I-Lithium njengohlobo olutsha lweebhetri ezihambelana nokusingqongileyo, kudala isetyenziswa ngokuthe ngcembe kwiimoto zebhetri. Akwaziwa ngenxa yeempawu zebhetri ze-lithium ye-iron phosphate etshajwayo, ekusetyenzisweni kufuneka kube yinkqubo yokutshaja ibhetri ukwenza ulondolozo ukuthintela ukulahleka kwamandla okutshaja kakhulu okanye ubushushu obungaphezulu kobushushu bokuqinisekisa ukuba umsebenzi wokhuseleko lwebhetri egcwalisekayo. Nangona kunjalo, ukukhuselwa okugqithisiweyo yi-polarization yenkqubo yonke yokutshaja kunye nokukhupha imigangatho yokusebenza ngokugqithiseleyo, ngoko ungakhetha njani amandla emodeli ye-MOSFET kunye neenkqubo zoyilo ezifanelekileyo kwisekethe yokuqhuba?
Umsebenzi othile, ngokusekelwe kwizicelo ezahlukeneyo, uya kusebenzisa amandla amaninzi e-MOSFETs asebenza ngokufanayo ukunciphisa i-resistor kunye nokuphucula iimpawu ze-thermal conductivity. Yonke imisebenzi eqhelekileyo, lawula isignali yedatha ukukhohlisa i-MOSFET, i-lithium yebhetri yepakethe iitheminali P kunye ne-P-output voltage kwizicelo zokusebenza. Ngeli xesha, amandla e-MOSFET ebekwimeko yokuqhuba, ukulahleka kwamandla kukulahleka kokuqhuba kuphela, akukho lahleko yokutshintsha kwamandla, ukulahleka kwamandla e-MOSFET akuphezulu, ukunyuka kobushushu kuncinci, ngoko ke amandla eMOSFET angakwazi. sebenza ngokukhuselekileyo.
Nangona kunjalo, xa load ivelisa impazamo yesekethe emfutshane, umthamo wesekethe emfutshane ngokukhawuleza unyuka ukusuka kumashumi alishumi e-amperes ukusebenza okuqhelekileyo ukuya kumakhulu aliqela e-ampere ngenxa yokuba uxhathiso lwesekethe alukhulu kwaye ibhetri etshajwayo inomthamo owomeleleyo wokutshaja, kunye namandla.Ii-MOSFETs kulula kakhulu ukutshatyalaliswa kwimeko enjalo. Ke ngoko, ukuba kunokwenzeka, khetha i-MOSFET ene-RDS encinci (ON), ukuze ibe mbalwaIi-MOSFETs inokusetyenziswa ngokuhambelanayo. Ii-MOSFET ezininzi ngaxeshanye zisesichengeni sokungalingani ngoku. Izichasi zokutyhala ezahlukileyo nezifanayo ziyafuneka kwii-MOSFET ezinxuseneyo ukunqanda ukuguquguquka phakathi kwee-MOSFET.