Ezona zizathu zimbiniof I-MOSFET ukusilela:
Ukungaphumeleli kwamandla ombane: oko kukuthi, umbane we-BVdss phakathi kombhobho kunye nomthombo udlula umbane olinganiselweyo weMOSFET kwaye ifikelela umthamo othile, obangela ukuba iMOSFET isilele.
Ukusilela koMbane weSango: Isango linengxaki ye-voltage spike engaqhelekanga, ekhokelela kukusilela kwesango le-oxygen.
Impazamo yokuwa (ukusilela kwamandla ombane)
Yintoni kanye kanye umonakalo we-avalanche? Ngamafutshane,i-MOSFET yimowudi yokusilela edalwe kukuma okuphezulu phakathi kombane webhasi, umbane wokubonisa isiguquli, umbane ovuzayo we-spike, njl.njl. kunye neMOSFET. Ngamafutshane, kukusilela okuqhelekileyo okwenzekayo xa amandla ombane kwindawo ye-drain-source pole ye-MOSFET idlula ixabiso layo lombane elichaziweyo kwaye ifikelela kumda othile wamandla.
Amanyathelo okuthintela umonakalo we-avalanche:
-Nciphisa idosi ngokufanelekileyo. Kulo shishino, ngokuqhelekileyo kuncitshiswa ngama-80-95%. Khetha ngokusekelwe kwimimiselo yewaranti yenkampani kunye nezinto eziphambili ngomgca.
-I-voltage ekhanyayo ifanelekile.
-RCD, uyilo lwesekethe yokufunxa yeTVS lufanelekile.
-Ucingo oluphezulu lwangoku kufuneka lube lukhulu ngokusemandleni ukunciphisa inductance yeparasitic.
-Khetha isichasi sesango esifanelekileyo Rg.
-Yongeza i-RC damping okanye i-Zener diode absorption kunikezelo lwamandla aphezulu njengoko kufuneka.
Ukungaphumeleli koMbane weSango
Kukho izizathu ezithathu eziphambili zombane wegridi ephezulu ngokungaqhelekanga: umbane ongatshintshiyo ngexesha lemveliso, uthutho kunye nokudibanisa; i-resonance high voltage resonance eyenziwa yiparameters ye-parasitic yezixhobo kunye neesekethe ngexesha lokusebenza kwenkqubo yamandla; kunye nokuhanjiswa kwamandla ombane aphezulu nge-Ggd ukuya kwigridi ngexesha lokothuka kwamandla ombane aphezulu (impazamo exhaphake kakhulu ngexesha lovavanyo lokubetha kombane).
Amanyathelo okuthintela iimpazamo zombane wesango:
Ukukhuselwa kwe-overvoltage phakathi kwesango kunye nomthombo: Xa i-impedance phakathi kwesango kunye nomthombo iphezulu kakhulu, inguqu yequbuliso yombane phakathi kwesango kunye nomthombo idityaniswa nesango nge-capacitance phakathi kwe-electrode, okukhokelela kulawulo oluphezulu kakhulu lwe-UGS yombane, okukhokelela kulawulo olugqithisileyo lwesango. Umonakalo osisigxina oxidative. Ukuba i-UGS ikwi-voltage esebenzayo yexeshana, isixhobo sinokubangela iimpazamo. Ngesi siseko, i-impedance ye-gate drive circuit kufuneka incitshiswe ngokufanelekileyo kwaye i-resistor yokumanzisa okanye i-20V i-voltage yokuzinzisa kufuneka idibaniswe phakathi kwesango kunye nomthombo. Kufuneka kuthathelwe ingqalelo ngokukodwa ukuthintela ukusebenza kocango oluvulekileyo.
Ukukhuselwa kwe-overvoltage phakathi kweetyhubhu zokukhupha: Ukuba kukho i-inductor kwisekethe, utshintsho olukhawulezayo lokuvuza kwangoku (di / dt) xa iyunithi icinyiwe kuya kubangela ukugqithiswa kombane wokuvuza kakuhle ngaphezu kombane wokubonelela, obangela umonakalo kwiyunithi. Ukhuseleko kufuneka lubandakanye i-clamp ye-Zener, i-RC clamp, okanye i-RC yokucinezela isiphaluka.
Ixesha lokuposa: Jul-17-2024
