Inkcazo yepharamitha nganye yamandla eMOSFETs

I-VDSS Maximum Drain-Source Voltage

Ngokufutshane komthombo wesango, i-drain-source voltage rating (VDSS) yi-voltage ephezulu enokuthi isetyenziswe kwi-drain-source ngaphandle kokuphuka kwe-avalanche. Ngokuxhomekeke kwiqondo lobushushu, owona mbane wokuqhekeka kwe-avalanche unokuba ngaphantsi kune-VDSS elinganisiweyo. Ngenkcazelo eneenkcukacha ye-V(BR)DSS, bona i-Electrostatic

Ukufumana inkcazo eneenkcukacha ye-V(BR)DSS, jonga iiMpawu zoMbane.

I-VGS Maximum Gate Source Voltage

Umlinganiselo we-voltage ye-VGS ngowona mbane uphezulu onokuthi usetyenziswe phakathi kweepali zomthombo wesango. Eyona njongo iphambili yokuseta lo mgangatho wombane kukuthintela umonakalo kwi-oksidi yesango ebangelwa kumbane ogqithisileyo. I-voltage yokwenyani i-oxide yesango inokumelana nayo iphezulu kakhulu kune-voltage elinganisiweyo, kodwa iya kuhluka kunye nenkqubo yokuvelisa.

I-oxide yesango yokwenyani inokumelana nokuphakama okuphezulu kakhulu kunombane olinganisiweyo, kodwa oku kuya kuhluka kunye nenkqubo yokuvelisa, ngoko ke ukugcina i-VGS ngaphakathi kwe-voltage elinganisiweyo kuya kuqinisekisa ukuthembeka kwesicelo.

I-ID - Ukuvuza ngokuqhubekayo ngoku

I-ID ichazwa njengobuninzi obuvumelekileyo obuqhubekayo be-DC ngoku kwiqondo eliphezulu elilinganiselweyo le-junction, i-TJ (max), kunye ne-tube surface yeqondo lokushisa kwe-25 ° C okanye ngaphezulu. Le parameter ngumsebenzi wokunganyangeki kwe-thermal phakathi kwesiphambuka kunye necala, i-RθJC, kunye nobushushu bemeko:

Ilahleko zokutshintsha azibandakanyi kwi-ID kwaye kunzima ukugcina ubushushu bombhobho we-tube kwi-25 ° C (Tcase) ukusetyenziswa okusebenzayo. Ngoko ke, ukutshintshwa kwangoku kwizicelo zokutshintsha nzima ngokuqhelekileyo kungaphantsi kwesiqingatha sokulinganisa kwe-ID @ TC = 25 ° C, ngokuqhelekileyo kuluhlu lwe-1/3 ukuya kwi-1/4. ehambelanayo.

Ukongezelela, i-ID kwiqondo lokushisa elithile linokuqikelelwa ukuba i-JA yokumelana ne-thermal isetyenzisiweyo isetyenzisiweyo, elixabiso lokwenene.

IDM - Impulse Drain yangoku

Le parameter ibonisa ubungakanani be-pulsed yangoku isixhobo esinokuphatha, ephezulu kakhulu kune-DC eqhubekayo yangoku. Injongo yokuchaza i-IDM yile: ummandla we-ohmic womgca. Kwisango elithile lombane lomthombo, iI-MOSFETiqhuba ngowona mandla okhoyo ngoku wedrain ephezulu

yangoku. Njengoko kubonisiwe kumzobo, kwi-voltage yomthombo wesango elinikeziweyo, ukuba indawo yokusebenza ifumaneka kwingingqi yomgca, ukunyuka kwe-drain current kuphakamisa i-drain-source voltage, eyandisa ilahleko zokuqhuba. Ukusebenza ixesha elide kumandla aphezulu kuya kubangela ukusilela kwesixhobo. Ngesi sizathu

Ke ngoko, i-IDM ebizwa ngokuba yi-IDM idinga ukusetwa ngaphantsi kommandla kwiindlela zombane zombane zesango. I-cutoff point yendawo ikwi-intersection ye-Vgs kunye ne-curve.

Ke ngoko, umda woxinaniso ophezulu wangoku kufuneka umiselwe ukukhusela i-chip ekubeni ishushu kakhulu kwaye itshise. Oku kubaluleke kakhulu ukuthintela ukuhamba okugqithileyo ngoku kukhokelela kwiphakheji, kuba kwezinye iimeko "unxibelelwano olubuthathaka" kwi-chip yonke aluyiyo i-chip, kodwa iphakheji iyakhokela.

Ukuqwalasela imida yeempembelelo ze-thermal kwi-IDM, ukunyuka kweqondo lokushisa kuxhomekeke kububanzi be-pulse, ixesha lokuphumla phakathi kwee-pulses, ukutshatyalaliswa kobushushu, i-RDS (kwi), kunye ne-waveform kunye ne-amplitude ye-pulse current. Ukwanelisa nje ukuba i-pulse current ayidluli kumda we-IDM akuqinisekisi ukuba ubushushu besiphambuka.

ayigqithi kwixabiso eliphezulu elivumelekileyo. Ukushisa kwe-junction phantsi kwe-pulsed current kunokuqikelelwa ngokubhekiselele kwingxoxo yokuchasana kwe-thermal yesikhashana kwi-Thermal kunye ne-Mechanical Properties.

I-PD - Itotali evumelekileyo yokuchithwa kwamandla oMbane

I-Total Allowable Channel Power Dissipation ilinganisa ukutshatyalaliswa kwamandla aphezulu anokuchithwa sisixhobo kwaye kunokubonakaliswa njengomsebenzi wokushisa okukhulu kwe-junction kunye nokuchasana kwe-thermal kwimeko yokushisa kwe-25 ° C.

TJ, TSTG -Operating kunye noGcino kwi-Ambient Temperature Range

Ezi parameters zimbini zilungelelanisa uluhlu lobushushu besiphambuka esivunyelwe yindawo yokusebenza kunye nokugcinwa kwesixhobo. Olu luhlu lobushushu lusetelwe ukuhlangabezana nobomi obuncinci bokusebenza besixhobo. Ukuqinisekisa ukuba isixhobo sisebenza ngaphakathi kolu luhlu lobushushu luya kwandisa kakhulu ubomi baso bokusebenza.

I-EAS-Single Pulse Avalanche Breakdown Energy

 

Ukuba i-voltage overshoot (ngokuqhelekileyo ngenxa yokuvuza kwangoku kunye ne-inductance elahlekileyo) ayigqithisi i-voltage ye-avalanche, isixhobo asiyi kudlula ukuphuka kwe-avalanche kwaye ngoko ayifuni ukukwazi ukutshabalalisa ukuphuka kwe-avalanche. Amandla okuqhekeka kwe-avalanche alungelelanisa ukudubula okudlula okwethutyana esinokuthi isixhobo sinyamezele.

Amandla okuqhekeka kweAvalanche achaza ixabiso elikhuselekileyo lamandla ombane wokudutyulwa okwethutyana isixhobo esinokunyamezela, kwaye ixhomekeke kubungakanani bamandla ekufuneka ichithwe ukuze kwenzeke ukuqhekeka kwe-avalanche.

Isixhobo esichaza ukalisho lwe-avalanche yokuchithwa kwamandla ngokuqhelekileyo ikwachaza ukalisho lwe-EAS, olufana ngentsingiselo nokalisho lwe-UIS, kwaye ichaza ukuba angakanani na umva amandla okuqhekeka kwe-avalanche esinokuwafunxa ngokukhuselekileyo isixhobo.

L lixabiso le-inductance kunye ne-iD yincopho yangoku ehambayo kwi-inductor, eguqulwa ngokukhawuleza ukuba ikhuphe okwangoku kwisixhobo sokulinganisa. Umbane oveliswe kwi-inductor udlula umbane wokuqhawulwa kwe-MOSFET kwaye uya kukhokelela ekuqhawukeni kwe-avalanche. Xa ukuqhekeka kwe-avalanche kwenzeka, yangoku kwi-inductor iya kuhamba ngesixhobo se-MOSFET nangona iI-MOSFETicimile. Amandla agcinwe kwi-inductor afana namandla agcinwe kwi-inductor elahlekileyo kwaye achithwa yi-MOSFET.

Xa ii-MOSFETs ziqhagamshelwe ngokunxuseneyo, ii-voltage zokuqhekeka azifane zifane phakathi kwezixhobo. Into eqhele ukwenzeka kukuba isixhobo esinye sesokuqala ukufumana ukuphuka kwe-avalanche kunye nayo yonke imisinga yokuqhekeka kwe-avalanche elandelayo (amandla) aqukuqela kweso sixhobo.

INDLEBE-Amandla okuphinda iAvalanche

Amandla okuphindaphinda i-avalanche iye yaba "ngumgangatho weshishini", kodwa ngaphandle kokubeka i-frequency, enye ilahleko kunye nobungakanani bokupholisa, le parameter ayinayo intsingiselo. Imeko yokutshatyalaliswa kobushushu (ukupholisa) ihlala ilawula amandla aphindaphindayo e-avalanche. Kukwanzima ukuqikelela inqanaba lamandla aveliswa kukuqhekeka kwe-avalanche.

Kukwanzima ukuqikelela inqanaba lamandla aveliswa kukuqhekeka kwe-avalanche.

Intsingiselo yokwenyani yokukala kwe-EAR kukulinganisa amandla aphindaphindwayo okuqhekeka kwe-avalanche esinokumelana nayo isixhobo. Le nkcazelo icingela ukuba akukho mda kuphindaphindo ukwenzela ukuba isixhobo singashushu ngokugqithisileyo, nto leyo eyinyani kuso nasiphi na isixhobo apho ukuqhawuka kwe-avalanche kunokwenzeka.

Kungumbono olungileyo ukulinganisa ubushushu besixhobo esisebenzayo okanye isinki yobushushu ukubona ukuba isixhobo se-MOSFET sishushu kakhulu na ngexesha loqinisekiso loyilo lwesixhobo, ngakumbi kwizixhobo apho kunokwenzeka ukuqhawuka kwe-avalanche.

IAR - Ukuqhekeka kweAvalanche yangoku

Kwezinye izixhobo, ukuthambekela komphetho oseti yangoku kwitshiphu ngexesha lokuqhekeka kwe-avalanche kufuna ukuba i-Avalanche yangoku i-IAR ibekelwe umda. Ngale ndlela, i-avalanche current iba "kushicilelo oluhle" lwe-avalanche breakdown energy specification; ityhila isakhono sokwenyani sesixhobo.

Inxalenye II Ukumiselwa koMbane omileyo

I-V(BR)DSS: I-Voltage ye-Drain-Source Breakdown Voltage (i-Destruction Voltage)

I-V(BR)DSS (ngamanye amaxesha ibizwa ngokuba yi-VBDSS) ngamandla ombane wedrain-source apho umsinga ohamba ngomjelo ufikelela kwixabiso elithile kubushushu obuthile kunye nomthombo wesango umfutshane. I-drain-source voltage kule meko yi-avalanche breakdown voltage.

I-V(BR)DSS yi-coefficient yobushushu obufanelekileyo, kwaye kumaqondo aphantsi i-V(BR)DSS ingaphantsi komlinganiselo ophezulu we-drain-source voltage kwi-25 °C. Ku--50°C, i-V(BR)DSS ingaphantsi kowona mlinganiselo mkhulu wombane womthombo wokuhambisa amanzi ku--50°C. Ku--50°C, i-V(BR)DSS imalunga nama-90% obona bukhulu bomgangatho wamandla ombane ophuma kumthombo wokuhambisa amanzi kuma-25°C.

VGS(th), VGS(cimile): I-Threshold voltage

I-VGS(th) yivoltheji apho i-voltage yomthombo wesango elongeziweyo inokubangela ukuba umjelo uqalise ukuba nowangoku, okanye umsinga unyamalale xa i-MOSFET icinyiwe, kunye neemeko zovavanyo (umbhobho wangoku, umbane womthombo wotsalo, udityaniso. ubushushu) nazo zichaziwe. Ngokuqhelekileyo, zonke izixhobo zesango le-MOS zihlukile

i-threshold voltages iya kwahluka. Ngoko ke, uluhlu lotshintsho lwe VGS(th) lucacisiwe.VGS(th) ngumlinganiso ombi wobushushu, xa ubushushu buphakama,I-MOSFETiya kuvulwa kumbane wesango elisezantsi ngokwentelekiso.

I-RDS(ivuliwe): Ukuxhathisa

I-RDS(on) kukuxhathisa komthombo we-drain-source elinganiswa kumjelo othile wangoku (udla ngokuba sisiqingatha se-ID yangoku), amandla ombane omthombo wesango, kunye nama-25°C. I-RDS(on) luxhathiso lomthombo wedreyini olulinganiswa kumjelo othile wangoku (udla ngokuba sisiqingatha se-ID yangoku), amandla ombane omthombo wesango, kunye nama-25°C.

I-IDSS: isango lokutsalwa kwamandla ombane elinguziro langoku

I-IDSS ngumsinga ovuzayo phakathi komsele kunye nomthombo wombane okhethekileyo womthombo wombane xa amandla ombane omthombo wesango unguziro. Ekubeni ukuvuza kwangoku kunyuka ngeqondo lobushushu, i-IDSS icaciswa kuwo omabini amagumbi kunye namaqondo obushushu aphezulu. Ukutshatyalaliswa kwamandla ngenxa yokuvuza kwangoku kunokubalwa ngokuphindaphinda i-IDSS ngombane phakathi kwemithombo yokuhambisa amanzi, edla ngokungakhathali.

IGSS - Umthombo weSango lokuvuza ngoku

I-IGSS kukuvuza kwangoku okuhamba ngesango kumthombo wombane othile wesango.

Icandelo III IiMpawu zoMbane ezinamandla

Ciss : Ukufaka amandla

I-capacitance phakathi kwesango kunye nomthombo, ulinganiswe ngomqondiso we-AC ngokunciphisa i-drain kumthombo, i-input capacitance; I-Ciss yenziwe ngokudibanisa i-capacitance ye-drain yesango, i-Cgd, kunye ne-capacitance yomthombo wesango, i-Cgs, ngokuhambelana, okanye i-Ciss = Cgs + Cgd. Isixhobo sivuliwe xa i-input capacitance ihlawuliswa kwi-voltage ye-threshold, kwaye ivaliwe xa ikhutshwe kwixabiso elithile. Ngoko ke, isekethe yomqhubi kunye neCiss inefuthe elithe ngqo kwi-turn-on kunye nokulibaziseka kokucima isixhobo.

Coss : Umthamo wemveliso

I-output capacitance yi-capacitance phakathi kwe-drain kunye nomthombo olinganiswe ngomqondiso we-AC xa umthombo wesango ufinyeziwe, i-Coss yenziwe ngokuhambelana ne-drain-source capacitance Cds kunye ne-gate-drain capacitance Cgd, okanye i-Coss = Cds + Cgd. Kwizicelo zokutshintsha okuthambileyo, i-Coss ibaluleke kakhulu kuba inokubangela i-resonance kwisekethe.

Crss : Ukubuyisela umva iSakhono sokuTshintshela

I-Capacitance elinganiswe phakathi kwe-drain kunye nesango kunye nomthombo osekelwe yi-reverse transfer capacitance. I-reverse transfer capacitance ilingana nesango lokukhupha i-capacitance, i-Cres = i-Cgd, kwaye idla ngokubizwa ngokuba yi-Miller capacitance, enye yezona zinto zibalulekileyo kwiiparameters zokunyuka nokuwa kwexesha lokutshintsha.

Yiparameter ebalulekileyo yokutshintsha amaxesha okunyuka kunye nokuwa, kwaye ichaphazela ixesha lokulibaziseka kokucima. I-capacitance iyancipha njengoko i-voltage ye-drain inyuka, ngokukodwa i-capacitance ye-output kunye ne-reverse transfer capacitance.

Qgs, Qgd, kunye neQg: Intlawulo yeSango

Ixabiso lentlawulo yesango libonisa intlawulo egcinwe kwi-capacitor phakathi kwee-terminals. Ekubeni umrhumo kwi-capacitor utshintsha kunye ne-voltage ngexesha lokutshintsha, umphumo wentlawulo yesango udla ngokuqwalaselwa xa uyila iisekethe zomqhubi wesango.

I-Qgs ​​yintlawulo esuka kwi-0 ukuya kwindawo yokuqala yokuguquguquka, i-Qgd yinxenye ukusuka kwindawo yokuqala ukuya kweyesibini i-inflection point (ekwabizwa ngokuba yi-"Miller") intlawulo), kwaye i-Qg yinxenye ukusuka kwi-0 ukuya kwindawo apho i-VGS ilingana ne-drive ethile. I-Voltage.

Utshintsho kwi-voltage yokuvuza yangoku kunye nokuvuza komthombo kunempembelelo encinci kwixabiso lentlawulo yesango, kwaye intlawulo yesango ayitshintshi ngeqondo lokushisa. Iimeko zovavanyo zichaziwe. Igrafu yentlawulo yesango ibonisiwe kwiphepha ledatha, kubandakanywa iigophe ezihambelanayo zentlawulo yesango lokuvuza okusisigxina kwangoku kunye nokwahlukana komthombo wombane wokuvuza.

Iingcango ezihambelanayo zentlawulo yesango eziguquguqukayo zomjelo osisigxina kunye nombane womthombo ohlukeneyo wokuhambisa amanzi zibandakanyiwe kwiinkcukacha zedatha. Kwigrafu, i-voltage ye-plateau VGS(pl) yonyuka kancinane ngokunyuka kwangoku (kwaye iyancipha ngokuhla kwangoku). Umbane weplateau ukwalingana nombane we-threshold, ngoko ke umbane owahlukileyo wombane uya kuvelisa i-voltage eyahlukileyo.

I-Voltage.

Lo mzobo ulandelayo uchazwe ngakumbi kwaye usetyenziswa:

td(on): ixesha lokulibaziseka ngexesha

Ixesha lokulibaziseka kwexesha lixesha apho i-voltage yomthombo wesango iphakama ukuya kwi-10% ye-voltage drive yesango ukuya xa ukuvuza kwangoku kunyuka ukuya kwi-10% yangoku echaziweyo.

td(off) : Ixesha lokulibaziseka livaliwe

Ixesha lokulibaziseka kokucima lixesha eligqithisiweyo ukusuka xa i-voltage yomthombo wesango ihla ukuya kwi-90% ye-voltage drive yesango ukuya xa ukuvuza kwangoku kuhla ukuya kwi-90% yangoku echaziweyo. Oku kubonisa ukulibaziseka okufunyenwe phambi kokuba umsinga udluliselwe kumthwalo.

tr : Ixesha lokunyuka

Ixesha lokunyuka lixesha elithathayo ukuba i-drain current inyuke ukusuka kwi-10% ukuya kwi-90%.

tf : Ixesha lokuwa

Ixesha lokuwa lixesha elithathayo ukuba i-drain current iwele ukusuka kwi-90% ukuya kwi-10%.