Ubusazi malunga nokuvela kwe-MOSFET?

I. Iingcamango zangaphambili kunye nophononongo

Uluvo luyacetywa:Ukuveliswa kwe-MOSFET kunokulandwa emva ukuya kuthi ga kwii-1830s, xa ingqikelelo ye-transistor yempembelelo yentsimi yaziswa yi-Lilienfeld yaseJamani. Nangona kunjalo, iinzame ngeli xesha azizange ziphumelele ekufezekiseni i-MOSFET ebonakalayo.

Uphononongo lokuqala:Emva koko, iiLebhu zeBell zeShaw Teki (iShockley) kunye nabanye baye bazama ukufunda ukuveliswa kweetyhubhu zempembelelo yentsimi, kodwa okufanayo kwahluleka ukuphumelela. Nangona kunjalo, uphando lwabo lwabeka isiseko sophuhliso lwamva lwe-MOSFET.

II. Ukuzalwa kunye nophuhliso lokuqala lwe-MOSFETs

Ugqatso olungundoqo:Kwi-1960, uKahng no-Atalla baqulunqa ngengozi i-MOS ye-transistor ye-field effect (i-MOS transistor ngokufutshane) kwinkqubo yokuphucula ukusebenza kwee-bipolar transistors kunye ne-silicon dioxide (SiO2). Oku kuqanjwa kuphawule ukungena ngokusesikweni kwee-MOSFET kushishino lokwenziwa kwesekethe edibeneyo.

Ukwandiswa kokuSebenza:Ngophuhliso lwetekhnoloji yenkqubo ye-semiconductor, ukusebenza kwee-MOSFET kuyaqhubeka ukuphucuka. Ngokomzekelo, i-voltage yokusebenza ye-high-voltage yamandla e-MOS inokufikelela kwi-1000V, ixabiso lokumelana ne-MOS ephantsi-i-resistance MOS kuphela i-1 ohm, kwaye i-frequency yokusebenza isuka kwi-DC ukuya kwii-megahertz ezininzi.

III. Ukusetyenziswa ngokubanzi kwee-MOSFETs kunye nokuveliswa kwezinto ezintsha zobuchwepheshe

Isetyenziswa kakhulu:Ii-MOSFET zisetyenziswa ngokubanzi kwizixhobo zombane ezahlukeneyo, ezinje ngemicroprocessors, iinkumbulo, iisekethi ezinengqondo, njl.njl., ngenxa yokusebenza kwazo okugqwesileyo. Kwizixhobo zombane zala maxesha, iiMOSFET yenye yezinto eziyimfuneko.

 

Utshintsho lwetekhnoloji:Ukuze kuhlangatyezwane neemfuno zamaxesha okusebenza aphezulu kunye namanqanaba aphezulu ombane, i-IR iphuhlise amandla okuqala eMOSFET. emva koko, iintlobo ezininzi ezitsha zezixhobo zamandla ziye zaziswa, ezifana ne-IGBTs, GTOs, IPMs, njl., kwaye ziye zasetyenziswa ngokubanzi kwiindawo ezinxulumeneyo.

Ukuveliswa kwezinto ezintsha:Ngokuhambela phambili kobuchwepheshe, kujongwa izixhobo ezitsha zokwenziwa kweeMOSFET; umzekelo, izinto ze-silicon carbide (SiC) ziqala ukufumana ingqwalasela kunye nophando ngenxa yeempawu zabo eziphezulu zomzimba.Izixhobo ze-SiC zine-conductivity ephezulu ye-thermal kunye ne-bandwidth enqatshelwe xa kuthelekiswa nezixhobo eziqhelekileyo ze-Si, ezimisela iipropati zabo ezintle ezifana noxinzelelo oluphezulu lwangoku, oluphezulu. ukomelela kwentsimi, kunye nobushushu obuphezulu bokusebenza.

Okwesine, itekhnoloji ye-MOSFET ephambili kunye nesikhokelo sophuhliso

Ii-Dual Gate Transistors:Iindlela ezahlukeneyo buyazanywa ukwenza ii-dual gate transistors ukuphucula ngakumbi ukusebenza kwee-MOSFETs. Amasango amabini e-MOS transistors anokuncipha okungcono xa kuthelekiswa nesango elinye, kodwa ukushwabana kwabo kusenomda.

 

Isiphumo esifutshane somjelo:Isikhokelo sophuhliso esibalulekileyo seeMOSFET kukusombulula ingxaki yesiphumo setshaneli emfutshane. Isiphumo somjelo omfutshane siya kunciphisa ukuphuculwa okuqhubekayo kokusebenza kwesixhobo, ngoko ke kuyimfuneko ukunqoba le ngxaki ngokunciphisa ubunzulu besiphambuka somthombo kunye nemimandla yokukhupha, kunye nokutshintsha indawo yomthombo kunye ne-drain junctions ye-PN nge-metal-semiconductor contacts.