Iindaba

Umgaqo wokusebenza we-MOSFET usekelwe ikakhulu kwiipropati zayo ezizodwa kunye nefuthe lendawo yombane. Oku kulandelayo yingcaciso eneenkcukacha zendlela ezisebenza ngayo ii-MOSFETs:

I. Ubume obusisiseko be-MOSFET

I-MOSFET ibandakanya ubukhulu becala isango (G), umthombo (S), idrain (D), kunye nesubstrate (B, ngamanye amaxesha iqhagamshelwe kumthombo ukuze yenze isixhobo seendlela ezintathu). Kwii-MOSFET zophuculo lwe-channel ye-N, i-substrate idla ngokuba yinto ye-silicon ephantsi-doped apho imimandla emibini yodidi oluphezulu lwe-N yenziwa khona ukuze isebenze njengomthombo kunye ne-drain, ngokulandelelanayo. Umphezulu we-P-uhlobo lwe-substrate ugqunywe ngefilimu ye-oxide encinci kakhulu (i-silicon dioxide) njengomaleko okhuselayo, kwaye i-electrode izotywa njengesango. Esi sakhiwo senza isango lifakwe kwi-P-type semiconductor substrate, i-drain kunye nomthombo, kwaye ngoko ke ibizwa ngokuba yi-insulated-gate effect field.

II. Umgaqo wokusebenza

Ii-MOSFETs zisebenza ngokusebenzisa i-gate source voltage (VGS) ukulawula i-drain current (ID). Ngokukodwa, xa i-voltage yomthombo wesango echanekileyo, i-VGS, inkulu kuno-zero, indawo yombane ephezulu kunye nesezantsi engalunganga iya kuvela kumaleko we-oxide ongaphantsi kwesango. Le ntsimi yombane itsala ii-electron zamahhala kwi-P-region, zibangela ukuba ziqokelele ngaphantsi kwe-oxide layer, ngelixa zigxotha imingxuma kwi-P-region. Njengoko i-VGS isanda, amandla entsimi yombane ayanda kwaye ukuxinwa kwee-electron ezitsalayo zinyuka. Xa i-VGS ifikelela kwi-voltage ethile ye-threshold (VT), ukuxinwa kwee-electron zamahhala eziqokelelwe kummandla zikhulu ngokwaneleyo ukwenza ummandla omtsha we-N (N-channel), osebenza njengebhulorho edibanisa i-drain kunye nomthombo. Ngeli xesha, ukuba i-voltage ethile yokuqhuba (VDS) ikhona phakathi kwe-drain kunye nomthombo, i-ID yangoku ye-drain iqala ukuhamba.

III. Ukuqulunqwa kunye nokutshintshwa kwendlela yokuqhuba

Ukusekwa kwejelo lokuqhuba ngundoqo ekusebenzeni kweMOSFET. Xa i-VGS inkulu kune-VT, i-channel eqhubayo isungulwe kwaye i-ID yangoku ye-drain ichaphazeleka zombini i-VGS kunye ne-VDS.VGS ichaphazela i-ID ngokulawula ububanzi kunye nokuma komjelo wokuqhuba, ngelixa i-VDS ichaphazela i-ID ngqo njenge-voltage yokuqhuba. kubalulekile ukuba uqaphele ukuba ukuba itshaneli yokuqhuba ayisungulwa (oko kukuthi, i-VGS ingaphantsi kwe-VT), ngoko nangona i-VDS ikhona, i-ID yangoku ye-drain ayibonakali.

IV. Iimpawu zee-MOSFETs

I-impedance ephezulu:I-impedance yegalelo ye-MOSFET iphezulu kakhulu, isondele kwi-infinity, kuba kukho i-insulating layer phakathi kwesango kunye nommandla we-source-drain kunye nesango elingenamandla langoku.

Uthintelo lwemveliso ephantsi:Ii-MOSFET zizixhobo ezilawulwa yi-voltage apho i-source-drain current inokutshintsha khona nge-voltage yegalelo, ngoko ke i-impedance yabo yokuphuma incinci.

Ukuqukuqela rhoqo:Xa usebenza kwingingqi ye-saturation, umsinga we-MOSFET phantse awuchatshazelwa lutshintsho kumbane we-source-drain voltage, ebonelela ngokugqwesileyo ngokuqhubekayo.

Uzinzo oluhle lobushushu:Ii-MOSFET zineqondo lobushushu elibanzi lokusebenza ukusuka ku -55°C ukuya malunga +150°C.

V. Izicelo kunye nokuhlelwa

Ii-MOSFET zisetyenziswa ngokubanzi kwiisekethe zedijithali, iisekethe ze-analogue, iisekethe zamandla kunye nezinye iinkalo. Ngokohlobo lomsebenzi, ii-MOSFET zinokuhlelwa ngokweendidi zophuculo kunye nokuncipha; ngokohlobo lwesitishi sokuqhuba, zingahlelwa zibe yi-N-channel kunye ne-P-channel. Ezi ntlobo zahlukeneyo ze-MOSFET zineenzuzo zazo kwiimeko ezahlukeneyo zesicelo.

Isishwankathelo, umgaqo osebenzayo we-MOSFET kukulawula ukubunjwa kunye nokutshintshwa kwejelo lokuqhuba ngokusebenzisa umbane womthombo wesango, olawula ukuhamba kwamanzi akhoyo. I-impedance yayo ephezulu yegalelo, i-impedance ephantsi yemveliso, rhoqo ngoku kunye nokuzinza kweqondo lokushisa kwenza i-MOSFET ibe yinto ebalulekileyo kwiisekethe ze-elektroniki.