MOSFET Anti-Reverse Circuit

Okokuqala, umgaqo osisiseko we-MOSFET anti-reverse circuit

I-MOSFET anti-reverse circuit isebenzisa iimpawu zokutshintsha ze-MOSFET, ngokulawula i-voltage yesango (G) ukuqonda isekethi ivuliwe kunye nokucima. Xa i-polarity yonikezelo lwamandla ichanekile, i-voltage yesango yenza i-MOSFET kwisimo sokuqhuba, i-current ingahamba ngokuqhelekileyo; xa i-polarity yonikezelo lwamandla iguqulwa, i-voltage yesango ayikwazi ukwenza i-MOSFET conduction, ngaloo ndlela inqumle isekethe.

Okwesibini, ukufezekiswa okuthe ngqo kwe-MOSFET anti-reverse circuit

1. I-N-channel MOSFET anti-reverse circuit

Ii-MOSFET ze-N-channel zidla ngokusetyenziselwa ukuqonda iisekethe ezichasene ne-reverse. Kwisekethe, umthombo (S) we-N-channel MOSFET uqhagamshelwe kwi-terminal engafanelekanga yomthwalo, i-drain (D) iqhagamshelwe kwi-terminal ye-positive yonikezelo lwamandla, kwaye isango (G) liqhagamshelwe i-terminal engalunganga yonikezelo lwamandla ngokusebenzisa i-resistor okanye ilawulwa yisekethe yokulawula.

Uxhulumaniso oluya phambili: i-terminal eqinisekileyo yonikezelo lwamandla iqhagamshelwe kwi-D, kwaye i-terminal engathandekiyo idityaniswe kwi-S. Ngeli xesha, i-resistor inika i-voltage source source (VGS) ye-MOSFET, kwaye xa i-VGS inkulu kunomgubasi. amandla ombane (Vth) eMOSFET, iMOSFET iqhuba, kwaye umqukuqelo wangoku usuka kwitheminali elungileyo yobonelelo lwamandla ukuya kumthwalo ngeMOSFET.

Xa iguqulwa: i-terminal eqinisekileyo yonikezelo lwamandla iqhagamshelwe kwi-S, kwaye i-terminal engalunganga ixhunywe kwi-D. Ngeli xesha, i-MOSFET ikwimeko ye-cutoff kwaye isiphaluka sinqanyuliwe ukukhusela umthwalo kumonakalo ngenxa yokuba isango lombane. ayikwazi ukwenza i-VGS eyaneleyo yokwenza ukuziphatha kwe-MOSFET (i-VGS inokuba ngaphantsi kwe-0 okanye ngaphantsi kwe-Vth).

2. Indima yeeNgxelo eziNcedisayo

Isixhasi: Isetyenziselwa ukunika amandla ombane wesango le-MOSFET kunye nokunciphisa isango langoku ukuthintela umonakalo ongaphaya kwesango.

Isilawuli sombane: icandelo elikhethiweyo elisetyenziselwa ukuthintela amandla ombane omthombo wesango ukuba abe phezulu kakhulu kwaye wophule iMOSFET.

I-Parasitic Diode: I-parasitic diode (i-body diode) ikhona ngaphakathi kwe-MOSFET, kodwa umphumo wayo udla ngokungahoywa okanye uthintelwe yinkqubo yesekethe ukuphepha umphumo wayo onobungozi kwiisekethe ezichasene ne-reverse.

Okwesithathu, iingenelo ze-MOSFET anti-reverse circuit

 

Ilahleko ephantsi: I-MOSFET kwi-resistance incinci, i-voltage on-resistance iyancitshiswa, ngoko ke ilahleko yesekethe incinci.

 

 

Ukuthembeka okuphezulu: umsebenzi we-anti-reverse unokufezekiswa ngoyilo lwesekethe olulula, kwaye i-MOSFET ngokwayo inezinga eliphezulu lokuthembeka.

 

Ukuguquguquka: iimodeli ezahlukeneyo zeMOSFET kunye noyilo lweesekethe zinokukhethwa ukuhlangabezana neemfuno ezahlukeneyo zesicelo.

 

Ukulumkela

 

Kuyilo lwe-MOSFET anti-reverse circuit, kufuneka uqinisekise ukuba ukukhethwa kwe-MOSFETs ukuhlangabezana neemfuno zesicelo, kubandakanywa i-voltage, yangoku, isantya sokutshintsha kunye nezinye iiparitha.

 

Kuyimfuneko ukuqwalasela impembelelo yamanye amacandelo kwisekethe, njenge-parasitic capacitance, inductance parasitic, njl., ukwenzela ukuphepha imiphumo emibi ekusebenzeni kwesekethe.

 

Kwizicelo ezisebenzayo, uvavanyo olufanelekileyo kunye nokuqinisekiswa kuyafuneka kwakhona ukuze kuqinisekiswe ukuzinza nokuthembeka kwesekethe.

 

Isishwankathelo, i-mosFET anti-reverse circuit yinkqubo yokukhusela umbane elula, ethembekileyo kunye nelahleko ephantsi esetyenziswa ngokubanzi kwiintlobo ezahlukeneyo zezicelo ezifuna ukukhuselwa kwe-polarity yamandla okubuyisela umva.