I-MOSFET lelinye lawona macandelo asisiseko kwishishini le-semiconductor.Kwiisekethe ze-elektroniki, i-MOSFET isetyenziswa ngokubanzi kwiisekethe zeamplifier zamandla okanye ukutshintshwa kweesekethe zobonelelo lwamandla kwaye isetyenziswa ngokubanzi.Ngezantsi,OLUKEYiya kukunika inkcazo eneenkcukacha zomgaqo wokusebenza we-MOSFET kwaye uhlalutye ubume bangaphakathi be-MOSFET.
Yintoni iI-MOSFET
I-MOSFET, i-Metal Oxide Semiconductor yeFayile yeFayile Transistor (MOSFET).I-transistor yempembelelo yentsimi enokuthi isetyenziswe ngokubanzi kwiisekethe ze-analog kunye neesekethe zedijithali.Ngokutsho kwe-polarity ye "channel" yayo (i-carrier esebenzayo), inokwahlulwa ibe ziindidi ezimbini: "N-uhlobo" kunye "nohlobo lwe-P", oluhlala lubizwa ngokuba yi-NMOS kunye ne-PMOS.
Umgaqo wokusebenza we-MOSFET
I-MOSFET inokohlulwa ibe luhlobo lophuculo kunye nodidi lokuncipha ngokwendlela yokusebenza.Uhlobo lophuculo lubhekisa kwi-MOSFET xa kungekho volyumu yokucalanye isetyenzisiweyo kwaye kungekho confumjelo ojikelezayo.Uhlobo lokuncipha lubhekiselele kwi-MOSFET xa kungekho mbane we-bias usetyenziswayo.Itshaneli yokuqhuba iya kuvela.
Kwizicelo ezizizo, kukho kuphela uhlobo lwe-N-channel yophuculo kunye nodidi lwe-P-channel yophuculo lwe-MOSFETs.Kuba ii-NMOSFET zinokuxhathisa okuncinci kurhulumente kwaye kulula ukwenza, i-NMOS ixhaphake kakhulu kune-PMOS kwizicelo zokwenyani.
Imo yophuculo MOSFET
Kukho imidibaniso emibini yokubuyela umva kwe-PN phakathi komsele D kunye nomthombo we-S wendlela yokuphucula i-MOSFET.Xa i-voltage yomthombo wesango i-VGS = 0, nokuba i-voltage ye-drain-source i-VDS yongezwa, kusoloko kukho i-PN junction kwi-state-biased state, kwaye akukho mjelo wokuqhuba phakathi kwe-drain kunye nomthombo (akukho misinga yangoku. ).Ngoko ke, i-id yangoku ye-ID=0 ngeli xesha.
Ngeli xesha, ukuba i-voltage yangaphambili yongezwa phakathi kwesango kunye nomthombo.Oko kukuthi, i-VGS> 0, ngoko intsimi yombane enesango elihambelana ne-P-type silicon substrate iya kuveliswa kwi-SiO2 insulating layer phakathi kwe-electrode yesango kunye ne-silicon substrate.Ngenxa yokuba i-oxide layer i-insulating, i-voltage VGS esetyenziswe kwisango ayikwazi ukuvelisa okwangoku.I-capacitor yenziwa kumacala omabini e-oxide layer, kwaye i-VGS yesekethe elinganayo ihlawulisa le capacitor (capacitor).Kwaye uvelise intsimi yombane, njengoko i-VGS inyuka ngokucothayo, itsalwa yi-voltage efanelekileyo yesango.Inani elikhulu le-electron liqokelela kwelinye icala le-capacitor (i-capacitor) kwaye yenze i-N-type conductive channel ukusuka kwi-drain ukuya kumthombo.Xa i-VGS idlula i-voltage ye-VT ye-tube (ngokubanzi malunga ne-2V), ityhubhu ye-N-channel iqala nje ukuqhuba, ivelisa i-ID yangoku ye-drain.Sibiza i-voltage yomthombo wesango xa itshaneli iqala ukuvelisa i-voltage yokuvula.Ngokuqhelekileyo ichazwa njenge-VT.
Ukulawula ubungakanani be-voltage yesango i-VGS itshintsha amandla okanye ubuthathaka bommandla wombane, kwaye umphumo wokulawula ubungakanani be-ID yangoku ye-drain inokufezekiswa.Oku kukwayinto ebalulekileyo yee-MOSFETs ezisebenzisa imimandla yombane ukulawula okwangoku, ngoko ke zikwabizwa ngokuba yi-field effect transistors.
Ubume bangaphakathi be-MOSFET
Kwi-P-type ye-silicon substrate ene-concentration yokungcola okuphantsi, imimandla emibini ye-N+ ene-concentration ephezulu yokungcola iyenziwa, kwaye i-electrode ezimbini zitsalwa nge-aluminium yentsimbi ukuze zisebenze njenge-drain d kunye nomthombo ngokulandelelana.Emva koko umphezulu we-semiconductor ugqunywe ngesilicon dioxide ebhityileyo kakhulu (SiO2) insulating layer, kwaye i-electrode ye-aluminium ifakwe kwi-insulating layer phakathi kombhobho kunye nomthombo ukuze usebenze njengesango g.I-electrode B nayo izotyiwe kwi-substrate, yenze i-N-channel yemowudi yokuphucula i-MOSFET.Kukwanjalo nangolwakhiwo lwangaphakathi lwee-MOSFETs zodidi lwe-P-channel.
N-channel MOSFET kunye P-channel MOSFET iisimboli zesekethe
Lo mfanekiso ungasentla ubonisa isimboli yesekethe ye-MOSFET.Emfanekisweni, uD ngumbhobho, uS ngumthombo, u-G lisango, kwaye utolo oluphakathi lumele i-substrate.Ukuba utolo lukhomba ngaphakathi, lubonisa i-N-channel MOSFET, kwaye ukuba utolo lukhomba ngaphandle, lubonisa i-P-channel MOSFET.
Iisimboli zesekethe ye-MOSFET ye-N-N-channel ezimbini, i-P-channel MOSFET kunye ne-N+P-channel MOSFET iisimboli zesekethe
Enyanisweni, ngexesha lenkqubo yokuvelisa i-MOSFET, i-substrate ixhunyiwe kumthombo ngaphambi kokushiya umzi-mveliso.Ke ngoko, kwimithetho yesimboli, isimboli sotolo esimele i-substrate kufuneka sidityaniswe nomthombo ukwahlula idrain kunye nomthombo.I-polarity yombane osetyenziswa yi-MOSFET iyafana ne-transistor yethu yemveli.I-N-channel ifana ne-NPN transistor.I-drain D ixhunywe kwi-electrode efanelekileyo kwaye umthombo we-S uxhunywe kwi-electrode engafanelekanga.Xa isango elingu-G linevoltheji evumayo, itshaneli yokuqhuba yenziwa kwaye i-N-channel MOSFET iqalisa ukusebenza.Ngokufanayo, i-P-channel ifana ne-PNP transistor.I-drain D ixhunywe kwi-electrode engalunganga, umthombo we-S uqhagamshelwe kwi-electrode efanelekileyo, kwaye xa isango G line-voltage engalunganga, i-channel conductive yenziwa kwaye i-P-channel MOSFET iqala ukusebenza.
Umgaqo welahleko wokutshintsha kwe-MOSFET
Ingaba i-NMOS okanye i-PMOS, kukho ukunyanzeliswa kwangaphakathi kwe-conduction eyenziwe emva kokuba ivuliwe, ukwenzela ukuba i-current idle amandla kule nkcaso yangaphakathi.Le nxalenye yamandla asetyenzisiweyo ibizwa ngokuba yi-conduction use.Ukukhetha i-MOSFET enokumelana okuncinci kwangaphakathi kuya kunciphisa ukusetyenziswa kokuqhuba.Uxhathiso lwangaphakathi lwangoku lwee-MOSFET ezinamandla aphantsi luqhelekile malunga namashumi eemiliyoni, kwaye kukho iimiliyoni ezininzi.
Xa i-MOS ivuliwe kwaye iphelisiwe, akufunekanga iphunyezwe ngephanyazo.I-voltage kumacala omabini e-MOS iya kuba nokuhla okusebenzayo, kwaye ikhoyo ngoku ehamba ngayo iya kuba nokunyuka.Ngeli xesha, ilahleko ye-MOSFET yimveliso ye-voltage kunye nekhoyo, eyona lahleko yokutshintsha.Ngokuqhelekileyo, ilahleko yokutshintsha inkulu kakhulu kunelahleko yokuqhuba, kwaye ngokukhawuleza ukutshintshwa rhoqo, ilahleko inkulu.
Imveliso ye-voltage kunye neyangoku ngexesha lokuqhuba inkulu kakhulu, ibangele ilahleko enkulu kakhulu.Ukutshintsha ilahleko kunokuncitshiswa ngeendlela ezimbini.Enye kukunciphisa ixesha lokutshintsha, elinokunciphisa ngokufanelekileyo ilahleko ngexesha lokuvula ngalinye;enye kukunciphisa i-frequency switching, enokunciphisa inani lokutshintsha ngexesha leyunithi.
Oku kungasentla yingcaciso eneenkcukacha zomzobo wemigaqo yokusebenza ye-MOSFET kunye nohlalutyo lobume bangaphakathi be-MOSFET.Ukufunda ngakumbi nge-MOSFET, wamkelekile ukudibana no-OLUKEY ukuze akubonelele ngenkxaso yobugcisa be-MOSFET!
Ixesha lokuposa: Dec-16-2023
