Ingcaciso ebanzi yomzobo wemigaqo yokusebenza ye-MOSFET | Uhlalutyo lwesakhiwo sangaphakathi se-FET

I-MOSFET lelinye lawona macandelo asisiseko kwishishini le-semiconductor. Kwiisekethe ze-elektroniki, i-MOSFET isetyenziswa ngokubanzi kwiisekethe zeamplifier zamandla okanye kwiisekethe zobonelelo lwamandla kwaye isetyenziswa ngokubanzi. Ngezantsi,OLUKEYiya kukunika inkcazo eneenkcukacha zomgaqo wokusebenza we-MOSFET kwaye uhlalutye ubume bangaphakathi be-MOSFET.

Yintoni iI-MOSFET

I-MOSFET, i-Metal Oxide Semiconductor yeFayile yeFayile Transistor (MOSFET). I-transistor yempembelelo yentsimi enokuthi isetyenziswe ngokubanzi kwiisekethe ze-analog kunye neesekethe zedijithali. Ngokutsho kwe-polarity ye "channel" yayo (i-carrier esebenzayo), inokwahlulwa ibe ziindidi ezimbini: "N-uhlobo" kunye "nohlobo lwe-P", oluhlala lubizwa ngokuba yi-NMOS kunye ne-PMOS.

Umgaqo wokusebenza we-MOSFET

I-MOSFET inokohlulwa ibe luhlobo lophuculo kunye nodidi lokuncipha ngokwendlela yokusebenza. Uhlobo lophuculo lubhekisa kwi-MOSFET xa kungekho volyumu yokucalanye isetyenzisiweyo kwaye kungekho confumjelo ojikelezayo. Uhlobo lokuncipha lubhekiselele kwi-MOSFET xa kungekho mbane we-bias usetyenziswayo. Kuya kuvela umjelo wokuqhuba.

Kwizicelo ezizizo, kukho kuphela uhlobo lwe-N-channel yophuculo kunye nodidi lwe-P-channel yophuculo lwe-MOSFETs. Kuba ii-NMOSFET zinokuxhathisa okuncinci kurhulumente kwaye kulula ukwenza, i-NMOS ixhaphake kakhulu kune-PMOS kwizicelo zokwenyani.

Imo yophuculo MOSFET

Kukho imidibaniso emibini yokubuyela umva kwe-PN phakathi komsele D kunye nomthombo we-S wendlela yokuphucula i-MOSFET. Xa i-voltage yomthombo wesango i-VGS = 0, nokuba i-voltage ye-drain-source i-VDS yongezwa, kusoloko kukho i-PN junction kwi-state-biased state, kwaye akukho mjelo wokuqhuba phakathi kwe-drain kunye nomthombo (akukho misinga yangoku. ). Ngoko ke, i-id yangoku ye-ID=0 ngeli xesha.

Ngeli xesha, ukuba i-voltage yangaphambili yongezwa phakathi kwesango kunye nomthombo. Oko kukuthi, i-VGS> 0, ngoko intsimi yombane enesango elihambelana ne-P-type silicon substrate iya kuveliswa kwi-SiO2 insulating layer phakathi kwe-electrode yesango kunye ne-silicon substrate. Ngenxa yokuba i-oxide layer i-insulating, i-voltage VGS esetyenziswe kwisango ayikwazi ukuvelisa okwangoku. I-capacitor yenziwa kumacala omabini e-oxide layer, kwaye i-VGS yesekethe elinganayo ihlawulisa le capacitor (capacitor). Kwaye uvelise intsimi yombane, njengoko i-VGS inyuka ngokucothayo, itsalwa yi-voltage efanelekileyo yesango. Inani elikhulu le-electron liqokelela kwelinye icala le-capacitor (i-capacitor) kwaye yenze i-N-type conductive channel ukusuka kwi-drain ukuya kumthombo. Xa i-VGS idlula i-voltage ye-VT ye-tube (ngokubanzi malunga ne-2V), ityhubhu ye-N-channel iqala nje ukuqhuba, ivelisa i-ID yangoku ye-drain. Sibiza i-voltage yomthombo wesango xa itshaneli iqala ukuvelisa i-voltage yokuvula. Ngokuqhelekileyo ichazwa njenge-VT.

Ukulawula ubungakanani be-voltage yesango i-VGS itshintsha amandla okanye ubuthathaka bommandla wombane, kwaye umphumo wokulawula ubungakanani be-ID yangoku ye-drain inokufezekiswa. Oku kukwayinto ebalulekileyo yee-MOSFETs ezisebenzisa imimandla yombane ukulawula okwangoku, ngoko ke zikwabizwa ngokuba yi-field effect transistors.

Ubume bangaphakathi be-MOSFET

Kwi-P-type ye-silicon substrate ene-concentration yokungcola okuphantsi, imimandla emibini ye-N+ ene-concentration ephezulu yokungcola iyenziwa, kwaye i-electrode ezimbini zitsalwa nge-aluminium yentsimbi ukuze zisebenze njenge-drain d kunye nomthombo ngokulandelelana. Emva koko umphezulu we-semiconductor ugqunywe ngesilicon dioxide ebhityileyo kakhulu (SiO2) insulating layer, kwaye i-electrode ye-aluminium ifakwe kwi-insulating layer phakathi kombhobho kunye nomthombo ukuze usebenze njengesango g. I-electrode B nayo izotyiwe kwi-substrate, yenze i-N-channel yemowudi yokuphucula i-MOSFET. Kukwanjalo nangolwakhiwo lwangaphakathi lwe-P-channel yophuculo lohlobo lwe-MOSFETs.

N-channel MOSFET kunye P-channel MOSFET iisimboli zesekethe

Lo mfanekiso ungasentla ubonisa isimboli yesekethe ye-MOSFET. Emfanekisweni, uD ngumbhobho, uS ngumthombo, u-G lisango, kwaye utolo oluphakathi lumele i-substrate. Ukuba utolo lukhomba ngaphakathi, lubonisa i-N-channel MOSFET, kwaye ukuba utolo lukhomba ngaphandle, lubonisa i-P-channel MOSFET.

Iisimboli zesekethe ye-MOSFET ye-N-N-channel ezimbini, i-P-channel MOSFET kunye ne-N+P-channel MOSFET iisimboli zesekethe

Enyanisweni, ngexesha lenkqubo yokuvelisa i-MOSFET, i-substrate ixhunyiwe kumthombo ngaphambi kokushiya umzi-mveliso. Ke ngoko, kwimithetho yesimboli, isimboli sotolo esimele i-substrate kufuneka sidityaniswe nomthombo ukwahlula idrain kunye nomthombo. I-polarity yombane osetyenziswa yi-MOSFET iyafana ne-transistor yethu yemveli. I-N-channel ifana ne-NPN transistor. I-drain D ixhunywe kwi-electrode efanelekileyo kwaye umthombo we-S uxhunywe kwi-electrode engafanelekanga. Xa isango elingu-G linevoltheji evumayo, itshaneli yokuqhuba yenziwa kwaye i-N-channel MOSFET iqalisa ukusebenza. Ngokufanayo, i-P-channel ifana ne-PNP transistor. I-drain D ixhunywe kwi-electrode engalunganga, umthombo we-S uqhagamshelwe kwi-electrode efanelekileyo, kwaye xa isango G line-voltage engalunganga, i-channel conductive yenziwa kwaye i-P-channel MOSFET iqala ukusebenza.

Umgaqo welahleko wokutshintsha kwe-MOSFET

Ingaba i-NMOS okanye i-PMOS, kukho ukunyanzeliswa kwangaphakathi kwe-conduction eyenziwe emva kokuba ivuliwe, ukwenzela ukuba i-current idle amandla kule nkcaso yangaphakathi. Le nxalenye yamandla asetyenzisiweyo ibizwa ngokuba yi-conduction use. Ukukhetha i-MOSFET enokumelana okuncinci kwangaphakathi kuya kunciphisa ukusetyenziswa kokuqhuba. Uxhathiso lwangaphakathi lwangoku lwee-MOSFET ezinamandla aphantsi luqhelekile malunga namashumi eemiliyoni, kwaye kukho iimiliyoni ezininzi.

Xa i-MOS ivuliwe kwaye iphelisiwe, akufunekanga iphunyezwe ngephanyazo. I-voltage kumacala omabini e-MOS iya kuba nokuhla okusebenzayo, kwaye ikhoyo ngoku ehamba ngayo iya kuba nokunyuka. Ngeli xesha, ilahleko ye-MOSFET yimveliso ye-voltage kunye nekhoyo, eyona lahleko yokutshintsha. Ngokuqhelekileyo, ilahleko yokutshintsha inkulu kakhulu kunelahleko yokuqhuba, kwaye ngokukhawuleza ukutshintshwa rhoqo, ilahleko inkulu.

Imveliso ye-voltage kunye neyangoku ngexesha lokuqhuba inkulu kakhulu, ibangele ilahleko enkulu kakhulu. Ukutshintsha ilahleko kunokuncitshiswa ngeendlela ezimbini. Enye kukunciphisa ixesha lokutshintsha, elinokunciphisa ngokufanelekileyo ilahleko ngexesha lokuvula ngalinye; enye kukunciphisa i-frequency switching, enokunciphisa inani lokutshintsha ngexesha leyunithi.

Oku kungasentla yingcaciso eneenkcukacha zomzobo wemigaqo yokusebenza ye-MOSFET kunye nohlalutyo lobume bangaphakathi be-MOSFET. Ukufunda ngakumbi nge-MOSFET, wamkelekile ukudibana no-OLUKEY ukuze akubonelele ngenkxaso yobugcisa be-MOSFET!