Intshayelelo kumgaqo wokusebenza osetyenziswa ngokuqhelekileyo amandla aphezulu eMOSFETs

Namhlanje kumandla aphezulu asetyenziswa ngokuqhelekileyoI-MOSFETukwazisa ngokufutshane umgaqo wayo wokusebenza. Jonga indlela ewuqonda ngayo umsebenzi wayo.

I-Metal-Oxide-Semiconductor oko kukuthi, i-Metal-Oxide-Semiconductor, ngokuchanekileyo, eli gama lichaza isakhiwo se-MOSFET kwisekethe edibeneyo, oko kukuthi: kwisakhiwo esithile sesixhobo se-semiconductor, kunye ne-silicon dioxide kunye nesinyithi, ukubunjwa. yesango.

Umthombo kunye ne-drain ye-MOSFET iyachaswa, zombini ziyizowuni zohlobo lwe-N ezenziwe kwi-backgate yohlobo lwe-P. Kwiimeko ezininzi, ezi ndawo zimbini ziyafana, nokuba iziphelo ezimbini zohlengahlengiso aziyi kuchaphazela ukusebenza kwesixhobo, isixhobo esinjalo sithathwa njenge-symmetrical.

Ulwahlulo: ngokohlobo lwemathiriyeli yomjelo kunye nohlobo lwesango olugqunyiweyo lwe-N-channel nganye kunye ne-P-channel ezimbini; ngokwemowudi yokuqhuba: I-MOSFET yahlulwe ibe yi-depletion kunye nophuculo, ngoko ke i-MOSFET yahlulwe yaba yi-N-channel depletion kunye nokuphucula; Ukuncipha kwetshaneli kunye nokwandiswa kweendidi ezine eziphambili.

Umgaqo we-MOSFET wokusebenza - iimpawu zesakhiwoI-MOSFETiqhuba kuphela abathwali be-polarity (iipolys) ezibandakanyekayo kwi-conductive, i-unipolar transistor. Indlela yokuqhuba iyafana ne-MOSFET yamandla aphantsi, kodwa isakhiwo sinomohluko omkhulu, i-MOSFET yamandla aphantsi sisixhobo sokuqhuba esithe tye, uninzi lwamandla e-MOSFET ethe nkqo yesakhiwo sokuqhuba, ekwaziwa ngokuba yi-VMOSFET, ephucula kakhulu i-MOSFET. amandla ombane wesixhobo kunye namandla okumelana nangoku. Eyona nto ibalulekileyo kukuba kukho umaleko we-silica insulation phakathi kwesango lentsimbi kunye nomjelo, kwaye ngoko unokumelana okuphezulu kwegalelo, ityhubhu iqhuba kwiindawo ezimbini eziphezulu ze-n diffusion zone ukwenza i-n-type conductive channel. Ukwandiswa kwe-n-chaneli Ii-MOSFETs kufuneka zisetyenziswe esangweni ngokuthambekela phambili, kwaye kuphela xa amandla ombane omthombo wesango mkhulu kunombane wombane wethreshold wetshaneli yokuqhuba eveliswa yi-n-channel MOSFET. I-n-channel depletion type MOSFETs zii-n-channel MOSFETs apho amajelo okuqhuba aveliswa xa kungekho mbane wesango usetyenziswayo (isango lombane lomthombo nguziro).

Umgaqo wokusebenza kwe-MOSFET kukulawula isixa "sentlawulo eyenziwayo" ngokusebenzisa i-VGS ukuguqula imeko ye-conductive channel eyenziwa yi "induced charge", kwaye emva koko ufezekise injongo yokulawula i-drain current. Ekwenziweni kwemibhobho, ngokusebenzisa inkqubo insulating umaleko ekuveleni inani elikhulu ion ezintle, ngoko ke kwelinye icala ujongano kunokunyanzeliswa intlawulo embi ngakumbi, ezi ntlawulo ezingalunganga ukuya phezulu kokungena ukungcola kwi-N. ummandla oqhagamshelwe ekubunjweni komjelo wokuqhuba, nakwi-VGS = 0 kukho kwakhona ukuvuza okukhulu kwe-ID yangoku. xa i-voltage yesango itshintshiwe, isixa sentlawulo esiyenziwe kwitshaneli sitshintshiwe kwakhona, kunye nobubanzi betshaneli eqhubayo kunye nokuxinwa kwetshaneli kunye nokutshintsha, kwaye ngaloo ndlela i-ID yokuvuza yangoku kunye nombane wesango. I-ID yangoku iyahluka kunye nombane wesango.

Ngoku isicelo seI-MOSFETiphucule kakhulu ukufunda kwabantu, ukusebenza kakuhle, ngelixa iphucula umgangatho wobomi bethu. Sinengqiqo elungelelanisiweyo ngayo ngokuqonda okulula. Akuyi kusetyenziswa kuphela njengesixhobo, ukuqonda ngakumbi iimpawu zayo, umgaqo womsebenzi, oya kusinika ulonwabo olukhulu.