Ii-MOSFET kwiziLawuli zeZithuthi zoMbane

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Ii-MOSFET kwiziLawuli zeZithuthi zoMbane

I-1, indima ye-MOSFET kumlawuli wesithuthi sombane

Ngamagama alula, i-motor iqhutywa yimveliso yangoku yeI-MOSFET, i-high output current (ukwenzela ukukhusela i-MOSFET ekutshiseni, umlawuli unokhuseleko lomda wangoku), i-motor torque yomelele, inamandla ngakumbi ukukhawuleza.

 

2, isiphaluka solawulo lwemo yokusebenza ye-MOSFET

Vula inkqubo, kwimeko, ngaphandle kwenkqubo, imo yokunqunyulwa, imeko yokwaphuka.

Eyona lahleko ingundoqo ye-MOSFET ibandakanya ilahleko yokutshintsha (inkqubo yokuvula nokucima), ilahleko yokuqhuba, ilahleko yokucuthwa (okubangelwa kukuvuza kwangoku, okungahoywanga), ilahleko yamandla e-avalanche. Ukuba ezi lahleko zilawulwa kuluhlu olunyamezelekayo lwe-MOSFET, i-MOSFET iya kusebenza ngokufanelekileyo, ukuba idlula uluhlu olunyamezelekayo, umonakalo uya kwenzeka.

Ilahleko yokutshintsha idla ngokuba nkulu kunelahleko yemeko yokuqhuba, ngakumbi i-PWM ayivulekanga ngokupheleleyo, kwimo yokumodareyitha kobubanzi be-pulse (ehambelana nemeko yokukhawulezisa isiqalo semoto yombane), kwaye imeko ephezulu ekhawulezayo idla ngokuba yilahleko yokuqhuba. kulawulwa.

WINSOK DFN3.3X3.3-8L MOSFET

3, oonobangela abaphambili beUMOSumonakalo

I-Overcurrent, i-high current ebangelwa umonakalo ophezulu wokushisa (izinga eliphezulu eliqhubekayo kunye ne-instantaneous high current pulses ezibangelwa ukushisa kwe-junction kudlula ixabiso lokunyamezela); i-overvoltage, inqanaba lokukhupha amanzi kumthombo mkhulu kunombane wokuqhekeka kunye nokuqhekeka; ukutshatyalaliswa kwesango, ngokuqhelekileyo ngenxa yokuba i-voltage yesango yonakaliswe yisekethe yangaphandle okanye ye-drive ngaphezu kombane ophezulu ovumelekileyo (ngokubanzi kufuna ukuba i-voltage yesango ibe ngaphantsi kwe-20v), kunye nomonakalo wombane ongatshintshiyo.

 

4, umgaqo wokutshintsha we-MOSFET

I-MOSFET sisixhobo esiqhutywa ngamandla ombane, okoko nje isango G kunye nenqanaba lomthombo S ukunika amandla ombane afanelekileyo phakathi kwenqanaba lomthombo S no-D liya kwenza isekethe yokuqhuba phakathi kwenqanaba lomthombo. Ukuxhathisa le ndlela yangoku kuba kukuchasana kwangaphakathi kwe-MOSFET, oko kukuthi, ukuxhathisa. Ubungakanani bobu buxhakaxhaka bangaphakathi bumisela eyona nto iphezulu kwi-state yangokuI-MOSFETi-chip inokumelana (ngokuqinisekileyo, inxulumene nezinye izinto, eyona nto ifanelekileyo kukuxhathisa kwe-thermal). Incinci ukuchasana kwangaphakathi, inkulu ikhoyo ngoku.

 


Ixesha lokuposa: Apr-24-2024