IGBT (I-Insulated Gate Bipolar Transistor) kunye ne-MOSFET (i-Metal-Oxide-Semiconductor Field-Effect Transistor) zizixhobo ezimbini eziqhelekileyo ze-semiconductor zamandla ezisetyenziswa ngokubanzi kumbane wamandla. Ngelixa zombini ziyinxalenye ebalulekileyo kwizicelo ezahlukeneyo, ziyahluka kakhulu kwimiba emininzi. Apha ngezantsi kukho umahluko ophambili phakathi kwe-IGBT kunye ne-MOSFET:
1. UmGaqo wokuSebenza
- I-IGBT: I-IGBT idibanisa iimpawu zombini i-BJT (i-Bipolar Junction Transistor) kunye ne-MOSFET, iyenza i-hybrid device. Ilawula isiseko se-BJT ngokusebenzisa amandla ombane esango le-MOSFET, ethi yona ilawule ukuqhuba kunye nokunqunyulwa kwe-BJT. Nangona iinkqubo zokuqhuba kunye nokunqunyulwa kwe-IGBT zintsonkothile, zinelahleko yombane ophantsi kunye nokunyamezela kwamandla ombane aphezulu.
- I-MOSFET: I-MOSFET yi-transistor ye-field-effect elawula okwangoku kwi-semiconductor ngokusebenzisa i-voltage yesango. Xa i-voltage yesango idlula i-voltage yomthombo, ifom ye-conductive layer, evumela ukuba i-current ihambe. Ngokwahlukileyo, xa i-voltage yesango ingaphantsi komda, i-conductive layer iyanyamalala, kwaye okwangoku ayikwazi ukuhamba. Ukusebenza kwe-MOSFET kulula, kunye nesantya sokutshintsha ngokukhawuleza.
2. IiNdawo zokuSebenza
- I-IGBT: Ngenxa yokunyamezela kwamandla ombane aphezulu, ilahleko yombane ophantsi wokuqhuba, kunye nokusebenza kokutshintsha ngokukhawuleza, i-IGBT ifaneleke ngakumbi kumandla aphezulu, izicelo zelahleko ephantsi ezifana ne-inverters, abaqhubi beemoto, oomatshini bokuwelda, kunye nonikezelo lwamandla olungaphazamisekiyo (UPS) . Kwezi zicelo, i-IGBT ilawula ngokufanelekileyo i-high-voltage kunye ne-high-current switching operations.
-I-MOSFET: I-MOSFET, ngempendulo yayo ekhawulezayo, ukumelana nokufakwa okuphezulu, ukusebenza ngokuzinzile kokutshintsha, kunye neendleko eziphantsi, isetyenziswa kakhulu kumandla aphantsi, usetyenziso olukhawulezayo olufana nombane wemowudi yokutshintsha, ukukhanya, iiamplifiers zeaudio, kunye neesekethe ezinengqondo. . I-MOSFET iqhuba kakuhle kakhulu kumandla aphantsi kunye ne-low-voltage applications.
3. Iimpawu zoMsebenzi
- I-IGBT: I-IGBT igqwesa kwi-high-voltage, izicelo eziphezulu zangoku ngenxa yokukwazi ukuphatha amandla abalulekileyo kunye nokulahlekelwa kwe-conduction ephantsi, kodwa inesantya esincinci sokutshintsha xa kuthelekiswa ne-MOSFETs.
-I-MOSFET: Ii-MOSFETs ziphawulwa ngesantya esikhawulezayo sokutshintsha, ukusebenza okuphezulu kwi-low-voltage applications, kunye nelahleko yamandla esezantsi kumaza okutshintsha okuphezulu.
4. Ukutshintshelana
I-IGBT kunye ne-MOSFET ziyilelwe kwaye zisetyenziselwa iinjongo ezahlukeneyo kwaye azikwazi kutshintshwa. Ukukhetha ukuba sesiphi isixhobo esiza kusisebenzisa kuxhomekeke kusetyenziso oluthile, iimfuno zokusebenza, kunye noqwalaselo lweendleko.
Ukuqukumbela
I-IGBT kunye ne-MOSFET zahluke kakhulu ngokwemigaqo yokusebenza, iindawo zokusetyenziswa, kunye neempawu zokusebenza. Ukuqonda lo mahluko kunceda ekukhetheni isixhobo esifanelekileyo kuyilo lwe-elektroniki yamandla, ukuqinisekisa ukusebenza okugqwesileyo kunye nokuphumelela kweendleko.
Ixesha lokuposa: Sep-21-2024
