"MOSFET" sisishunqulelo seMetal Oxide Semicoductor Field Effect Transistor. Isixhobo esenziwe ngezinto ezintathu: isinyithi, i-oxide (i-SiO2 okanye i-SiN) kunye ne-semiconductor. I-MOSFET yenye yezona zixhobo zisisiseko kwindawo ye-semiconductor. Nokuba ikuyilo lwe-IC okanye ibhodi-level yeesekethe izicelo, ibanzi kakhulu. Iiparamitha eziphambili zeMOSFET ziquka i-ID, i-IDM, VGSS, V(BR)DSS, RDS(on), VGS(th), njl. Uyazazi ezi? Inkampani ye-OLUKEY, njenge-winsok yaseTaiwan ephakathi ukuya kwi-high-end medium kunye ne-low-voltageI-MOSFETUmnikezeli wenkonzo yearhente, uneqela eliphambili elineminyaka ephantse ibe ngama-20 yamava ukukucacisela ngokweenkcukacha iiparamitha ezahlukeneyo ze-MOSFET!
Inkcazo yentsingiselo yeeparamitha zeMOSFET
1. Iiparamitha ezigqithisileyo:
I-ID: Ubuninzi bomthombo wangoku wokuhambisa amanzi. Ibhekisela kubuninzi bangoku obuvunyelwe ukuba budlule phakathi kombhobho kunye nomthombo xa i-transistor yesiphumo sentsimi isebenza ngokuqhelekileyo. Umsebenzi wangoku we-transistor yesiphumo sentsimi kufuneka ungadluli kwi-ID. Le parameter iyancipha njengoko iqondo lokushisa linyuka.
I-IDM: Owona mthombo wamanzi we-pulsed drain-source current. Le parameter iya kuncipha njengoko iqondo lokushisa le-junction linyuka, libonisa ukuchasana kwempembelelo kwaye linxulumene nexesha le-pulse. Ukuba le parameter incinci kakhulu, inkqubo ingaba semngciphekweni wokuqhekeka ngoku ngexesha lovavanyo lwe-OCP.
PD: Amandla aphezulu achithwayo. Ibhekisa kumandla okukhutshwa kwe-drain-source ephezulu evunyelwe ngaphandle kokuwohloka komsebenzi we-transistor yesiphumo sentsimi. Xa isetyenziswa, olona setyenziso lwamandla lweFET kufuneka lube ngaphantsi kwaleyo yePDSM kwaye lushiye umda othile. Le parameter ngokubanzi iyancipha njengoko ubushushu besiphambuka busanda
I-VDSS: Ubuninzi bomthombo wombane wokutsala amanzi ombane. Umbane we-drain-source voltage xa i-drain drain current ifikelela kwixabiso elithile (inyuka ngokukhawuleza) phantsi kobushushu obuthile kunye nesango-umthombo wesekethe emfutshane. I-drain-source voltage kule meko ikwabizwa ngokuba yi-avalanche breakdown voltage. I-VDSS ine-coefficient yobushushu obufanelekileyo. Ku-50°C, i-VDSS imalunga ne-90% yaloo 25°C. Ngenxa yesibonelelo esihlala sishiywe kwimveliso eqhelekileyo, amandla ombane wokuqhekeka kwe-avalanche ye-MOSFET ihlala ingaphezulu kombane olinganiselweyo.
OLUKEYIingcebiso ezifudumeleyo: Ukuqinisekisa ukuthembeka kwemveliso, phantsi kweemeko ezimbi kakhulu zokusebenza, kucetyiswa ukuba i-voltage yokusebenza ayifanele idlule i-80 ~ 90% yexabiso elilinganisiweyo.
I-VGSS: Ubuninzi besango-umthombo wokumelana kwamandla ombane. Ibhekisela kwixabiso le-VGS xa i-current current phakathi kwesango kunye nomthombo iqala ukunyuka ngokukhawuleza. Ukugqithisa eli xabiso lombane kuya kubangela ukuphuka kwe-dielectric yomaleko we-oksidi yesango, eyonakalisayo kwaye ingenakuguqulwa.
TJ: Elona qondo lobushushu liphezulu lesiphambuka sokusebenza. Iqhele ukuba yi-150℃ okanye i-175℃. Ngaphantsi kweemeko zokusebenza zoyilo lwesixhobo, kuyimfuneko ukuphepha ukugqithisa lo bushushu kwaye ushiye umda othile.
TSTG: uluhlu lobushushu bokugcina
Ezi parameters zimbini, i-TJ kunye ne-TSTG, zilungelelanisa udidi lweqondo lokushisa lokuhlangana elivunyelwe yindawo yokusebenza kunye nokugcinwa kwesixhobo. Olu luhlu lobushushu lusetelwe ukuhlangabezana neyona mfuno iphantsi yobomi bokusebenza kwesixhobo. Ukuba isixhobo siqinisekiswa ukuba sisebenza ngaphakathi kolu luhlu lobushushu, ubomi bayo bokusebenza buya kwandiswa kakhulu.
2. Iiparamitha ezimileyo
Iimeko zovavanyo lwe-MOSFET ngokubanzi ziyi-2.5V, 4.5V, kunye ne-10V.
I-V(BR)DSS: Umbane wokonakaliswa kwemithombo yokukhutshwa kwamanzi. Ibhekiselele kuwona mandla ombane aphezulu we-drain-source voltage enokuthi i-transistor yesiphumo sentsimi inokumelana xa i-voltage yomthombo wesango i-VGS ingu-0. Le yiparamitha yokunciphisa, kwaye umbane osebenzayo osetyenziswa kwi-transistor yesiphumo sentsimi kufuneka ube ngaphantsi kwe-V (BR) DSS. Ineempawu ezintle zobushushu. Ngoko ke, ixabiso le parameter phantsi kweemeko zokushisa eziphantsi kufuneka zithathwe njengengqwalasela yokhuseleko.
△V(BR)DSS/△Tj: Iqondo lomlinganiso we-drain-source breakdown voltage, jikelele yi-0.1V/℃
I-RDS (kwi): Phantsi kweemeko ezithile ze-VGS (ngokuqhelekileyo i-10V), iqondo lokushisa le-junction kunye ne-drain current, ubuninzi bokuchasana phakathi kwe-drain kunye nomthombo xa i-MOSFET ivuliwe. Yiparameter ebaluleke kakhulu emisela amandla asetyenzisiweyo xa i-MOSFET ivuliwe. Le parameter yonyuka ngokubanzi njengoko ubushushu besiphambuka bonyuka. Ngoko ke, ixabiso lale parameter kwiqondo lokushisa eliphezulu kakhulu le-junction kufuneka lisetyenziswe ekubaleni ilahleko kunye nokuhla kwamandla ombane.
I-VGS (th): i-voltage yokuvula (i-voltage ye-threshold). Xa i-voltage yokulawula isango langaphandle i-VGS idlula i-VGS (th), i-surface inversion layers ye-drain kunye nemimandla yomthombo yenza umjelo odibeneyo. Kwizicelo, i-voltage yesango xa i-ID ilingana ne-1 mA phantsi kwe-drain short-circuit condition idla ngokubizwa ngokuba yi-turn-on voltage. Le parameter ngokubanzi iyancipha njengoko ubushushu besiphambuka sinyuka
I-IDSS: i-drain-source current, i-drain-source current xa i-voltage yesango i-VGS=0 kunye ne-VDS ilixabiso elithile. Ngokuqhelekileyo kwinqanaba le-microamp
IGSS: isango lomthombo wokuqhuba ngoku okanye umva ngoku. Kuba i-impedance ye-MOSFET yegalelo inkulu kakhulu, i-IGSS ikwinqanaba le-nanoamp ngokubanzi.
3. Iiparamitha ezinamandla
gfs: transconductance. Ibhekisa kumlinganiselo wotshintsho kwi-drain output yangoku kutshintsho kwi-voltage yomthombo wesango. Ngumlinganiselo wokukwazi umbane wesango lomthombo wombane wokulawula umjelo wamanzi. Nceda ujonge itshathi yobudlelwane botshintshiselwano phakathi kwe-gfs kunye neVGS.
Qg: Umthamo wokutshaja kwesango. I-MOSFET sisixhobo sokuqhuba sohlobo lombane. Inkqubo yokuqhuba yinkqubo yokusekwa kombane wesango. Oku kuphunyezwa ngokuhlawulisa amandla phakathi komthombo wesango kunye nesango lokukhupha amanzi. Lo mba uza kuxutyushwa ngokweenkcukacha ngezantsi.
Qgs: Umthamo wokutshaja wesango
Qgd: intlawulo yesango lokuya kumsele (uthathela ingqalelo isiphumo seMiller). I-MOSFET sisixhobo sokuqhuba sohlobo lombane. Inkqubo yokuqhuba yinkqubo yokusekwa kombane wesango. Oku kuphunyezwa ngokuhlawulisa amandla phakathi komthombo wesango kunye nesango lokukhupha amanzi.
Td(on): ixesha lokulibaziseka kokuqhuba. Ixesha ukusuka xa igalelo lombane liphakama ukuya kwi-10% de i-VDS yehla ukuya kwi-90% ye-amplitude yayo.
Tr: ixesha lokunyuka, ixesha lokuba i-voltage ye-VDS yemveliso yehle ukusuka kwi-90% ukuya kwi-10% ye-amplitude yayo.
Td (off): Ukucima ixesha lokulibaziseka, ixesha ukusuka xa umbane wegalelo wehla ukuya kwi-90% ukuya xa i-VDS iphakama ukuya kwi-10% yombane wayo wokucisha.
Tf: Ixesha lokuwa, ixesha lokuba i-voltage ye-VDS yemveliso inyuke ukusuka kwi-10% ukuya kwi-90% ye-amplitude yayo.
I-Ciss: I-Input capacitance, i-short-circuit i-drain kunye nomthombo, kwaye ulinganise i-capacitance phakathi kwesango kunye nomthombo kunye nomqondiso we-AC. Ciss= CGD + CGS (CDS short circuit). Inempembelelo ngqo kwi-turn-on kunye nokucima ukulibaziseka kwesixhobo.
I-Coss: I-output capacitance, i-short-circuit isango kunye nomthombo, kunye nokulinganisa i-capacitance phakathi kwe-drain kunye nomthombo ngophawu lwe-AC. I-Coss = CDS +CGD
Crss: Ukubuyisela umva amandla othumelo. Ngomthombo oxhunywe kumhlaba, umthamo olinganisiweyo phakathi kwe-drain kunye nesango Crss=CGD. Enye yeeparamitha ezibalulekileyo zokutshintsha kukunyuka nokuwa kwexesha. Crss=CGD
I-interelectrode capacitance kunye ne-MOSFET induced capacitance ye-MOSFET yahlulahlulwe yaba yi-input capacitance, i-output capacitance kunye ne-feedback capacitance ngabakhiqizi abaninzi. Amaxabiso acatshulweyo ngawe-voltage esisigxina yokukhupha ukuya kumthombo. Ezi zakhono zitshintsha njengoko umbane we-drain-source voltage utshintsha, kwaye ixabiso le-capacitance linesiphumo esilinganiselwe. I-input capacitance value inika kuphela isalathisi esiqikelelwayo sokutshaja okufunwa ngumqhubi wesekethe, ngelixa ulwazi lokutshaja kwesango luluncedo ngakumbi. Ibonisa ubungakanani bamandla isango ekufuneka lihlawuliswe ukufikelela kumbane othile wesango ukuya kumthombo.
4. Iiparamitha zokuqhekeka kweAvalanche
Ipharamitha yeempawu zokuqhekeka kwe-avalanche sisalathiso sokukwazi kwe-MOSFET ukumelana nombane ogqithisileyo kummandla ongekhoyo. Ukuba i-voltage idlula umbane we-drain-source limit limit, isixhobo siya kuba kwimeko ye-avalanche.
I-EAS: I-pulse enye ye-avalanche yamandla ophula amandla. Lo ngumda weparamitha, ebonisa amandla okuqhekeka kwe-avalanche aphezulu anokumelana ne-MOSFET.
IAR: i-avalanche yangoku
INDLEBE: I-Avalanche Breakdown Energy ephindaphindiweyo
5. Iiparamitha ze-vivo diode
IS: Ubuninzi obuqhubekayo be-freewheeling yangoku (ukusuka kumthombo)
I-ISM: i-pulse maximum freewheeling yangoku (ukusuka kumthombo)
VSD: Ukuhla kwamandla ombane angaphambili
Trr: ixesha lokubuyisela umva
Qrr: Ukubuyisela umva intlawulo
ITon: Ixesha lokuqhuba phambili. (Ngokusisiseko ayinanto)
Ixesha lokuvula le-MOSFET kunye nenkcazo yexesha lokucima
Ngexesha lenkqubo yesicelo, ezi mpawu zilandelayo zihlala zifuna ukuqwalaselwa:
1. Iimpawu ezifanelekileyo ze-coefficient ye-V (BR) DSS. Olu phawu, olwahlukileyo kwizixhobo ze-bipolar, luzenza zithembeke ngakumbi njengoko ubushushu obuqhelekileyo bokusebenza bukhula. Kodwa kwakhona kufuneka ubeke ingqalelo ekuthembekeni kwayo ngexesha lobushushu obuphantsi buqala ukubanda.
2. Iimpawu ze-coefficient yeqondo lokushisa elibi le-V (GS) th. Umda wesango elinokwenzeka liya kuncipha ukuya kumlinganiselo othile njengoko ubushushu besiphambuka bukhula. Olunye utshiso lwemitha nalo luya kunciphisa lo mqobo unakho, mhlawumbi nangaphantsi kwe-0 amandla. Olu phawu lufuna ukuba iinjineli zithathele ingqalelo uphazamiseko kunye nokuxhokonxa ubuxoki kwee-MOSFET kwezi meko, ngakumbi kwizicelo ze-MOSFET ezinobume obuphantsi. Ngenxa yolu phawu, ngamanye amaxesha kuyimfuneko ukuyila i-off-voltage ye-voltage yomqhubi wesango kwixabiso elibi (ngokubhekiselele kuhlobo lwe-N, uhlobo lwe-P kunye nokunye) ukuphepha ukuphazamiseka kunye nokubangela ubuxoki.
3.Iimpawu ze-coefficient zeqondo lokushisa elihle le-VDSon/RDSo. Uphawu lokuba i-VDSon/RDSon yonyuka kancinane njengoko ubushushu besiphambuka busanda senza ukuba kube lula ukusebenzisa ngokuthe ngqo ii-MOSFETs ngaxeshanye. Izixhobo ze-bipolar zichasene kulo mba, ngoko ke ukusetyenziswa kwazo ngokuhambelana kuba nzima kakhulu. I-RDSon nayo iya kunyuka kancinci njengoko i-ID inyuka. Olu phawu kunye neempawu ezintle zobushushu besiphambuka kunye nomphezulu we-RDSon zenza ukuba i-MOSFET ithintele ukophuka kwesibini njengezixhobo ze-bipolar. Nangona kunjalo, kufuneka kuqatshelwe ukuba umphumo wolu phawu ulinganiselwe. Xa isetyenziswa ngokunxuseneyo, i-push-tsali okanye ezinye izicelo, awukwazi ukuxhomekeka ngokupheleleyo kulawulo oluzimeleyo loluphawu. Amanye amanyathelo asisiseko asafuneka. Olu phawu lukwachaza ukuba ilahleko yokuqhuba iba nkulu kumaqondo obushushu aphezulu. Ngoko ke, ingqalelo ekhethekileyo kufuneka ihlawulwe ekukhethweni kweeparamitha xa kubalwa ilahleko.
4. Iimpawu ze-ID ye-coefficient yeqondo lokushisa elibi, ukuqonda iiparamitha ze-MOSFET kunye neempawu zayo eziphambili ze-ID ziya kuncipha kakhulu njengoko ubushushu be-junction bonyuka. Olu phawu lwenza ukuba kufuneke ukuba kuqwalaselwe iiparamitha zayo ze-ID kumaqondo obushushu aphezulu ngexesha loyilo.
5. Iimpawu ze-coefficient yeqondo lokushisa elibi lobuchule be-avalanche IER / EAS. Emva kokunyuka kobushushu besiphambuka, nangona i-MOSFET iya kuba ne-V(BR)DSS enkulu, kufuneka kuqatshelwe ukuba i-EAS iya kuncitshiswa kakhulu. Oko kukuthi, ukukwazi ukumelana nama-avalanche phantsi kweemeko eziphezulu zokushisa kubuthathaka kakhulu kunoko kubushushu obuqhelekileyo.
6. Amandla okuqhuba kunye nokusebenza kokubuyisela umva kwakhona kwe-parasitic diode kwi-MOSFET akukho nto ingcono kuneediode eziqhelekileyo. Akulindelekanga ukuba isetyenziswe njengomphathi ophambili wangoku kwi-loop kuyilo. Iidiode zokuthintela zivame ukudibaniswa kuluhlu ukuze zingasebenzi i-parasitic diode emzimbeni, kwaye i-diodes eyongezelelweyo ehambelanayo isetyenziselwa ukwenza i-carrier carrier yombane. Nangona kunjalo, inokuthi ithathelwe ingqalelo njengomthwali kwimeko yokuqhuba ixesha elifutshane okanye ezinye iimfuno ezincinci zangoku ezifana nokulungiswa kwe-synchronous.
7. Ukunyuka ngokukhawuleza kwamandla okukhupha amanzi kunokubangela ukuba i-spurious-triggering ye-gate drive, ngoko ke oku kunokwenzeka kufuneka kuthathelwe ingqalelo kwiinkqubo ezinkulu ze-dVDS / dt (i-high-frequency fast switching circuits).
Ixesha lokuposa: Dec-13-2023
