I-MOSFETs (i-Metal-Oxide-Semiconductor Field-Effect Transistor) idla ngokubonwa njengezixhobo ezilawulwa ngokupheleleyo. Oku kungenxa yokuba imeko yokusebenza (ivuliwe okanye ivaliwe) ye-MOSFET ilawulwa ngokupheleleyo ngamandla ombane wesango (Vgs) kwaye ayixhomekeke kwisiseko sangoku njengakwimeko ye-bipolar transistor (BJT).
Kwi-MOSFET, i-voltage yesango i-Vgs inquma ukuba ngaba umjelo oqhubayo wenziwa phakathi komthombo kunye ne-drain, kunye nobubanzi kunye nokuhamba komjelo wokuqhuba. Xa i-Vgs idlula i-threshold voltage Vt, itshaneli yokuqhuba iyakhiwa kwaye i-MOSFET ingena kwimeko-bume; xa i-Vgs iwela ngaphantsi kwe-Vt, itshaneli yokuqhuba iyanyamalala kwaye i-MOSFET ikwimeko yokunqunyulwa. Olu lawulo lulawulwa ngokupheleleyo kuba amandla ombane wesango anokuzimela kwaye alawule ngokuchanekileyo imeko yokusebenza ye-MOSFET ngaphandle kokuxhomekeka kwezinye iiparamitha zangoku okanye zombane.
Ngokwahlukileyo, imeko yokusebenza yezixhobo ezilawulwa ngesiqingatha (umzekelo, i-thyristors) ayichatshazelwa kuphela yi-voltage yolawulo okanye yangoku, kodwa kunye nezinye izinto (umzekelo, i-anode voltage, i-current, njl.). Ngenxa yoko, izixhobo ezilawulwa ngokupheleleyo (umzekelo, ii-MOSFETs) zihlala zibonelela ngokusebenza ngcono ngokuchaneka kolawulo kunye nokuguquguquka.
Isishwankathelo, ii-MOSFET zizixhobo ezilawulwa ngokupheleleyo iimeko zazo zokusebenza zilawulwa ngokupheleleyo ngumbane wesango, kwaye zineenzuzo zokuchaneka okuphezulu, ukuguquguquka okuphezulu kunye nokusetyenziswa kwamandla aphantsi.
Ixesha lokuposa: Sep-20-2024
