I. Inkcazo yeMOSFET
Njengesixhobo esiqhutywa ngamandla ombane, izixhobo eziphezulu zangoku, Ii-MOSFETs unenani elikhulu lezicelo kwiisekethe, ngakumbi iinkqubo zamandla. Iidiode zomzimba ze-MOSFET, ezikwabizwa ngokuba zii-parasitic diodes, azifumaneki kwi-lithography yeesekethe ezidibeneyo, kodwa zifumaneka kwizixhobo ezahlukeneyo ze-MOSFET, ezibonelela ngokhuseleko olubuyela umva kunye nokuqhubekeka kwangoku xa kuqhutywa yimisinga ephezulu kwaye xa kukho imithwalo ye-inductive.
Ngenxa yobukho bale diode, isixhobo seMOSFET asinakubonwa nje sitshintsha kwisekethe, njengakwisekethe yokutshaja apho ukutshaja kugqityiwe, amandla ayasuswa kwaye ibhetri ibuyela ngaphandle, nto leyo edla ngokuba sisiphumo esingafunwayo.
Isisombululo ngokubanzi kukongeza i-diode ngasemva ukuthintela unikezelo lwamandla okubuyisela umva, kodwa iimpawu ze-diode zimisela imfuno yokuhla kwamandla ombane angaphambili we-0.6 ~ 1V, okukhokelela kwisizukulwana sobushushu obunzulu kwimisinga ephezulu ngelixa kubangela inkunkuma. kwamandla kunye nokunciphisa ukusebenza kakuhle kwamandla. Enye indlela kukufaka umva-umva we-MOSFET, kusetyenziswa ukuxhathisa okuphantsi kwe-MOSFET ukuphumeza ukusebenza kakuhle kwamandla.
Kufuneka kuqatshelwe ukuba emva kokuqhubela phambili, i-MOSFET ayilathisi, ke emva kokuqhutywa koxinzelelo, ilingana nocingo, oluxhathisayo kuphela, akukho kwehla kwamandla ombane akwilizwe, ihlala igcwala ukuxhathisa iimiliyoni ezimbalwa ukuya.iimiliyoni ngexesha, kunye ne-non-directional, evumela i-DC kunye ne-AC amandla ukuba adlule.
II. Iimpawu zee-MOSFETs
I-1, i-MOSFET sisixhobo esilawulwa ngamandla ombane, akukho nqanaba lokuqhubela phambili elifunekayo ukuqhuba imisinga ephezulu;
2, ukuxhathisa igalelo eliphezulu;
I-3, uluhlu olubanzi lokusebenzisa amaza, isantya esiphezulu sokutshintsha, ilahleko ephantsi
I-4, i-AC ikhululekile kwi-impedance ephezulu, ingxolo ephantsi.
5,Ukusetyenziswa okuhambelanayo okuninzi, ukwandisa imveliso yangoku
Okwesibini, ukusetyenziswa kwee-MOSFETs kwinkqubo yokhuseleko
1, ukuze kuqinisekiswe ukusetyenziswa ngokukhuselekileyo kwe-MOSFET, kuyilo lomgca, akufuneki kugqithe ukuchithwa kombane wombhobho, umbane womthombo wokuvuza obuninzi, umbane womthombo wesango kunye nowangoku kunye namanye amaxabiso omda weparameter.
2, iintlobo ngeentlobo zee-MOSFETs ezisetyenziswayo, kufunekangena ngokungqongqo ngokungqinelana ne-bias access efunekayo kwisekethe, ukuthobela i-polarity ye-MOSFET offset.
3. Xa ufaka i-MOSFET, qaphela indawo yokufakela ukuphepha ukusondela kwindawo yokufudumala. Ukuze kuthintelwe ukungcangcazela kwezixhobo, igobolondo kufuneka iqiniswe; ukugoba izikhonkwane zephini kufuneka kuqhutywe kubukhulu obungaphezulu kobukhulu bengcambu ye-5mm ukuthintela isikhonkwane ekugobeni nasekuvuzekeni.
4, ngenxa yothintelo oluphezulu kakhulu lwegalelo, ii-MOSFETs kufuneka zifinyezwe ngaphandle kwephini ngexesha lokuthuthwa nokugcinwa, kwaye zipakishwe ngesikhuselo sesinyithi ukuthintela ukophuka okunokwenzeka ngaphandle kwesango.
5. I-voltage yesango le-junction ye-MOSFETs ayinakutshintshwa kwaye ingagcinwa kwindawo evulekileyo, kodwa ukuchasana kwe-insulated-gate MOSFETs kuphezulu kakhulu xa kungasetyenziswanga, ngoko ke i-electrode nganye kufuneka i-short-circuited. Xa i-soldering-isango le-MOSFETs, landela i-odolo ye-source-drain-gate, kunye ne-solder ngokucinywa kombane.
Ukuqinisekisa ukusetyenziswa okukhuselekileyo kwee-MOSFETs, kufuneka uqonde ngokupheleleyo iimpawu ze-MOSFETs kunye nezilumkiso eziza kuthathwa ekusebenziseni le nkqubo, ndiyathemba ukuba isishwankathelo esingentla siya kukunceda.
Ixesha lokuposa: May-15-2024
