Kutshintsho lwamandla kunye nenkqubo yoyilo lwenkqubo yonikezelo lwamandla, abayili benkqubo baya kunikela ingqalelo engakumbi kwinani leeparamitha eziphambili zeI-MOSFET, njenge-resistor ecinyiweyo, amandla ombane amakhulu okusebenza, ukuhamba kwamandla amakhulu. Nangona le elementgxeka, ukuqwalasela indawo engafanelekanga kuya kwenza ukuba isiphaluka sonikezelo lwamandla singasebenzi ngokufanelekileyo, kodwa ngokwenene, oku kugqitywa kuphela isinyathelo sokuqala,ye-MOSFET iiparamitha zeparasitic eyakho ithathwa njengento ebalulekileyo yokubeka emngciphekweni isekethe yonikezelo lwamandla.
Ukuqhuba ngokukhawuleza kwee-MOSFETs ezine-ICs zobonelelo lwamandla
Isekethe yomqhubi we-MOSFET elungileyo inala malungiselelo alandelayo:
(1) Ngeli xesha ukutshintshwa kokutshintsha kwenziwe, isekethe yomqhubi kufuneka ikwazi ukukhupha umsinga omkhulu kakhulu, ukuze i-voltage yokusebenza ye-MOSFET-source-inter-pole inyuke ngokukhawuleza iye kwixabiso elifunekayo, ukuqinisekisa ukuba iswitshi inokuguqulwa. ngokukhawuleza kwaye akuyi kubakho i-oscillations ephezulu-frequency kwi-edge yokunyuka.
(2) umbane wokuvula nokucima umbane, isekethe yokuqhubela phambili inokuqinisekisa ukuba amandla ombane ombane osebenza phakathi kweepali zeMOSFET agcinwa ixesha elide, kunye nokuqhutywa okusebenzayo.
(3) Vala umzuzwana wesekethe yokuqhuba, unokubonelela ngomjelo ophantsi wothintelo kumandla ombane osebenza kwisango le-MOSFET phakathi kombhobho okhawulezayo, ukuqinisekisa ukuba iswitshi inokucima ngokukhawuleza.
(4) Ulwakhiwo olulula kunye noluthembekileyo lweesekethe zokuqhuba kunye nokugqoka okuphantsi kunye nokukrazula.
(5) Ngokwemeko ethile ukwenza ukhuseleko.
Kunikezelo lwamandla kwimodyuli yolawulo, eyona ixhaphakileyo yi-IC yonikezelo lwamandla oluqhuba ngqo iMOSFET. isicelo, kufuneka ingqalelo idrayivu enkulu elona xabiso liphezulu lokuhamba kwamandla, i-MOSFET yokusabalalisa i-2 parameters eziphambili. Amandla okuqhuba i-IC, ubungakanani be-MOS yokuhanjiswa kwamandla, ixabiso lokumelana ne-drive resistor liya kubeka emngciphekweni izinga lokutshintsha amandla e-MOSFET. Ukuba ukhetho MOSFET unikezelo capacitance mkhulu ngokwentelekiso, unikezelo lwamandla IC yangaphakathi drive ubunakho akwanelanga, kufuneka ibe kwisekethe drive ukuphucula isakhono drive, ngokufuthi isicelo itotem pole umbane wesekethe ukunyusa unikezelo lwamandla IC drive isakhono. .
Ixesha lokuposa: Jul-25-2024
