Field Effect Transistor ifinyeziwe njengeI-MOSFETKukho iintlobo ezimbini eziphambili: iityhubhu zempembelelo yentsimi ye-junction kunye ne-metal-oxide semiconductor field effect tubes. I-MOSFET ikwabizwa ngokuba yi-unipolar transistor enoninzi lwabathwali ababandakanyekayo kwi-conductivity. Zizixhobo zesemiconductor ezilawulwa ngamandla ombane. Ngenxa yokuchasana kwegalelo eliphezulu, ingxolo ephantsi, ukusetyenziswa kwamandla aphantsi, kunye nezinye iimpawu, okwenza kube ngumkhuphisana onamandla kwi-bipolar transistors kunye ne-transistors yamandla.
I. Iiparamitha eziphambili zeMOSFET
1, DC iiparamitha
I-Saturation drain current ingachazwa njenge-drain current ehambelana naxa amandla ombane phakathi kwesango kunye nomthombo alingana no-zero kwaye umbane phakathi kwe-drain kunye nomthombo mkhulu kunombane wokupinkisha.
I-Pinch-off voltage UP: I-UGS efunekayo ukunciphisa i-ID kumbane omncinci xa i-UDS iqinisekile;
Umbane wokuvula i-UT: I-UGS efunekayo ukuzisa i-ID kwixabiso elithile xa i-UDS iqinisekile.
2, iiparamitha zeAC
I-Gm ye-low-frequency transconductance : Ichaza umphumo wokulawula isango kunye nomthombo wombane kwi-drain current.
I-Inter-pole capacitance: i-capacitance phakathi kwee-electrode ezintathu ze-MOSFET, encinci ixabiso, ngcono ukusebenza.
3, Nciphisa iiparamitha
Ukukhupha, i-voltage breakdown source: xa i-drain current iphakama ngokukhawuleza, iya kuvelisa ukuphuka kwe-avalanche xa i-UDS.
I-voltage yokutshatyalaliswa kwesango: i-junction field effect ityhubhu yokusebenza okuqhelekileyo, isango kunye nomthombo phakathi kwe-PN junction kwimeko ye-bias eguquguqukayo, yangoku inkulu kakhulu ukuvelisa ukuphuka.
II. Iimpawu zeIi-MOSFETs
I-MOSFET inomsebenzi wokukhulisa kwaye inokwenza isekethe eyandisiweyo. Xa kuthelekiswa ne-triode, inezi mpawu zilandelayo.
(1) I-MOSFET sisixhobo esilawulwa ngamandla ombane, kwaye amandla alawulwa yi-UGS;
(2) Okwangoku kwigalelo le-MOSFET lincinci kakhulu, ngoko ke ukuchasana kwegalelo kuphezulu kakhulu;
(3) Ukuzinza kwayo kobushushu kulungile kuba isebenzisa uninzi lwabathwali be-conductivity;
(4) I-coefficient yokwandisa amandla ombane wesekethe yokukhulisa i-voltage incinci kunaleyo ye-triode;
(5) Iyakwazi ukumelana nemitha.
Isithathu,I-MOSFET kunye nothelekiso lwe-transistor
(1) Umthombo we-MOSFET, isango, idreyini kunye nomthombo we-triode, isiseko, ipali yokumisela ihambelana nendima efanayo.
(2) I-MOSFET sisixhobo sangoku esilawulwa ngamandla ombane, i-coefficient yokukhulisa incinci, isakhono sokukhulisa sisezantsi; i-triode sisixhobo sombane esilawulwa ngoku, isakhono sokukhulisa sinamandla.
(3) Isango le-MOSFET ngokusisiseko alithathi okwangoku; kunye nomsebenzi we-triode, isiseko siya kutsala umsinga othile. Ke ngoko, ukuchasana kokufakwa kwesango le-MOSFET kuphezulu kunokumelana nokufakwa kwe-triode.
(4) Inkqubo yokuqhuba ye-MOSFET inenxaxheba ye-polytron, kwaye i-triode ithatha inxaxheba kwiintlobo ezimbini ze-carriers, i-polytron kunye ne-oligotron, kwaye ukuxinwa kwayo kwe-oligotron kuchaphazeleka kakhulu bubushushu, imitha kunye nezinye izinto, ngoko ke, i-MOSFET. inozinzo olungcono lobushushu kunye nokumelana nemitha kune-transistor. I-MOSFET kufuneka ikhethwe xa iimeko zokusingqongileyo zitshintsha kakhulu.
(5) Xa i-MOSFET iqhagamshelwe kumthombo wesinyithi kunye ne-substrate, umthombo kunye ne-drain inokutshintshwa kwaye iimpawu azitshintshi kakhulu, ngelixa xa umqokeleli kunye ne-emitter ye-transistor itshintshisana, iimpawu ziyahluka kunye nexabiso le-β. iyancipha.
(6) Inani lengxolo ye-MOSFET lincinci.
(7) I-MOSFET kunye ne-triode inokuqulunqwa ngeendidi zeesekethe zeamplifier kunye neesekethe zokutshintsha, kodwa eyokuqala isebenzisa amandla amancinci, uzinzo oluphezulu lwe-thermal, uluhlu olubanzi lwamandla ombane, ngoko isetyenziswa ngokubanzi kubukhulu kunye ne-ultra-large- isikali iisekethe ezihlanganisiweyo.
(8) I-on-resistance ye-triode inkulu, kwaye ukuxhathisa kwe-MOSFET kuncinci, ngoko ke ii-MOSFETs zisetyenziswa ngokubanzi njengokutshintsha okunokusebenza okuphezulu.
Ixesha lokuposa: May-16-2024
