Namhlanje kumandla aphezulu asetyenziswa ngokuqhelekileyoI-MOSFETukwazisa ngokufutshane umthetho-siseko wayo wokusebenza. Jonga indlela ewuqonda ngayo umsebenzi wayo.
I-Metal-Oxide-Semiconductor oko kukuthi, i-Metal-Oxide-Semiconductor, ngokuchanekileyo, eli gama lichaza isakhiwo se-MOSFET kwisekethe edibeneyo, oko kukuthi: kwisakhiwo esithile sesixhobo se-semiconductor, kunye ne-silicon dioxide kunye nesinyithi, ukubunjwa. yesango.
Umthombo kunye ne-drain ye-MOSFET iyachaswa, zombini ziyizowuni zohlobo lwe-N ezenziwe kwi-backgate yohlobo lwe-P. Kwiimeko ezininzi, ezi ndawo zimbini ziyafana, nokuba iziphelo ezimbini zohlengahlengiso aziyi kuchaphazela ukusebenza kwesixhobo, isixhobo esinjalo sithathwa njenge-symmetrical.
Ulwahlulo: ngokohlobo lwemathiriyeli yomjelo kunye nohlobo lwesango olugqunyiweyo lwe-N-channel nganye kunye ne-P-channel ezimbini; ngokwemowudi yokuqhuba: I-MOSFET yahlulwe ibe yi-depletion kunye nophuculo, ngoko ke i-MOSFET yahlulwe yaba yi-N-channel depletion kunye nokuphucula; Ukuncipha kwetshaneli kunye nokwandiswa kweendidi ezine eziphambili.
Umgaqo we-MOSFET wokusebenza - iimpawu zesakhiwoI-MOSFETiqhuba kuphela abathwali be-polarity (iipolys) ezibandakanyekayo kwi-conductive, i-unipolar transistor. Indlela yokuqhuba iyafana ne-MOSFET yamandla aphantsi, kodwa isakhiwo sinomohluko omkhulu, i-MOSFET yamandla aphantsi sisixhobo sokuqhuba esithe tye, uninzi lwamandla e-MOSFET ethe nkqo yesakhiwo sokuqhuba, ekwaziwa ngokuba yi-VMOSFET, ephucula kakhulu i-MOSFET. amandla ombane wesixhobo kunye namandla okumelana nangoku. Eyona nto ibalulekileyo kukuba kukho umaleko we-silica insulation phakathi kwesango lentsimbi kunye nomjelo, kwaye ngoko unokumelana okuphezulu kwegalelo, ityhubhu iqhuba kwiindawo ezimbini eziphezulu ze-n diffusion zone ukwenza i-n-type conductive channel. Ukwandiswa kwe-n-chaneli Ii-MOSFETs kufuneka zisetyenziswe esangweni ngokuthambekela phambili, kwaye kuphela xa amandla ombane omthombo wesango mkhulu kunombane wombane wethreshold wetshaneli yokuqhuba eveliswa yi-n-channel MOSFET. I-n-channel depletion type MOSFETs zii-n-channel MOSFETs apho amajelo okuqhuba aveliswa xa kungekho mbane wesango usetyenziswayo (isango lombane lomthombo nguziro).
Umgaqo wokusebenza kwe-MOSFET kukulawula isixa "sentlawulo eyenziwayo" ngokusebenzisa i-VGS ukuguqula imeko ye-conductive channel eyenziwa yi "induced charge", kwaye emva koko ufezekise injongo yokulawula i-drain current. Ekwenziweni kwemibhobho, ngokusebenzisa inkqubo insulating umaleko ekuveleni inani elikhulu ion ezintle, ngoko ke kwelinye icala ujongano kunokunyanzeliswa intlawulo embi ngakumbi, ezi ntlawulo ezingalunganga ukuya phezulu kokungena ukungcola kwi-N. ummandla oqhagamshelwe ekubunjweni komjelo wokuqhuba, nakwi-VGS = 0 kukho kwakhona ukuvuza okukhulu kwe-ID yangoku. xa i-voltage yesango itshintshiwe, isixa sentlawulo esinyanzelwa kwitshaneli sikwatshintshile, kunye nobubanzi betshaneli eqhubayo kunye nokuxinana kwetshaneli kunye nokutshintsha, kwaye ngaloo ndlela i-ID yokuvuza yangoku kunye nombane wesango. I-ID yangoku iyahluka kunye nombane wesango.
Ngoku isicelo seI-MOSFETiphucule kakhulu ukufunda kwabantu, ukusebenza kakuhle, ngelixa iphucula umgangatho wobomi bethu. Sinengqiqo elungelelanisiweyo ngayo ngokuqonda okulula. Akuyi kusetyenziswa kuphela njengesixhobo, ukuqonda ngakumbi iimpawu zayo, umgaqo womsebenzi, oya kusinika ulonwabo olukhulu.
Ixesha lokuposa: Apr-18-2024
