Izikhokelo zokuKhetha iPhakeji ye-MOSFET

Okwesibini, ubungakanani bemida yenkqubo

Ezinye iisistim zombane zikhawulelwe ngobungakanani bePCB kunye nengaphakathi ubude, sUch njengeenkqubo zonxibelelwano, unikezelo lwamandla lwemodyuli ngenxa yokulinganiselwa kobude ngokuqhelekileyo basebenzisa i-DFN5 * 6, DFN3 * 3 iphakheji; kwezinye unikezelo lwamandla ACDC, ukusetyenziswa uyilo ultra-obhityileyo okanye ngenxa yothintelo iqokobhe, indibano TO220 ipakethe yamandla MOSFET iinyawo ifakwe ngqo kwingcambu imida ukuphakama ayikwazi ukusebenzisa iphakheji TO247. Olunye uyilo olubhityileyo olugoba ngokuthe ngqo izikhonkwane zesixhobo, le nkqubo yoyilo lokuvelisa iya kuba nzima.

Okwesithathu, inkqubo yemveliso yenkampani

I-TO220 ineentlobo ezimbini zephakheji: iphakheji yentsimbi engenanto kunye neplastiki epheleleyo, i-package yentsimbi engenanto yokuxhathisa i-thermal incinci, amandla okutshatyalaliswa kobushushu anamandla, kodwa kwinkqubo yokuvelisa, kufuneka udibanise ukuhla kwe-insulation, inkqubo yokuvelisa inzima kwaye ibiza kakhulu, ngelixa iphakheji epheleleyo yeplastiki ukumelana ne-thermal inkulu, amandla okutshatyalaliswa kobushushu abuthathaka, kodwa inkqubo yokuvelisa ilula.

Ukuze kuncitshiswe inkqubo eyenziweyo yokutshixa izikrufu, kwiminyaka yakutshanje, ezinye iisistim zombane zisebenzisa iikliphu kumandla.Ii-MOSFETs ibambekile kwindawo yokutshisa ubushushu, ukuze ukuvela kwenxalenye yemveli ye-TO220 yendawo ephezulu yokukhutshwa kwemingxuma kwindlela entsha yokufaka i-encapsulation, kodwa nokunciphisa ukuphakama kwesixhobo.

Okwesine, ulawulo lweendleko

Kwezinye izicelo ezingabizi kakhulu njengeebhodi zomama zedesktop kunye neebhodi, amandla eMOSFETs kwiipakethe zeDPAK zihlala zisetyenziswa ngenxa yexabiso eliphantsi laloo phakheji. Ke ngoko, xa ukhetha iphakheji ye-MOSFET yamandla, idityaniswe nesitayile senkampani kunye neempawu zemveliso, kwaye uqwalasele ezi zinto zingasentla.

Okwesihlanu, khetha i-voltage yokumelana ne-BVDSS kwiimeko ezininzi, kuba uyilo lwevoumgangatho we-elektroniki Inkqubo ilungisiwe ngokwentelekiso, inkampani ikhethe umboneleli othile wenombolo ethile yezinto, imveliso yombane olinganiselweyo nayo ilungisiwe.

I-voltage yokuqhawula i-BVDSS yamandla e-MOSFETs kwi-database ichaze iimeko zokuvavanya, kunye namaxabiso ahlukeneyo phantsi kweemeko ezahlukeneyo, kwaye i-BVDSS ine-coefficient yokushisa efanelekileyo, kwisicelo sangempela sokudibanisa kwezi zinto kufuneka ziqwalaselwe ngendlela ebanzi.

Ulwazi oluninzi kunye noncwadi oluhlala lukhankanywa: ukuba inkqubo yamandla ye-MOSFET VDS yeyona ndawo iphezulu yombane we-spike ukuba inkulu kune-BVDSS, nokuba ixesha lombane we-spike pulse limbalwa okanye amashumi e-ns, amandla e-MOSFET aya kungena kwi-avalanche. kwaye ngaloo ndlela kwenzeka umonakalo.

Ngokungafaniyo ne-transistors kunye ne-IGBT, amandla e-MOSFETs anamandla okuxhathisa i-avalanche, kwaye iinkampani ezininzi ezinkulu ze-semiconductor amandla e-MOSFET amandla e-avalanche kumgca wemveliso kukuhlolwa okupheleleyo, ukufunyanwa kwe-100%, oko kukuthi, kwidatha oku kumlinganiselo oqinisekisiweyo, umbane we-avalanche. ngokuqhelekileyo kwenzeka ngo-1.2 ~ 1.3 amaxesha e-BVDSS, kwaye ubude bexesha buqhelekile ukuba ngu-μs, nkqu nenqanaba le-ms, ngoko ubude bexesha ezimbalwa kuphela okanye amashumi e-ns, ngaphantsi kakhulu kunombane we-avalanche spike pulse voltage ayingonakalisi kumandla we-MOSFET.

Ezintandathu, ngokhetho lombane wokuqhuba iVTH

Iinkqubo ezahlukeneyo zombane zamandla I-MOSFETs ezikhethiweyo zombane zokuqhuba azifani, umbane we-AC / DC uhlala usebenzisa i-voltage ye-12V yedrayivu, i-motherboard ye-motherboard DC / DC converter isebenzisa i-5V yombane wokuqhuba, ngoko ke ngokwenkqubo yombane yokuqhuba ukukhetha i-voltage eyahlukileyo. VTH amandla MOSFETs.

I-voltage ye-VTH yamandla e-MOSFETs kwi-database ichaza iimeko zovavanyo kwaye inamaxabiso ahlukeneyo phantsi kweemeko ezahlukeneyo, kwaye i-VTH ine-coefficient yeqondo lokushisa elibi. Iivolthi ezahlukeneyo zokuqhuba i-VGS zihambelana neentlobo ezahlukeneyo zokuchasana, kwaye kwizicelo ezisebenzayo kubalulekile ukuqwalasela ubushushu.

Kwizicelo ezisebenzayo, utshintsho lwamaqondo obushushu kufuneka luthathelwe ingqalelo ukuze kuqinisekiswe ukuba amandla e-MOSFET avulwe ngokupheleleyo, ngelixa kwangaxeshanye kuqinisekisa ukuba ii-spike pulses ezidityaniswe ne-G-pole ngexesha lokuvalwa kwenkqubo aziyi kuqalwa kukuxhokonxa ubuxoki. velisa i-straight-through okanye i-short-circuit.