Ukhetho lweMOSFET | N-Channel MOSFET Construction Principles

Isakhiwo se-Metal-Oxide-SemIConductor ye-crystal transistor eyaziwa ngokuba yiI-MOSFET, apho ii-MOSFET zahlulwe zaba zii-P-type MOSFETs kunye ne-N-type MOSFETs. Iisekethe ezidityanisiweyo ezenziwe zii-MOSFET zikwabizwa ngokuba ziisekethe ezidibeneyo ze-MOSFET, kunye neesekethe ezidibeneyo ze-MOSFET ezisondeleleneyo ezenziwe zii-PMOSFETs kunye.NMOSFETs zibizwa ngokuba ziisekethe ezidibeneyo ze-CMOSFET.

ISazobe seSekethe ye-MOSFET ye-N-Channel 1

I-MOSFET ebandakanya i-p-type substrate kunye neendawo ezimbini ze-n-spreading ezinamaxabiso aphezulu okuxininisa kuthiwa yi-n-channel.I-MOSFET, kunye nomzila wokuqhuba obangelwa yi-n-type conductive channel ibangelwa iindlela ze-n-spreading kwiindlela ezimbini ze-n-spreading kunye namaxabiso aphezulu okugxininiswa xa ityhubhu iqhuba. I-n-channel ejiyileyo ye-MOSFETs ine-n-channel ebangelwa ngumjelo wokuqhuba xa i-bias ye-directional bias iphakanyiswa kangangoko kunokwenzeka kwisango kwaye kuphela xa umsebenzi womthombo wesango ufuna i-voltage yokusebenza edlula i-voltage ye-threshold. I-n-channel depletion MOSFETs zezo zingekakulungeli umbane wesango (umsebenzi womthombo wesango ufuna i-voltage yokusebenza engu-zero). Ukuncipha kokukhanya kokukhanya kwe-n-channel I-MOSFET yi-n-channel MOSFET apho umjelo wokuqhuba ubangelwa xa umbane wesango (umthombo wesango osebenza imfuno yokusebenza kwamandla ombane unguziro) ungalungiswanga.

Iisekethe ezidityanisiweyo ze-NMOSFET ziisekethe zobonelelo lwamandla e-N-channel MOSFET, iisekethe ezidibeneyo ze-NMOSFET, ukuxhathisa igalelo kuphezulu kakhulu, uninzi akunyanzelekanga ukuba lwetyise ukufunxwa kokuhamba kwamandla, kwaye ke ngoko i-CMOSFET kunye ne-NMOSFET iisekethe ezidityanisiweyo ziqhagamshelwe ngaphandle kokuthatha inxaxheba. qwalasela umthwalo wokuhamba kwamandla.Iisekethe ezihlanganisiweyo ze-NMOSFET, uninzi lokhetho lweqela elinye elilungileyo lokutshintshela unikezelo lwamandla ombane iisekethe zobonelelo lwamandla Uninzi lweesekethe ezihlanganisiweyo ze-NMOSFET zisebenzisa isekethe yonikezelo lwamandla ombane elungileyo, kunye ne-9V ngaphezulu. Iisekethe ezihlanganisiweyo ze-CMOSFET zifuna kuphela ukusebenzisa isekethe yonikezelo lwamandla ombane otshintshayo ofanayo njengeesekethe ezihlanganisiweyo ze-NMOSFET, zinokudityaniswa neesekethe ezihlanganisiweyo ze-NMOSFET ngoko nangoko. Nangona kunjalo, ukusuka kwi-NMOSFET ukuya kwi-CMOSFET iqhagamshelwe ngoko nangoko, kuba ukuchasana kwe-NMOSFET kokutsalwa phezulu kungaphantsi kwe-CMOSFET edityanisiweyo yesekethe ukuxhathisa ukutsalela phezulu, ke zama ukufaka umahluko onokubakho wokutsalela phezulu R, ixabiso le-resistor R li. ngokubanzi 2 ukuya 100KΩ.

Ukwakhiwa kwe-N-chaneli eyandisiweyo yee-MOSFETs
Kwi-P-type ye-silicon substrate enexabiso eliphantsi le-doping yoxinaniso, imimandla emibini ye-N enexabiso eliphezulu loxinaniso lwe-doping iyenziwa, kwaye ii-electrode ezimbini zitsalwa ngentsimbi ye-aluminiyam ukuze zisebenze njenge-drain d kunye nomthombo s, ngokulandelelanayo.

Emva koko kwi-semiconductor inxalenye yomhlaba egquma umaleko obhityileyo kakhulu we-silica insulating tube, kwidrain - source insulating tube phakathi kombhobho kunye nomthombo wenye i-electrode ye-aluminium, njengesango g.

Kwi-substrate kwakhona kukho i-electrode B, equka i-N-channel engqingqwa ye-MOSFET. Umthombo we-MOSFET kunye ne-substrate ngokubanzi zidibaniswe kunye, ubuninzi bombhobho kwifektri sele ixhunyiwe kuyo, isango layo kunye nezinye i-electrodes zifakwe phakathi kwe-casing.