Ngaba uyazazi iipali ezintathu ze-MOSFET?

I-MOSFET (i-Metal-Oxide-Semiconductor Field-Effect Transistor) ineepali ezintathu ezi:

Isango:G, isango le-MOSFET lilingana nesiseko se-bipolar transistor kwaye lisetyenziselwa ukulawula ukuqhutywa kunye nokunqunyulwa kwe-MOSFET. Kwii-MOSFET, i-voltage yesango (i-Vgs) inquma ukuba i-channel conductive yenziwe phakathi komthombo kunye ne-drain, kunye nobubanzi kunye nokuhamba kwe-channel conductive. Isango lenziwe ngezinto ezifana nesinyithi, i-polysilicon, njl., kwaye ijikelezwe ngoluhlu lwe-insulating (ngokuqhelekileyo i-silicon dioxide) ukukhusela i-current ekugelezeni ngqo okanye ngaphandle kwesango.

Umthombo:S, umthombo we-MOSFET ulingana ne-emitter ye-bipolar transistor kwaye kulapho uhamba khona ngoku. Kwii-MOSFET ze-N-channel, umthombo udla ngokuqhagamshelwa kwi-terminal engalunganga (okanye umhlaba) wobonelelo lwamandla, ngelixa kwii-MOSFET ze-P-channel, umthombo uqhagamshelwe kwi-terminal eqinisekileyo yobonelelo lwamandla. Umthombo ungomnye wamacandelo abalulekileyo awenza umjelo oqhubayo, othumela i-electron (N-channel) okanye imingxuma (P-channel) kwi-drain xa isango lombane liphezulu ngokwaneleyo.

Khupha amanzi:D, idrain ye-MOSFET ilingana nomqokeleli we-bipolar transistor kwaye kulapho i-current ingena khona. Idreyini idla ngokudityaniswa kumthwalo kwaye isebenza njengemveliso yangoku kwisekethe. Kwi-MOSFET, idreyini yenye isiphelo somjelo wokuqhuba, kwaye xa i-voltage yesango ilawula ukubunjwa komjelo wokuqhuba phakathi komthombo kunye ne-drain, umsinga unokuhamba ukusuka kumthombo ngokusebenzisa umjelo wokuqhuba ukuya kwi-drain.

Ngamafutshane, isango le-MOSFET lisetyenziselwa ukulawula nokuvula nokuvala, umthombo kulapho umsinga uphuma khona, kwaye umsele kulapho uqukuqela khona umsinga. Zidibene, ezi pali zintathu zimisela imeko yokusebenza kunye nokusebenza kweMOSFET. .