Uhlalutyo lokungaphumeleli kwe-MOSFET: Ukuqonda, uThintelo, kunye nezisombululo

Uhlalutyo lokungaphumeleli kwe-MOSFET: Ukuqonda, uThintelo, kunye nezisombululo

Ixesha lokuposa: Dec-13-2024

Isishwankathelo esiKhawulezayo:I-MOSFETs inokusilela ngenxa yombane, i-thermal, kunye noxinzelelo lomatshini. Ukuqonda ezi ndlela zokungaphumeleli kubalulekile ekuyileni iinkqubo ezithembekileyo zombane wombane. Esi sikhokelo sibanzi sihlola iindlela zokungaphumeleli eziqhelekileyo kunye nezicwangciso zokuthintela.

I-avareji-ppm-ye-Iindlela-Ezohlukeneyo-MOSFET-UkusilelaIindlela eziQhelekileyo zokungaphumeleli kwe-MOSFET kunye noonobangela bazo

1. Ukusilela okuNxulumene neVoltage

  • Ukuqhekeka kwesango le-oxide
  • Ukuqhekeka kweAvalanche
  • I-Punch-through
  • Umonakalo wokukhupha iStatic

2. Iintsilelo ezinxulumene ne-Thermal

  • Ukwahlulahlula okwesibini
  • Ukubaleka kwe-thermal
  • Package delamination
  • Bond wire lift-off
Imo Yokusilela Oonobangela abaphambili Iimpawu ezilumkisayo Iindlela Zokuthintela
Ukuqhekeka kweSango oxide I-VGS egqithisileyo, imicimbi ye-ESD Ukonyuka kokuvuza kwesango Ukhuseleko lwamandla ombane wesango, imilinganiselo ye-ESD
I-Thermal Runaway Ukutshatyalaliswa kwamandla ngokugqithisileyo Ukunyuka kobushushu, ukunciphisa isantya sokutshintsha Uyilo olufanelekileyo lwe-thermal, ukuhla
Ukuqhekeka kweAvalanche I-voltage spikes, i-inductive switching engafakwanga Umsele-umthombo wesekethe emfutshane Iisekethe ze-snubber, i-voltage clamps

Winsok kaThixo Robust MOSFET Solutions

Isizukulwana sethu samva nje se-MOSFET sibonisa iindlela zokhuseleko ezikumgangatho ophezulu:

  • I-SOA ephuculweyo (iNdawo yokuSebenza eKhuselekileyo)
  • Ukuphuculwa kokusebenza kwe-thermal
  • Ukhuseleko olwakhelwe ngaphakathi lwe-ESD
  • Uyilo lweAvalanche-rated

Uhlalutyo oluneenkcukacha lweeNdlela zokuSilela

Ukuqhekeka kweSango oxide

IiParameters ezibalulekileyo:

  • Ubuninzi beSango-Umthombo wombane: ± 20V eqhelekileyo
  • Ukutyeba kwe-Oxide yeSango: 50-100nm
  • Amandla oMmandla wokuqhekeka: ~ 10 MV/cm

Amanyathelo oThintelo:

  1. Qalisa ukuqina kombane wesango
  2. Sebenzisa izixhasi zesango ezilandelelanayo
  3. Faka ii-TVS diodes
  4. Imisebenzi eyiyo yoyilo lwePCB

Ulawulo lwe-Thermal kunye noThintelo lokungaphumeleli

Uhlobo lwePakethe Temp Derating ecetyisiweyo Ukupholisa Isisombululo
UKUYA-220 175°C 25% I-Heatsink + Fan
D2PAK 175°C 30% Indawo enkulu yobhedu + i-Heatsink eKhethekileyo
I-SOT-23 150°C 40% PCB Copper Pour

Iingcebiso zoYilo oluBalulekileyo loNtembeko lweMOSFET

Uyilo lwePCB

  • Nciphisa indawo yesango leluphu
  • Ukwahlula amandla kunye neendawo zomqondiso
  • Sebenzisa uqhagamshelo lomthombo weKelvin
  • Lungiselela ukubekwa kwe-thermal vias

Ukhuseleko lweSekethe

  • Sebenzisa iisekethe eziqala ngokuthambileyo
  • Sebenzisa i-snubbers efanelekileyo
  • Yongeza ukhuseleko lwamandla ombane
  • Beka iliso kwisixhobo sobushushu

Iinkqubo zokuxilonga kunye noVavanyo

Inkqubo yoVavanyo lwe-MOSFET esisiseko

  1. Uvavanyo lweeParamitha ezimileyo
    • Umbane wesango lomda wombane (VGS(th))
    • Umsele-umthombo on-resistance (RDS(on))
    • Ukuvuza kwesango langoku (IGSS)
  2. Uvavanyo olunamandla
    • Amaxesha okutshintsha (toni, toff)
    • Iimpawu zentlawulo yesango
    • Umthamo wemveliso

Iinkonzo zokuphucula ukuthembeka kweWinsok

  • Uphononongo olubanzi lwesicelo
  • Uhlalutyo lwe-Thermal kunye nokuphucula
  • Ukuvavanya ukuthembeka kunye nokuqinisekiswa
  • Ukungaphumeleli uhlalutyo lwenkxaso yelabhoratri

Ukuthembeka kweNkcazo kunye noHlalutyo lobomi

IiMetrikhi zoNtembeko eziphambili

Ireyithi yeFIT (Ukusilela ngexesha)

Inani lokusilela ngebhiliyoni nganye yeeyure zesixhobo

0.1 - 10 FIT

Ngokusekwe kuthotho lwamva nje lwe-MOSFET lweWinsok phantsi kweemeko ezingephi

I-MTTF (ixesha elililo lokusilela)

Ubomi obulindelekileyo phantsi kweemeko ezithile

>10^6 iiyure

Kwi-TJ = 125 ° C, i-voltage yegama

Ireyithi yokusinda

Ipesenti yezixhobo ezisindayo ngaphaya kwexesha lewaranti

99.9%

Kwiminyaka emi-5 yokusebenza ngokuqhubekayo

Ubomi bonke Derating Factors

Imeko yokusebenza I-Derating Factor Impembelelo kuBomi bonke
Iqondo lobushushu (nge-10°C ngaphezulu kwe-25°C) 0.5x I-50% yokunciphisa
Uxinzelelo lweVoltage (95% yomlinganiselo omkhulu) 0.7x I-30% yokunciphisa
Ukutshintsha iFrequency (2x ngobizo) 0.8x I-20% yokunciphisa
Ukufuma (85% RH) 0.9x I-10% yokunciphisa

Lifetime Probability Distribution

umfanekiso (1)

Ukusasazwa kwe-Weibull kubomi be-MOSFET ebonisa ukusilela kwangoko, ukusilela okungahleliweyo, kunye nexesha eligugileyo

Imiba yoxinzelelo lwendalo esingqongileyo

Ubushushu bokukhwela ibhayisekile

85%

Impembelelo ekuncitshisweni kobomi bonke

UkuHamba ngeBhayisikile ngamandla

70%

Impembelelo ekuncitshisweni kobomi bonke

Uxinzelelo loomatshini

45%

Impembelelo ekuncitshisweni kobomi bonke

Iziphumo zoVavanyo loBomi olukhawulezileyo

Uhlobo loVavanyo Iimeko Ubude bexesha Inqanaba lokusilela
I-HTOL (uBomi bokuSebenza ngobushushu obuphezulu) 150°C, Max VDS 1000 iiyure < 0.1%
THB (I-Temperature Humidity Bias) 85°C/85% RH 1000 iiyure < 0.2%
I-TC (i-Temperature Cycling) -55°C ukuya +150°C 1000 imijikelo < 0.3%

Inkqubo yoQinisekiso loMgangatho weWinsok

2

Uvavanyo lokuhlola

  • I-100% yovavanyo lwemveliso
  • Ukuqinisekiswa kweParameter
  • Iimpawu ezinamandla
  • Ukuhlolwa okubonakalayo

Iimvavanyo zokufaneleka

  • Ukuhlolwa koxinzelelo lwendalo
  • Ukuqinisekisa ukuthembeka
  • Uvavanyo lwengqibelelo yephakheji
  • Ixesha elide lokubeka iliso lokuthembeka