Uhlobo lwe-N, uhlobo lwe-P ye-MOSFET umgaqo wokusebenza we-escence uyafana, i-MOSFET yongezwa ikakhulu kwicala lokufaka i-voltage yesango ukuze ulawule ngempumelelo icala lokuphuma kwe-drain yangoku, i-MOSFET sisixhobo esilawulwa ngamandla ombane, ngokusebenzisa i-voltage eyongeziweyo. kwisango ukulawula iimpawu zesixhobo, ngokungafaniyo ne-triode yokwenza ixesha lokutshintsha ngenxa yesiseko sangoku esibangelwa yimpembelelo yokugcina intlawulo, ekutshintsheni izicelo, i-MOSFET's Ekutshintsheni izicelo,I-MOSFET's isantya sokutshintsha sikhawuleza kuneso se-triode.
Kunikezelo lwamandla okutshintsha, oluqhelekileyo olusetyenziswa yi-MOSFET i-drain evulekileyo yesekethe, idreyini iqhagamshelwe kumthwalo njengoko ibizwa ngokuba yi-open drain, i-drain circuit evulekileyo, umthwalo uqhagamshelwe kwindlela i-voltage ephezulu ngayo, ekwazi ukuyivula, cima umthwalo wangoku, sisixhobo esifanelekileyo sokutshintsha i-analog, engumgaqo-siseko we-MOSFET ukwenza izixhobo zokutshintsha, i-MOSFET ukwenza ukutshintshwa kwimo yeesekethe ezininzi.
Ngokumalunga nokutshintsha izicelo zobonelelo lwamandla, esi sicelo sidinga Ii-MOSFETs ukwenza ngamaxesha athile, cima, ezifana DC-DC amandla unikezelo ngokuqhelekileyo kusetyenziswa isiguquli buck esisiseko ixhomekeke MOSFETs ezimbini ukwenza umsebenzi wokutshintsha, ezi switsha ngokushiyanayo kwi inductor ukugcina amandla, ukukhulula amandla kumthwalo, ngokufuthi khetha amakhulu e-kHz okanye nangaphezulu kwe-1 MHz, ngakumbi ngenxa yokuba ubuninzi befrikhwensi ngoko, buncinci bezinto zemagneti. Ngethuba lokusebenza okuqhelekileyo, i-MOSFET ilingana nomqhubi, umzekelo, i-MOSFETs yamandla aphezulu, ii-MOSFET ezincinci, iisekethe, ukunikezelwa kwamandla yilahleko encinci ye-MOS.
Iiparamitha ze-PDF ze-MOSFET, abavelisi be-MOSFET baye bamkela ngempumelelo ipharamitha ye-RDS (ON) ukuchaza i-impedance ye-state, ekutshintsheni izicelo, i-RDS (ON) yeyona nto ibalulekileyo yesixhobo; ii-database zichaza i-RDS (ON), isango (okanye i-drive) i-voltage ye-VGS kunye ne-current flowing by switch inxulumene, i-adequate gate drive drive, i-RDS (ON) yipharamitha engatshintshiyo; Ii-MOSFET eziye zaqhutywa ziyakwazi ukuvelisa ubushushu, kwaye ukunyuka kancinci kwamaqondo obushushu e-junction kunokukhokelela ekwandeni kwe-RDS (ON);I-MOSFET Idatha yedatha ichaza iparamitha ye-thermal impedance, echazwa njengokukwazi kwe-semiconductor junction yephakheji ye-MOSFET ukukhupha ubushushu, kwaye i-RθJC ichazwa ngokulula njengendawo yokuhlangana-kuya-kwimeko ye-thermal.
I-1, i-frequency iphezulu kakhulu, ngamanye amaxesha ukuphishekela umthamo, kuya kukhokelela ngokuthe ngqo kwi-frequency ephezulu, i-MOSFET ekwenyukeni kwelahleko, ubushushu obukhulu, musa ukwenza umsebenzi olungileyo woyilo olwaneleyo lokulahla ubushushu, ngoku okuphezulu, okuqhelekileyo. ixabiso langoku le-MOSFET, imfuno yokutshatyalaliswa kobushushu okulungileyo ukuze ikwazi ukufikelela; I-ID ingaphantsi kowona mzuzu uphezulu, inokuba bubushushu obunzulu, imfuno yeeheatsinks ezaneleyo ezincedisayo.
I-2, iimpazamo zokukhetha i-MOSFET kunye neempazamo kumgwebo wamandla, ukuchasana kwangaphakathi kwe-MOSFET akuqwalaselwanga ngokupheleleyo, kuya kukhokelela ngokuthe ngqo ekunyuseni kokutshintsha kokutshintsha, xa ujongene neengxaki zokufudumeza kwe-MOSFET.
3, ngenxa yeengxaki zoyilo lwesekethe, okukhokelela kubushushu, ukuze iMOSFET isebenze kwindawo yokusebenza ehambelanayo, hayi kwindawo yokutshintsha, nto leyo ingunobangela othe ngqo wokufudumeza kweMOSFET, umzekelo, i-N-MOS yenza utshintsho, i-G- I-voltage yezinga kufuneka ibe phezulu kunokunikezelwa kwamandla nge-V embalwa, ukuze ikwazi ukuqhuba ngokupheleleyo, i-P-MOS ihluke; ngokungabikho kokuvula ngokupheleleyo, ukuhla kwamandla ombane kukhulu kakhulu, okuya kubangela ukusetyenziswa kwamandla, i-impedance ye-DC elinganayo inkulu, i-voltage drop drop nayo iya kwanda, i-U * ndiya kwandisa, ilahleko iya kubangela ukushisa.
Ixesha lokuposa: Aug-01-2024
