Umahluko phakathi kwemveliso yamandla e-MOSFET kunye ne-bipolar output power crystal triode

Kule mihla, ngophuhliso olukhawulezayo lwesayensi kunye nethekhinoloji, i-semiconductors isetyenziswa kumashishini amaninzi, aphoI-MOSFET ikwathathwa njengesixhobo semiconductor eqhelekileyo, inyathelo elilandelayo kukuqonda ukuba yintoni umahluko phakathi kweempawu ze-bipolar power crystal transistor kunye nemveliso yamandla eMOSFET.

1, indlela yokusebenza

I-MOSFET ngumsebenzi ofunekayo ukukhuthaza amandla ombane osebenzayo, imizobo yesekethe ichaza ngokulula, ukukhuthaza amandla amancinci; amandla crystal transistor yi flow amandla ukukhuthaza uyilo inkqubo entsonkothileyo ngakumbi, ukukhuthaza ingcaciso yokhetho nzima ukukhuthaza ukuchazwa kuya kukubeka emngciphekweni unikezelo lwamandla iyonke isantya sokutshintsha.

I-2, isantya sokutshintsha sisonke sonikezelo lwamandla

I-MOSFET echatshazelwa yiqondo lobushushu incinci, amandla ombane okutshintsha umbane anokuqinisekisa ukuba ngaphezu kwe-150KHz; I-crystal transistor yamandla inexesha elincinci lokugcinwa kwentlawulo yasimahla, isantya sokutshintsha unikezelo lwamandla, kodwa amandla ayo okuphuma ngokuqhelekileyo akakho ngaphezu kwe-50KHz.

3, Indawo yokusebenza ekhuselekileyo

Amandla eMOSFET ayinaso isiseko sesibini, kwaye indawo yokusebenza ekhuselekileyo ibanzi; I-crystal transistor yamandla inesimo sesibini sesiseko, esinciphisa indawo yokusebenza ekhuselekileyo.

I-4, i-conductor yombane yokusebenza imfuneko yombane osebenzayo

AmandlaI-MOSFET yolohlobo lwamandla ombane aphezulu, imfuneko yokusebenza yombane iphezulu, kukho i-coefficient yobushushu obufanelekileyo; I-crystal transistor yamandla kungakhathaliseki ukuba ingakanani imali echasene nemfuno yokusebenza kwamandla ombane, i-electric conductor working imfuneko yokusebenza i-voltage iphantsi, kwaye ine-coefficient yeqondo lokushisa elibi.

I-5, ukuhamba kwamandla aphezulu

I-MOSFET yamandla ekutshintsheni unikezelo lwamandla ombane wesekethe yesekethe yonikezelo lwamandla njengombane wombane, ekusebenzeni kunye nomsebenzi ozinzileyo phakathi, ukuhamba kwamandla aphezulu kusezantsi; kunye ne-crystal transistor yamandla ekusebenzeni kunye nomsebenzi ozinzile phakathi, ukuhamba kwamandla aphezulu kuphezulu.

6. Iindleko zemveliso

Iindleko zamandla eMOSFET ziphezulu kancinci; ixabiso le-crystal triode yamandla ingaphantsi kancinane.

7, Isiphumo sokungena

I-MOSFET yamandla ayinayo impembelelo yokungena; I-crystal transistor yamandla inefuthe lokungena.

8, Ukutshintsha ilahleko

Ilahleko yokutshintsha kwe-MOSFET ayinkulu; amandla crystal transistor ukutshintsha ilahleko inkulu ngokwentelekiso.

Ukongeza, uninzi lwamandla eMOSFET adityanisiweyo adityanisiweyo afunxa ukothuka kwediode, ngelixa i-bipolar power crystal transistor phantse akukho diode edibeneyo efunxayo. yejelo lokhuseleko lokuhamba kwamandla. Ityhubhu yempembelelo yentsimi kwi-diode efunxayo umothuko kuyo yonke inkqubo yokucima kunye ne-diode ngokubanzi njengobukho bokubuyela umva ukugeleza kwangoku, ngeli xesha i-diode kwelinye icala lokuthatha idreyini - umthombo wepali elungileyo embindini omkhulu. ukunyuka kweemfuno zomsebenzi we-voltage yokusebenza, kwelinye icala, kunye ne-reverse recovery current flow.