Njengesinye sezona zixhobo zisisiseko kwintsimi ye-semiconductor, ii-MOSFETs zisetyenziswa ngokubanzi kuyilo lwe-IC kunye neesekethe zomgangatho webhodi. Okwangoku, ngakumbi kwicandelo le-semiconductors yamandla aphezulu, iintlobo ngeentlobo zezakhiwo ze-MOSFETs nazo zidlala indima engenakuthathelwa indawo. KubaIi-MOSFETs, Ulwakhiwo olunokuthi luyi-set of simple and complex in one, elula ilula kwisakhiwo sayo, i-complex isekelwe kwisicelo sokuqwalaselwa kwayo ngokunzulu. Ngemihla ngemihla,I-MOSFET ubushushu ikwagqalwa njengemeko eqhelekileyo kakhulu, isitshixo kufuneka sazi izizathu ukusuka phi, kwaye zeziphi iindlela zingasonjululwa? Okulandelayo masihlangane ukuze siqonde.
I. Iimbangela zeI-MOSFET ukufudumeza
1, ingxaki yoyilo lwesekethe. Kukuvumela i-MOSFET isebenze kwimeko ye-intanethi, hayi kwimeko yokutshintsha. Esi sesinye sezizathu zokuba i-MOSFET ibe shushu. Ukuba i-N-MOS yenza utshintsho, i-voltage ye-G kufuneka ibe yi-V embalwa ngaphezu kokunikezelwa kwamandla ukuze isebenze ngokupheleleyo, kwaye okuchaseneyo kuyinyaniso kwi-P-MOS. Ayivulekanga ngokupheleleyo kwaye ukuhla kwamandla ombane kukhulu kakhulu okukhokelela kusetyenziso lwamandla, i-impedance ye-DC elinganayo inkulu ngokwentelekiso, ukuhla kwamandla ombane kuyenyuka, ngoko ke i-U * ndiyanyuka, ilahleko ithetha ubushushu.
2, i-frequency iphezulu kakhulu. Ubukhulu becala ngamanye amaxesha kakhulu kumthamo, okukhokelela ekunyukeni rhoqo, ilahleko yeMOSFET ekonyukeni, ekhokelela ekufudumezweni kweMOSFET.
3, umsinga uphezulu kakhulu. Xa i-ID ingaphantsi kowona mkhulu wangoku, iya kubangela ukuba i-MOSFET ishushu.
4, ukhetho lwemodeli ye-MOSFET alulunganga. Ukuchasana kwangaphakathi kwe-MOSFET akuqwalaselwa ngokupheleleyo, okukhokelela ekunyuseni kokutshintsha kokutshintsha.二,
Isisombululo se-MOSFET sokuvelisa ubushushu obuqatha
1, Yenza umsebenzi olungileyo kuyilo lokutshona kobushushu lweMOSFET.
I-2, Yongeza iisinki zokufudumala ezaneleyo.
I-3, Ncamathisela i-adhesive ye-sink yokushisa.
Ixesha lokuposa: May-19-2024
