Njengesinye sezona zixhobo zisisiseko kwintsimi ye-semiconductor, i-MOSFET isetyenziswa ngokubanzi kuyilo lwe-IC kunye nosetyenziso lwesekethe yenqanaba lebhodi. Ke wazi kangakanani malunga neeparamitha ezahlukeneyo zeMOSFET? Njengengcali kumandla ombane aphakathi naphantsi eMOSFET,Olukeyiya kukucacisela ngokweenkcukacha iiparamitha ezahlukeneyo zeMOSFET!
I-VDSS eyona nto iphezulu yomthombo wokuhambisa amanzi ombane
Umbane we-drain-source voltage xa i-drain drain current ifikelela kwixabiso elithile (inyuka ngokukhawuleza) phantsi kobushushu obuthile kunye nesango-umthombo wesekethe emfutshane. I-drain-source voltage kule meko ikwabizwa ngokuba yi-avalanche breakdown voltage. I-VDSS ine-coefficient yobushushu obufanelekileyo. Ku-50°C, i-VDSS imalunga ne-90% yaloo 25°C. Ngenxa yesibonelelo esihlala sishiywe kwimveliso eqhelekileyo, i-avalanche breakdown voltage yeI-MOSFETihlala ingaphezulu kombane olinganisiweyo.
Isikhumbuzi esifudumele sika-Olukey: Ukuze kuqinisekiswe ukuthembeka kwemveliso, phantsi kweemeko ezimbi kakhulu zokusebenza, kucetyiswa ukuba i-voltage yokusebenza ayifanele idlule i-80 ~ 90% yexabiso elilinganisiweyo.
VGSS ubuninzi besango-umthombo wokumelana kwamandla ombane
Ibhekisela kwixabiso le-VGS xa i-current current phakathi kwesango kunye nomthombo iqala ukunyuka ngokukhawuleza. Ukugqithisa eli xabiso lombane kuya kubangela ukuphuka kwe-dielectric yomaleko we-oksidi yesango, eyonakalisayo kwaye ingenakuguqulwa.
I-ID ephezulu yomthombo wangoku
Ibhekisela kubuninzi bangoku obuvunyelwe ukuba budlule phakathi kombhobho kunye nomthombo xa i-transistor yesiphumo sentsimi isebenza ngokuqhelekileyo. Ukusebenza kwangoku kwe-MOSFET akufuneki kudlule kwi-ID. Le parameter iya kuncipha njengoko iqondo lokushisa linyuka.
I-IDM eyona nto iphezulu ye-pulse drain-source current
Ibonakalisa inqanaba le-pulse yangoku enokuthi iphathwe sisixhobo. Le parameter iya kuncipha njengoko iqondo lokushisa linyuka. Ukuba le parameter incinci kakhulu, inkqubo ingaba semngciphekweni wokuqhekeka ngoku ngexesha lovavanyo lwe-OCP.
PD ubuninzi bokutshatyalaliswa kwamandla
Ibhekisa kumandla okukhutshwa kwe-drain-source ephezulu evunyelwe ngaphandle kokuwohloka komsebenzi we-transistor yesiphumo sentsimi. Xa isetyenziswe, ukusetyenziswa kwamandla okwenene kwi-transistor yempembelelo yentsimi kufuneka ibe ngaphantsi kwe-PDSM kwaye ishiye umda othile. Le parameter ngokubanzi iyehla njengoko ubushushu besiphambuka sinyuka.
I-TJ, i-TSTG yobushushu bokusebenza kunye noluhlu lobushushu bendawo yokugcina
Ezi parameters zimbini zilungelelanisa ubushushu besiphambuka esivunyelwe yindawo yokusebenza kunye nokugcinwa kwesixhobo. Olu luhlu lobushushu lusetelwe ukuhlangabezana neyona mfuno iphantsi yobomi bokusebenza kwesixhobo. Ukuba isixhobo siqinisekiswa ukuba sisebenza ngaphakathi kolu luhlu lobushushu, ubomi bayo bokusebenza buya kwandiswa kakhulu.
Ixesha lokuposa: Dec-15-2023
