Xa uyila umbane otshintshayo okanye isekethe yokuqhuba i-motor drive usebenzisa ii-MOSFETs ezigqunyiweyo, uninzi lwabantu lujonga ukuchasana kwe-MOS, amandla ombane aphezulu, njl., ubuninzi bangoku, njl., kwaye baninzi abajonga ezi zinto kuphela. Iisekethe ezinjalo zinokusebenza, kodwa azikho zibalaseleyo kwaye azivumelekanga njengoyilo lwemveliso olusesikweni.
Oku kulandelayo sisishwankathelo esincinci seziseko zeMOSFET kunyeI-MOSFETiisekethe zomqhubi, endibhekisa kwinani lemithombo, hayi yonke imvelaphi. Kubandakanya ukuqaliswa kwee-MOSFETs, iimpawu, ukuqhuba kunye neesekethe zesicelo. Ukupakishwa kweentlobo ze-MOSFET kunye nesiphambuka I-MOSFET yiFET (enye i-JFET), inokuveliswa ibe luhlobo oluphuculweyo okanye lokuncipha, itshaneli ye-P okanye i-N-channel zizonke iindidi ezine, kodwa usetyenziso lwenene lwe-N-chaneli ye-MOSFET ephuculweyo kunye ne-P ephuculweyo. -Channel MOSFET, edla ngokubizwa ngokuba yi-NMOS, okanye i-PMOS ibhekisa kwezi ntlobo zimbini.
Ngokuphathelele kutheni ungasebenzisi uhlobo lokuncipha kwe-MOSFETs, akukhuthazwa ukuba ufike ezantsi kwayo. Kwezi ntlobo zimbini zophuculo lwe-MOSFETs, i-NMOS isetyenziswa kakhulu ngenxa yokunganyangeki kwayo kwaye kulula ukuyila. Ke ngoko ukutshintsha unikezelo lwamandla kunye nezicelo zokuqhuba iimoto, sebenzisa i-NMOS ngokubanzi. intshayelelo elandelayo, kodwa nangaphezuluNMOS-esekelwe.
Ii-MOSFETs zinamandla e-parasitic phakathi kwezikhonkwane ezintathu, ezingafunekiyo, kodwa ngenxa yokunciphisa inkqubo yokuvelisa. Ubukho be-parasitic capacitance kuyilo okanye ekukhethweni kwesekethe yokuqhuba ukuba ibe yinkathazo ethile, kodwa akukho ndlela yokuphepha, kwaye emva koko ichazwe ngokweenkcukacha. Njengoko unokubona kwiskimu se-MOSFET, kukho i-parasitic diode phakathi kombhobho kunye nomthombo.
Oku kubizwa ngokuba yi-diode yomzimba kwaye ibalulekile ekuqhubeni imithwalo ye-inductive efana neemoto. Ngendlela, i-diode yomzimba ikhona kuphela kumntuIi-MOSFETskwaye ngokuqhelekileyo ayikho ngaphakathi kwe-chip yesekethe edibeneyo.MOSFET ON CharacteristicsOn ithetha ukusebenza njengento yokutshintsha, elingana nokuvalwa kokutshintsha.
Iimpawu ze-NMOS, iiVgs ezinkulu kunexabiso elithile ziya kuqhuba, zilungele ukusetyenziswa kwimeko xa umthombo usekelwe (i-low-end drive), nje ngokuba i-voltage yesango ye-4V okanye i-10V. Iimpawu ze-PMOS, i-Vgs engaphantsi kwexabiso elithile iya kuqhuba, ilungele ukusetyenziswa kwimeko xa umthombo uxhunyiwe kwi-VCC (i-high-end drive). Nangona kunjalo, nangona i-PMOS inokusetyenziswa ngokulula njengomqhubi wesiphelo esiphezulu, i-NMOS ihlala isetyenziswa kubaqhubi abaphezulu ngenxa yokumelana okukhulu, ixabiso eliphezulu, kunye neentlobo ezimbalwa zokutshintsha.
Ukupakisha i-MOSFET yokutshintsha ilahleko yetyhubhu, nokuba yi-NMOS okanye i-PMOS, emva kokuqhubela phambili kukho ukuchasana okukhoyo, ukuze okwangoku kuya kudla amandla kule nkcaso, le nxalenye yamandla asetyenzisiweyo ibizwa ngokuba yilahleko yokuqhuba. Ukukhetha i-MOSFET enokumelana okuncinci kuya kunciphisa ilahleko yokuqhuba. Kule mihla, ukuxhathisa kumandla amancinane eMOSFET ngokuqhelekileyo kumalunga namashumi eemiliyoni, kwaye iimiliyoni ezimbalwa zikwakhona. IMOS akufunekanga igqitywe ngephanyazo xa iqhuba kwaye inqunyulwe. Umbane kumacala omabini eMOS unombane inkqubo yokunciphisa, kwaye ikhoyo ngoku ihamba ngayo inenkqubo yokunyuka.Ngeli xesha, ukulahlekelwa kwe-MOSFET kuyimveliso ye-voltage kunye ne-current, ebizwa ngokuba yi-switching loss. Ngokuqhelekileyo ukulahleka kokutshintsha kukhulu kakhulu kunokulahleka kwe-conduction, kwaye ngokukhawuleza ukuguqulwa kwamaxesha amaninzi, ilahleko enkulu. Imveliso ye-voltage kunye yangoku kwi-instant conduction inkulu kakhulu, ibangele ilahleko enkulu.
Ukunciphisa ixesha lokutshintsha kunciphisa ilahleko ekuqhubeni ngalunye; ukunciphisa i-frequency switching kunciphisa inani lokutshintsha ngexesha leyunithi nganye. Zombini ezi ndlela zinokunciphisa ilahleko yokutshintsha. Imveliso ye-voltage kunye neyangoku kwi-instant conduction inkulu, kwaye ilahleko ebangelwayo nayo inkulu. Ukunciphisa ixesha lokutshintsha kunokunciphisa ilahleko ekuqhubeni ngalunye; ukunciphisa i-frequency yokutshintsha kunokunciphisa inani lokutshintsha ngexesha leyunithi. Zombini ezi ndlela zinokunciphisa ilahleko yokutshintsha. Ukuqhuba xa kuthelekiswa ne-bipolar transistors, kukholelwa ngokubanzi ukuba akukho msinga ufunekayo ukuze uvule i-MOSFET epakishiweyo, okoko umbane we-GS ungaphezulu kwexabiso elithile. Oku kulula ukwenza, nangona kunjalo, sifuna isantya. Ubume be-MOSFET egqunyiweyo bunokubonwa kubukho be-parasitic capacitance phakathi kwe-GS, GD, kunye nokuqhuba kwe-MOSFET, enyanisweni, kukutshaja kunye nokukhutshwa kwesakhono. Ukuhlawula i-capacitor kufuna i-current, kuba ukutshaja i-capacitor ngokukhawuleza kunokubonwa njengesiphaluka esifutshane, ngoko ke umbane okhawulezayo uya kuba mkhulu. Into yokuqala ekufuneka uyiqaphele xa ukhetha/uyila umqhubi we-MOSFET bubungakanani bombane okhawulezayo okhawulezileyo onokubonelelwa.
Into yesibini ekufuneka uyiqaphele kukuba, isetyenziswa ngokubanzi kwi-NMOS yesiphelo esiphezulu, i-voltage yexesha lesango kufuneka ibe nkulu kunombane womthombo. I-high-end drive MOSFET conduction source voltage kunye ne-drain voltage (VCC) ngokufanayo, ngoko ke amandla ombane wesango kune-VCC 4 V okanye i-10 V. iisekethe zokunyusa. Abaqhubi abaninzi beemoto baneempompo ezidibeneyo zokuhlawula, kubalulekile ukuba uqaphele ukuba kufuneka ukhethe i-capacitance yangaphandle efanelekileyo, ukuze ufumane i-short-circuit current eyaneleyo ukuqhuba i-MOSFET. I-4V okanye i-10V isetyenziswa ngokuqhelekileyo kumbane we-on-state we-MOSFET, ngokuqinisekileyo, uyilo kufuneka lube nomda othile. Okukhona uphezulu amandla ombane, kokukhona isantya sombane sikhawulezayo kwaye kokukhona sisezantsi ukuxhathisa kwimeko. Kule mihla, kukho ii-MOSFET ezinombane omncinci kurhulumente osetyenziswa kwiindawo ezahlukeneyo, kodwa kwiinkqubo ze-elektroniki ze-12V, ngokubanzi i-4V kwi-state yanele.I-MOSFET drive circuit kunye nelahleko yayo.
Ixesha lokuposa: Apr-20-2024
