne-drain triode yesibini ye-Q3. I-MOSFET Q5, i-terminal yokuqala yokuphuma kwe-pulse transformer secondary ikwaqhagamshelwe kwi-drain transistor yokuqala ye-Q2, kwaye i-terminal ephumayo yesibini ye-pulse transformer yesibini ikwaqhagamshelwe kwi-drain yesibini ye-transistor Q3.
Isango le-MOSFET Q4 yokuqala liqhagamshelwe kwi-drain resistor R3, kwaye isango le-MOSFET Q5 yesibini liqhagamshelwe kwi-drain resistor R4. eyona nto iphambili ye-pulse transformer Tl nayo idibaniswe nokugcinwa kwamandla kunye nokukhulula isiphaluka, kunye nokugcinwa kwamandla kunye nokukhululwa kwesekethe kubandakanya i-resistor R5, i-capacitor Cl, kunye ne-diode D3, kunye ne-resistor R5 kunye ne-capacitor Cl edibeneyo. i-parallel, kunye nesekethe ehambelanayo ekhankanywe ngasentla idibaniswe kuchungechunge kunye ne-diode D3. imveliso yesignali ye-PWM evela kwi-PWM yokulawula i-chip ixhunywe kwi-MOSFET Q2 yamandla aphantsi, kwaye i-MOSFET Q2 yamandla aphantsi idibaniswe nesibini se-pulse transformer. yandiswa ngamandla aphantsi e-MOSFET Ql kunye nemveliso ukuya kweprayimari ye-pulse transformer Tl. Xa isignali ye-PWM iphezulu, i-terminal yemveliso yokuqala kunye ne-terminal yemveliso yesibini ye-second ye-pulse transformer Tl ikhupha imiqondiso yenqanaba eliphezulu ukuqhuba i-MOSFET Q4 yokuqala kunye neyesibini i-MOSFET Q5 ukuqhuba.
Xa isignali ye-PWM iphantsi, imveliso yokuqala kunye nemveliso yesibini ye-pulse transformer Tl isiphumo sesibini senqanaba elisezantsi leempawu, i-drain yokuqala ye-transistor Q2 kunye neyesibini i-drain transistor Q3 conduction, i-MOSFETQ4 yokuqala yesango lomthombo we-capacitance ngokusebenzisa i-drain resistor R3, I-drain yokuqala ye-transistor Q2 yokukhupha, eyesibini i-MOSFETQ5 yesango lomthombo we-capacitance ngokusebenzisa i-drain resistor R4, eyesibini i-drain transistor Q3 yokukhupha, eyesibini i-MOSFETQ5 isango lomthombo wamandla ngokusebenzisa i-drain resistor R4, eyesibini i-drain transistor Q3 yokukhupha, eyesibini. I-MOSFETQ5 isango lomthombo we-capacitance ngokusebenzisa i-drain resistor R4, i-drain yesibini ye-transistor Q3 yokukhupha. Eyesibini i-MOSFETQ5 isango lomthombo we-capacitance ikhutshwa nge-drain resistor R4 kunye neyesibini i-drain transistor Q3, ukwenzela ukuba i-MOSFET Q4 yokuqala kunye neyesibini i-MOSFET Q5 inokucima ngokukhawuleza kwaye ilahleko yamandla ingancitshiswa.
Xa isibonakaliso se-PWM siphantsi, isiphaluka sokukhululwa kwamandla agciniweyo ahlanganiswe ne-resistor R5, i-capacitor Cl kunye ne-diode D3 ikhupha amandla agciniweyo kwi-pulse transformer xa i-PWM iphezulu, iqinisekisa ukuba umthombo wesango le-MOSFET Q4 yokuqala kunye ne-MOSFET yesibini. I-Q5 iphantsi kakhulu, esebenzela injongo yokuchasana nokuphazamiseka. I-Diode Dl kunye ne-diode D2 iqhuba i-output ngoku i-unidirectionally, ngaloo ndlela iqinisekisa umgangatho we-waveform ye-PWM, kwaye ngelo xesha, iphinda idlale indima yokuchasana nokuphazamiseka kwinqanaba elithile.
Ixesha lokuposa: Aug-02-2024
