Zisebenza njani ii-MOSFETs?

1, I-MOSFETintshayelelo

Isifinyezo se-FieldEffect Transistor (FET)) isihloko MOSFET. ngenani elincinci labathwali lokuthatha inxaxheba ekuqhubeni ubushushu, eyaziwa ngokuba yi-multi-pole transistor. Yeyohlobo lwe-voltage mastering semi-superconductor indlela. Kukho ukuchasana kwemveliso kuphezulu (10 ^ 8 ~ 10 ^ 9Ω), ingxolo ephantsi, ukusetyenziswa kwamandla aphantsi, uluhlu lwe-static, kulula ukudibanisa, akukho nto yesibini yokuphazamiseka, umsebenzi we-inshurensi yolwandle kunye nezinye izibonelelo, ngoku zitshintshile. i-bipolar transistor kunye ne-transistor ye-junction yamandla yabadibanisi abanamandla.

 

2, iimpawu ze-MOSFET

I-1, i-MOSFET sisixhobo sokulawula amandla ombane, ngeVGS (isango lombane wombane wesango) i-ID yokulawula (drain DC);

2, I-MOSFET'simveliso DC pole incinci, ngoko ke ukuxhathisa imveliso mkhulu.

3, kukusetyenziswa kwenani elincinci labathwali ukuqhuba ubushushu, ngoko unomlinganiselo ongcono wokuzinza;

I-4, iqulethe indlela yokunciphisa i-coefficient yokunciphisa umbane incinci kune-triode iqulethe indlela yokunciphisa i-coefficient yokunciphisa;

I-5, isakhono sokuchasa ukukhanya kwe-MOSFET;

I-6, ngenxa yokungabikho komsebenzi ophosakeleyo we-oligon yokusabalalisa okubangelwa ngamasuntswana omsindo osasazekileyo, ngoko ke ingxolo iphantsi.

 

3, umgaqo womsebenzi we-MOSFET

I-MOSFET'sumgaqo wokusebenza kwisivakalisi esinye, ngu "drain - source phakathi kwe-ID equkuqela kwitshaneli yesango kunye netshaneli phakathi kwe-pn junction eyenziwe yi-bias engasemva ye-ID yesango lombane lombane", ukuchaneka, i-ID ihamba ngobubanzi. wendlela, oko kukuthi, indawo ye-channel cross-sectional, yinguqu kwi-bias ejikelezayo ye-pn junction, evelisa i-depletion layer Isizathu sokulawula ukwahluka okwandisiweyo. Kulwandle olungahluthiyo lwe-VGS=0, ekubeni ukwandiswa komgangatho wenguqu akukukhulu kakhulu, ngokongezwa kwemagnethi ye-VDS phakathi komthombo, ezinye ii-electron kumthombo wolwandle zitsalwa idreyini, oko kukuthi, kukho umsebenzi we-ID ye-DC ukusuka kumsele ukuya kumthombo. Umaleko ophakathi owandisiweyo ukusuka kwisango ukuya kwi-drain yenza umzimba wonke wetshaneli wenze uhlobo lokuthintela, i-ID epheleleyo. Biza le fomu i-pinch-off. Ukufanisa umaleko wenguqu kumjelo wesithintelo sonke, kunokuba amandla e-DC anqunyulwe.

 

Ngenxa yokuba akukho ntshukumo yasimahla yee-electron kunye nemingxuma kwinqanaba lenguqu, iphantse ibe neendawo zokukhusela kwifomu efanelekileyo, kwaye kunzima ukuba umsinga oqhelekileyo uhambe. Kodwa ke intsimi yombane phakathi idreyini - umthombo, eneneni, idreyini inguqu ezimbini umaleko kunye nesango isibonda kufutshane inxalenye esezantsi, ngenxa drift intsimi yombane itsala i-electron ngesantya esiphezulu ngokusebenzisa umaleko inguqu. Ubunzulu bomhlaba wokukhukuliseka buphantse buqhubeke buvelisa ukugcwala kwendawo ye-ID.

 

Isekethe isebenzisa indibaniselwano ye-P-channel MOSFET ephuculweyo kunye ne-N-channel MOSFET ephuculweyo. Xa igalelo liphantsi, i-P-channel MOSFET iqhuba kwaye imveliso iqhagamshelwe kwi-terminal eqinisekileyo yonikezelo lwamandla. Xa igalelo liphezulu, i-N-channel MOSFET iqhuba kwaye imveliso iqhagamshelwe kumhlaba wokubonelela ngombane. Kule sekethe, i-P-channel MOSFET kunye ne-N-channel MOSFET zihlala zisebenza kumazwe achaseneyo, igalelo lesigaba kunye neziphumo zitshintshwa.