I-MOSFET, eyaziwa ngokuba yi-Metal-Oxide-Semiconductor Field-Effect Transistor, sisixhobo sombane esisetyenziswa ngokubanzi esohlobo lwe-Field-Effect Transistor (FET).i-MOSFETiqukethe isango lesinyithi, i-oxide insulating layer (ngokuqhelekileyo i-Silicon Dioxide SiO₂) kunye ne-semiconductor layer (ngokuqhelekileyo i-silicon Si). Umgaqo wokusebenza kukulawula i-voltage yesango ukutshintsha intsimi yombane phezu komhlaba okanye ngaphakathi kwe-semiconductor, ngaloo ndlela ulawula okwangoku phakathi komthombo kunye ne-drain.
Ii-MOSFETsingahlelwa ngokweendidi ezimbini eziphambili: i-N-channelIi-MOSFETs(NMOS) kunye ne-P-channelIi-MOSFETs(PMOS). Kwi-NMOS, xa i-voltage yesango ilungile ngokubhekiselele kumthombo, i-n-type conducting channels zenziwa kumphezulu we-semiconductor, okuvumela ukuba ii-electron zihambe ukusuka kumthombo ukuya kwi-drain. Kwi-PMOS, xa i-voltage yesango ingalunganga ngokubhekiselele kumthombo, i-p-type conducting channels zenziwa kumphezulu we-semiconductor, okuvumela imingxuma ukuba ihambe ukusuka kumthombo ukuya kwi-drain.
Ii-MOSFETszineenzuzo ezininzi, ezifana igalelo eliphezulu impedance, ingxolo ephantsi, ukusetyenziswa kwamandla aphantsi, kunye lula ukudibanisa, ngoko ke zisetyenziswa ngokubanzi kwiisekethe analog, iisekethe digital, ulawulo amandla, amandla ombane, iinkqubo zonxibelelwano, kunye nezinye iinkalo. Kwiisekethe ezidibeneyo,Ii-MOSFETsziiyunithi ezisisiseko ezenza i-CMOS (i-Complementary Metal Oxide Semiconductor) iisekethe zengqiqo. Iisekethe ze-CMOS zidibanisa iingenelo ze-NMOS kunye ne-PMOS, kwaye zibonakaliswa ngokusetyenziswa kwamandla aphantsi, isantya esiphezulu kunye nokudibanisa okuphezulu.
Ukwengeza,Ii-MOSFETszingahlelwa zibe kudidi lophuculo kunye nodidi lonciphiso ngokungqinelana nokuba imijelo yazo eqhubayo yenziwe kwangaphambili. Uhlobo lophuculoI-MOSFETkwi-voltage yesango ngu-zero xa umjelo ungaqhubeki, kufuneka usebenzise i-voltage ethile yesango ukwenza i-channel conductive; ngelixa uhlobo lokunciphisaI-MOSFETkwi-voltage yesango i-zero xa umjelo sele uqhubekile, i-voltage yesango isetyenziselwa ukulawula ukuhanjiswa kweshaneli.
Isishwankathelo,I-MOSFETi-transistor yempembelelo yentsimi esekelwe kwisakhiwo se-metal oxide semiconductor, elawula okwangoku phakathi komthombo kunye ne-drain ngokulawula i-voltage yesango, kwaye inoluhlu olubanzi lwezicelo kunye nexabiso elibalulekileyo lobugcisa.
Ixesha lokuposa: Sep-12-2024
