Isicwangciso esithe ngqo: isixhobo esine-MOSFET esiphezulu samandla okutshatyalaliswa kobushushu, kubandakanywa i-casing yesakhiwo esingenanto kunye nebhodi yesekethe. Ibhodi yesekethe ilungiselelwe kwi-casing. Inani le-MOSFETs ecaleni-ngecala liqhagamshelwe kuzo zombini iziphelo zebhodi yesekethe ngokusebenzisa izikhonkwane. Ikwabandakanya isixhobo sokucinezela iIi-MOSFETs. I-MOSFET yenziwe ukuba isondele kwibhloko yoxinzelelo lokutshatyalaliswa kobushushu kudonga lwangaphakathi lwe-casing. Ibhloko yoxinzelelo lokutshatyalaliswa kobushushu inomjelo wokuqala wamanzi ojikelezayo ohamba kuyo. Umjelo wokuqala wamanzi ojikelezayo ulungelelaniswe ngokuthe nkqo kunye nobuninzi bee-MOSFET ezisecaleni. Udonga olusecaleni lwendlu lubonelelwa ngomjelo wesibini ojikelezayo wamanzi ohambelana nomjelo wokuqala ojikelezayo wamanzi, kwaye umjelo wamanzi ojikelezayo wesibini usondele kwi-MOSFET ehambelanayo. Ibhloko yoxinzelelo lokutshatyalaliswa kobushushu inikezelwa ngemingxunya emininzi enemisonto. Ibhloko yoxinzelelo lokutshatyalaliswa kobushushu idibaniswe ngokuthe ngqo kwindonga yangaphakathi ye-casing ngokusebenzisa izikrufu. Izikrufu zikrwelwe kwimingxuma enemisonto yebhloko yoxinzelelo lokuphelisa ubushushu ukusuka kwimingxuma enemisonto eludongeni lwecasing. Udonga lwangaphandle lwe-casing lubonelelwa nge-groove yokutshatyalaliswa kobushushu. Imivalo yokuxhasa ibonelelwa kumacala omabini odonga lwangaphakathi lwezindlu ukuxhasa ibhodi yesekethe. Xa ibhloko yoxinzelelo lokutshatyalaliswa kobushushu idityaniswe ngokuthe ngqo kudonga lwangaphakathi lwendlu, ibhodi yesiphaluka icinezelwe phakathi kweendonga zecala lebhloko yoxinzelelo lokutshatyalaliswa kobushushu kunye nemivalo yokuxhasa. Kukho ifilimu ekhuselayo phakathi kweI-MOSFETkunye nodonga lwangaphakathi lwe-casing, kwaye kukho ifilimu yokukhusela phakathi kwebhloko yoxinzelelo lokutshatyalaliswa kobushushu kunye ne-MOSFET. Udonga olusecaleni lwegobolondo lubonelelwa ngombhobho wokutshatyalaliswa kobushushu kwi-perpendicular kumjelo wokuqala wamanzi ojikelezayo. Esinye isiphelo sombhobho wokutshatyalaliswa kobushushu sinikezelwa nge-radiator, kwaye esinye isiphelo sivaliwe. I-radiator kunye nombhobho wokutshatyalaliswa kobushushu zenza i-cavity yangaphakathi evaliweyo, kwaye i-cavity yangaphakathi inikezelwa ngefriji. I-heat sink iquka i-ring dissipation ring fixedly edibeneyo kumbhobho wokutshatyalaliswa kobushushu kunye ne-heat dissipation fin edibeneyo ngokusisigxina kwindandatho yokukhupha ubushushu; isitya sobushushu sikwadityaniswe ngokusisigxina kwifeni yokupholisa.
Iziphumo ezithile: Ukwandisa ukusebenza kakuhle kokutshabalalisa ubushushu be-MOSFET kunye nokuphucula ubomi benkonzoI-MOSFET; ukuphucula umphumo wokutshatyalaliswa kobushushu be-casing, ukugcina ubushushu ngaphakathi kwi-stable stable; isakhiwo esilula kunye nokufakwa lula.
Le nkcazo ingentla isishwankathelo kuphela sesisombululo sobugcisa bokuqanjwa kwangoku. Ukuze kuqondwe ngokucacileyo iindlela zobugcisa bokuqanjwa kwangoku, kunokuphunyezwa ngokwemixholo yenkcazo. Ukuze wenze oku ngasentla kunye nezinye izinto, iimpawu kunye neenzuzo zokuqanjwa kwangoku zicace ngakumbi kwaye ziqondakala, i-embodiments ekhethiweyo ichazwe ngokweenkcukacha ngezantsi kunye nemizobo ehamba nayo.
Isixhobo sokutshatyalaliswa kobushushu siquka isakhiwo esingenanto i-casing 100 kunye nebhodi yesekethe 101. Ibhodi yesekethe i-101 ihlelwe kwi-casing 100. Inani le-MOSFETs elisecaleni ngecala lidityaniswe kuzo zombini iziphelo zebhodi yesekethe 101 ngokusebenzisa izikhonkwane. Ikwabandakanya ibhloko yoxinzelelo lwe-heat dissipation block 103 yokucinezela i-MOSFET 102 ukwenzela ukuba i-MOSFET 102 isondele kudonga lwangaphakathi lwendlu ye-100. Ibhloko yoxinzelelo lwe-heat dissipation block 103 ine-channel yokuqala ejikelezayo yamanzi i-104 ehamba ngayo. Umjelo wokuqala ojikelezayo wamanzi u-104 ulungelelaniswe ngokuthe nkqo kunye nee-MOSFET ezininzi ezisecaleni 102.
Ibhloko yoxinzelelo lokutshatyalaliswa kobushushu i-103 icinezela i-MOSFET 102 ngokubhekiselele kudonga lwangaphakathi lwezindlu ze-100, kwaye inxalenye yobushushu be-MOSFET 102 iqhutyelwa kwizindlu ze-100. Enye inxalenye yobushushu iqhutyelwa kwibhloko yokushisa ubushushu 103, kwaye indawo yokuhlala 100 ichitha ubushushu emoyeni. Ubushushu bebhloko ye-103 yokutshatyalaliswa kobushushu buthatyathwa ngamanzi okupholisa kumjelo wokuqala ojikelezayo wamanzi we-104, ophucula umphumo wokutshatyalaliswa kobushushu be-MOSFET 102. Kwangaxeshanye, inxalenye yobushushu obuveliswa ngamanye amacandelo kwizindlu. I-100 iphinda iqhutywe kwibhloko yoxinzelelo lwe-heat dissipation block 103. Ngoko ke, ibhloko yoxinzelelo lwe-heat dissipation block 103 inokunciphisa ngakumbi ukushisa kwizindlu ze-100 kunye nokuphucula ukusebenza kakuhle kunye nobomi benkonzo yamanye amacandelo kwizindlu ze-100; I-casing 100 inesakhiwo esingenanto, ngoko ukushisa akuqokelelwa lula kwi-casing 100, ngaloo ndlela ikhusela ibhodi yesiphaluka i-101 ekutshiseni kunye nokutshisa. Udonga olusecaleni lwendlu ye-100 lubonelelwe ngomjelo wamanzi ojikelezayo wesibini we-105 ngokuhambelana nomjelo wokuqala ojikelezayo wamanzi 104, kwaye umjelo wamanzi ojikelezayo wesibini u-105 usondele kwi-MOSFET 102 ehambelanayo. Udonga lwangaphandle lwendlu ye-100 lunikezelwa nge-groove yokutshatyalaliswa kobushushu 108. Ukushisa kwezindlu ze-100 kuthathwa ngokuyinhloko ngamanzi okupholisa kumjelo wesibini ojikelezayo wamanzi we-105. Enye inxalenye yobushushu ichithwa kwi-groove ye-heat dissipation 108, ephucula umphumo wokutshatyalaliswa kobushushu bezindlu 100. Ibhloko yoxinzelelo lwe-heat dissipation block 103 inikwe imingxunya emininzi ene-threaded 107. Ibhloko yoxinzelelo lokutshatyalaliswa kobushushu i-103 ixhunyiwe ngokusisigxina kwi udonga lwangaphakathi lwendlu 100 ngokusebenzisa izikrufu. Izikrufu zikrwelwe kwimingxuma enemisonto yebhloko yoxinzelelo lokuchitha ubushushu 103 ukusuka kwimingxuma enemisonto esecaleni kwendlu ye-100.
Kwimveliso yangoku, isiqwenga sokudibanisa i-109 sisuka kumda webhloko yoxinzelelo lwe-heat dissipation block 103. Isiqwenga sokudibanisa i-109 sinikezelwa ngenani lemingxuma edibeneyo ye-107. ngokusebenzisa izikrufu. Imivalo yenkxaso ye-106 inikezelwa kumacala omabini odonga lwangaphakathi lwendlu ye-100 ukuxhasa ibhodi yesekethe 101. Xa ibhloko yoxinzelelo lokutshatyalaliswa kobushushu i-103 idibaniswe ngokusisigxina eludongeni lwangaphakathi lwendlu ye-100, ibhodi yesiphaluka 101 icinezelwe phakathi Iindonga ezisecaleni zebhloko yoxinzelelo lokutshatyalaliswa kobushushu 103 kunye nemivalo yenkxaso 106. Ngexesha lofakelo, ibhodi yesekethe i-101 ibekwe kuqala kumphezulu we-bar yokuxhasa i-106, kwaye i-bottom yebhloko yoxinzelelo lokutshatyalaliswa kobushushu i-103 icinezelwe ngokubhekiselele kumphezulu ophezulu. yebhodi yesekethe 101. Emva koko, ibhloko yoxinzelelo lokutshatyalaliswa kobushushu i-103 igxininiswe kwindonga yangaphakathi yendlu ye-100 enezikrini. I-clamping groove yenziwa phakathi kwebhloko yoxinzelelo lokutshatyalaliswa kobushushu be-103 kunye ne-bar yokuxhasa i-106 ukunyanzelisa ibhodi yesiphaluka 101 ukuququzelela ukufakwa kunye nokususwa kwebhodi yesekethe 101. Ngelo xesha, ibhodi yesiphaluka i-101 isondele kwi-heat dissipation. ibhloko yoxinzelelo lwe-103. Ngoko ke, ubushushu obuveliswa yibhodi yesiphaluka i-101 buqhutyelwa kwibhloko yoxinzelelo lokutshatyalaliswa kobushushu 103, kwaye ibhloko yoxinzelelo lokutshatyalaliswa kobushushu i-103 ithathwa ngamanzi okupholisa kumjelo wokuqala ojikelezayo wamanzi we-104, ngaloo ndlela ukuthintela ibhodi yesiphaluka 101 ekushiseni. kunye nokutshisa. Ngokukhethekileyo, ifilimu ekhuselayo ilahlwe phakathi kwe-MOSFET 102 kunye nodonga lwangaphakathi lwendlu ye-100, kwaye ifilimu yokukhusela ifakwe phakathi kwebhloko yoxinzelelo lokutshatyalaliswa kobushushu 103 kunye ne-MOSFET 102.
Isixhobo sokuchitha ubushushu be-MOSFET samandla aphezulu sibandakanya i-casing structure casing 200 kunye nebhodi yesekethe 202. Ibhodi yesekethe i-202 icwangciswe kwi-casing 200. Inani le-MOSFETs ecaleni-by-side 202 idityaniswe ngokulandelelana kuzo zombini iziphelo zesekethe. ibhodi 202 ngokusebenzisa izikhonkwane, kwaye ikwabandakanya ibhloko yoxinzelelo lwe-heat dissipation 203 yokucinezela i-MOSFETs 202 ukwenzela ukuba i-MOSFETs 202 isondele kudonga lwangaphakathi lwezindlu ze-200. Umjelo wokuqala ojikelezayo wamanzi 204 uhamba ngebhloko yoxinzelelo lokutshatyalaliswa kobushushu 203. Umjelo wokuqala ojikelezayo wamanzi 204 ulungelelaniswe ngokuthe nkqo kunye nee-MOSFET ezininzi zecala 202. umjelo wokuqala ojikelezayo wamanzi we-204, kunye nesinye isiphelo sombhobho wokutshatyalaliswa kobushushu 205 unikezelwa ngomzimba wokutshatyalaliswa kobushushu 206. Esinye isiphelo sivaliwe, kunye nomzimba wokutshatyalaliswa kobushushu 206 kunye nombhobho wokutshatyalaliswa kobushushu 205 wenze i-cavity yangaphakathi evaliweyo, kwaye ifriji icwangciswe kwindawo engaphakathi. I-MOSFET 202 yenza ubushushu kwaye ifunze isikhenkcisi. Xa umphunga, ufunxa ubushushu ukusuka ekupheleni kokufudumeza (kufuphi ne-MOSFET 202 ekupheleni), kwaye uqukuqela ukusuka ekupheleni kokufudumeza ukuya ekupheleni kokupholisa (kude ne-MOSFET 202 ekupheleni). Xa idibana nengqele ekupheleni kokupholisa, ikhupha ubushushu kwi-periphery yangaphandle yodonga lwetyhubhu. Ulwelo ke luqukuqela ukuya ekupheleni kokufudumeza, ngaloo ndlela lwenza isekethe yokuchitha ubushushu. Oku kutshatyalaliswa kobushushu ngokusebenzisa i-vaporization kunye nolwelo kungcono kakhulu kunokutshatyalaliswa kobushushu babaqhubi bobushushu obuqhelekileyo. Umzimba wokutshatyalaliswa kobushushu be-206 uquka i-ring 207 edibeneyo yokutshatyalaliswa kobushushu kunye nombhobho wokutshatyalaliswa kobushushu 205 kunye ne-208 edibeneyo edibeneyo kwindandatho yokushisa ubushushu 207; I-fin yokuchitha ubushushu engama-208 ikwadityaniswe ngokusisigxina kwifeni yokupholisa engama-209.
Iringi yokuchitha ubushushu 207 kunye nombhobho wokutshatyalaliswa kobushushu 205 unomgama omde ofanelekileyo, ukuze i-ring dissipation ring 207 ikwazi ukuhambisa ngokukhawuleza ubushushu kumbhobho wokutshatyalaliswa kobushushu 205 kwi-208 yokufezekisa ukutshatyalaliswa ngokukhawuleza kobushushu.
Ixesha lokuposa: Nov-08-2023
