Okokuqala, uhlobo kunye nolwakhiwo lwe-MOSFET, i-MOSFET yi-FET (enye yi-JFET), inokuveliswa ibe luhlobo oluphuculweyo okanye lokuncipha, i-P-channel okanye i-N-channel zizonke iindidi ezine, kodwa usetyenziso lwe-N ephuculweyo kuphela. -ii-MOSFET zamatshaneli kunye nee-MOSFET zamatshaneli aphuculweyo, ezidla ngokubizwa ngokuba yi-NMOSFET, okanye i-PMOSFET ibhekisa kwi-NMOSFET edla ngokukhankanywa, okanye i-PMOSFET ibhekisa kwezi ntlobo zimbini. Kwezi ntlobo zimbini zee-MOSFETs eziphuculweyo, ii-NMOSFET zisetyenziswa kakhulu ngenxa yokunganyangeki kwazo okuphantsi kunye nokulula ukwenziwa kwazo. Ke ngoko, ii-NMOSFET ziqhele ukusetyenziswa ekutshintsheni unikezelo lwamandla kunye nezicelo zokuqhuba iimoto, kwaye le intshayelelo ilandelayo ikwagxile kwii-NMOSFET. I-parasitic capacitance ikhona phakathi kwezikhonkwane ezintathu zeI-MOSFET, okungafunekiyo, kodwa kunoko ngenxa yokulinganiselwa kwenkqubo yokuvelisa. Ubukho be-parasitic capacitance yenza kube nzima ukuyila okanye ukukhetha isekethe yomqhubi. Kukho i-parasitic diode phakathi kombhobho kunye nomthombo. Oku kubizwa ngokuba yi-diode yomzimba kwaye ibalulekile ekuqhubeni imithwalo ye-inductive efana neemoto. Ngendlela, i-diode yomzimba ikhona kuphela kwi-MOSFETs nganye kwaye ihlala ingekho ngaphakathi kwe-IC chip.
Ngoku keI-MOSFETqhuba izicelo low-voltage, xa ukusetyenziswa kombane 5V, ngeli xesha ukuba usebenzisa isakhiwo totem pole yemveli, ngenxa transistor ibe malunga 0.7V ukuhla kwamandla ombane, okubangele eyona yokugqibela yongezwa kwisango kumbane kuphela. 4.3 V. Ngeli xesha, sikhetha i-nominal gate voltage ye-4.5V ye-MOSFET kubukho beengozi ezithile. Ingxaki efanayo yenzeka ekusebenziseni i-3V okanye ezinye izihlandlo zonikezelo lwamandla aphantsi. Amandla ombane amabini asetyenziswa kwezinye iisekethe zolawulo apho icandelo lengqiqo lisebenzisa i-5V eqhelekileyo okanye i-3.3V yombane wedijithali kwaye icandelo lamandla lisebenzisa i-12V okanye nangaphezulu. Amandla ombane amabini axhunyiwe kusetyenziswa umhlaba oqhelekileyo. Oku kubeka imfuneko yokusebenzisa isekethi evumela icala lamandla ombane aphantsi ukuba lilawule ngokufanelekileyo iMOSFET kwicala lamandla ombane aphezulu, ngelixa iMOSFET kwicala lamandla ombane aphezulu iza kujongana neengxaki ezifanayo ezikhankanywe ku-1 no-2.
Kuzo zontathu iimeko, ulwakhiwo lwe-totem pole alunakufikelela kwiimfuno zemveliso, kwaye uninzi lwee-IC zomqhubi we-MOSFET ezingaphandle kweshelufa azibonakali ngathi zibandakanya ubume bomda wesango lombane. I-voltage yegalelo ayilona xabiso elimiselweyo, liyahluka kunye nexesha okanye ezinye izinto. Olu tshintsho lubangela ukuba amandla ombane okuqhuba abonelelwa kwi-MOSFET yisekethe ye-PWM angazinzi. Ukuze kwenziwe i-MOSFET ikhuseleke kumbane wombane wesango eliphezulu, ii-MOSFET ezininzi zinezilawuli zombane ezakhelwe ngaphakathi ukuze zinciphise ngamandla amandla ombane wesango. Kule meko, xa i-voltage ye-drive ibonelele ngaphezu kwe-voltage regulator, iya kubangela ukusetyenziswa kwamandla amakhulu angatshintshiyo ngaxeshanye, ukuba usebenzisa umgaqo we-resistor voltage divider ukunciphisa umbane wesango, kuya kubakho umbane ophezulu kakhulu. igalelo lombane, iI-MOSFETisebenza kakuhle, ngelixa i-voltage yegalelo iyancitshiswa xa i-voltage yesango ingonelanga ukubangela ukuqhutywa okungaphantsi kokugqiba, ngaloo ndlela inyusa ukusetyenziswa kwamandla.
Isekethe eqhelekileyo apha kuphela kwisekethe yomqhubi we-NMOSFET ukwenza uhlalutyo olulula: I-Vl kunye ne-Vh yi-low-end kunye ne-high-end power supply, i-voltages ezimbini zinokufana, kodwa i-Vl akufanele idlule i-Vh. I-Q1 kunye ne-Q2 zenza i-totem pole inverted, esetyenziselwa ukuqonda ukuhlukaniswa, kwaye ngexesha elifanayo ukuqinisekisa ukuba i-tube yomqhubi we-Q3 kunye ne-Q4 ayiyi kuba yinkqubo yexesha elifanayo. I-R2 kunye ne-R3 zibonelela nge-PWM yombane we-R2 kunye ne-R3 zibonelela ngereferensi yombane we-PWM, ngokutshintsha le ngcaciso, unokuvumela ukuba umsebenzi wesiphaluka kwi-wave wave ye-PWM ibe ngumnqantsa kwaye uthe tye. I-Q3 kunye ne-Q4 zisetyenziselwa ukubonelela nge-drive yangoku, ngenxa yexesha, i-Q3 kunye ne-Q4 ngokumalunga ne-Vh kunye ne-GND kuphela ubuncinci bokuhla kwe-Vce, oku kuhla kwamandla ombane ngokuqhelekileyo kuphela yi-0.3V okanye kunjalo, ephantsi kakhulu. kune-0.7V Vce i-R5 kunye ne-R6 ngabaxhathisi bempendulo, esetyenziselwa isango i-R5 kunye ne-R6 yi-resistors yempendulo esetyenziselwa isampuli yombane wesango, ethi ke idluliselwe kwi-Q5 ukuvelisa impendulo enamandla engalunganga kwiziseko ze-Q1 kunye ne-Q2, ngaloo ndlela inciphisa. umbane wesango ukuya kwixabiso elilinganiselweyo. Eli xabiso lingahlengahlengiswa nge-R5 kunye ne-R6. Ekugqibeleni, i-R1 ibonelela ngokukhawulelana kwesiseko sangoku kwi-Q3 kunye ne-Q4, kwaye i-R4 inika umda wesango langoku kwii-MOSFETs, okukukunciphisa i-Ice ye-Q3Q4. I-acceleration capacitor inokudityaniswa ngokuhambelana ngasentla kwe-R4 ukuba kuyimfuneko.
Ixesha lokuposa: Apr-21-2024
