Ukuqonda okuSisiseko kwe-MOSFET

I-MOSFET, imfutshane kwi-Metal Oxide Semiconductor Field Effect Transistor, sisixhobo se-semiconductor esine-terminal emithathu esebenzisa umphumo wentsimi yombane ukulawula ukuhamba kwangoku. Apha ngezantsi sisishwankathelo esisisiseko se-MOSFET:

1. Inkcazo kunye noHlelo

- Inkcazo: I-MOSFET sisixhobo se-semiconductor esilawula umjelo wokuqhuba phakathi kombhobho kunye nomthombo ngokutshintsha i-voltage yesango. Isango lifakwe i-insulated ukusuka kumthombo kwaye lidliwe ngumaleko wezinto ezikhuselayo (ngokuqhelekileyo i-silicon dioxide), yiyo loo nto ikwabizwa ngokuba yi-insulated gate field-effect transistor.

- Ukuhlelwa: Ii-MOSFET zihlelwa ngokusekwe kudidi lwejelo lokuqhuba kunye nefuthe lombane wesango:

- I-N-channel kunye ne-P-channel MOSFETs: Kuxhomekeke kuhlobo lwesitishi sokuqhuba.

- Imowudi yophuculo kunye neeMOSFET zemowudi yokuncipha: Ngokusekwe kwimpembelelo yombane wesango kumjelo wokuqhuba. Ke ngoko, ii-MOSFET zihlelwe ngokweendidi ezine: Imowudi yokuphucula i-N-channel, i-N-channel depletion-mode, i-P-channel yophuculo-imowudi, kunye ne-P-channel-depletion-mode.

2. Ulwakhiwo kunye noMgaqo wokuSebenza

- Ulwakhiwo: I-MOSFET inamacandelo amathathu asisiseko: isango (G), idrain (D), kunye nomthombo (S). Kwi-substrate ye-semiconductor ephantsi kancinci, indawo enedope kakhulu kunye nemimandla yokukhupha amanzi idalwe ngeendlela zokusetyenzwa kwe-semiconductor. Le mimandla ihlukaniswe ngoluhlu lwe-insulating, olufakwe kwi-electrode yesango.

- Umgaqo-nkqubo wokuSebenza: Ukuthatha i-N-channel-mode yokuphucula-imowudi ye-MOSFET njengomzekelo, xa umbane wesango unguziro, akukho mjelo wokuqhuba phakathi komsele kunye nomthombo, ngoko akukho msinga unokuhamba. Xa amandla ombane wesango anyuka ukuya kumgubasi othile (obizwa ngokuba yi-"turn-on voltage" okanye "threshold voltage"), umaleko okhuselayo ongaphantsi kwesango utsala ii-electron ukusuka kwi-substrate ukwenza umaleko wokuguqula (uhlobo lwe-N-uhlobo olubhityileyo) , ukudala umjelo wokuqhuba. Oku kuvumela i-current ukuba ihambe phakathi kwe-drain kunye nomthombo. Ububanzi balo mjelo wokuqhuba, kwaye ngoko ke i-drain current, inqunywe ngubukhulu be-voltage yesango.

3. Iimpawu eziphambili

- I-High Input Imedance: Ekubeni isango lifakwe kwi-impedance ukusuka kumthombo kunye ne-drain yi-insulating layer, i-impedance ye-insulating ye-MOSFET iphezulu kakhulu, iyenza ifaneleke kwiisekethe eziphezulu ze-impedance.

- Ingxolo ephantsi: Ii-MOSFETs zivelisa ingxolo ephantsi ngexesha lokusebenza, zizenza zilungele iisekethe ezineemfuno ezingqongqo zengxolo.

-Uzinzo oluLungileyo lweThermal: I-MOSFET inozinzo olubalaseleyo lwe-thermal kwaye inokusebenza ngokufanelekileyo kuluhlu olubanzi lwamaqondo obushushu.

- Ukusetyenziswa koMbane oPhantsi: Ii-MOSFET zisebenzisa amandla amancinane kakhulu kuzo zombini iindawo zokuvula nangaphandle, zizenza zilungele iisekethe zamandla aphantsi.

-Isantya esiphezulu sokutshintsha: Ukuba zizixhobo ezilawulwa ngamandla ombane, ii-MOSFET zibonelela ngesantya sokutshintsha ngokukhawuleza, nto leyo ezenza zibe zilungele iisekethe ezikwi-frequency ephezulu.

4. IiNdawo zokuSebenza

Ii-MOSFET zisetyenziswa ngokubanzi kwiisekethe ezahlukeneyo zombane, ngakumbi kwiisekethe ezidibeneyo, umbane wombane, izixhobo zonxibelelwano, kunye neekhompyuter. Zisebenza njengamacandelo asisiseko kwiisekethe zokukhulisa, iisekethe zokutshintsha, iisekethe zolawulo lombane, kunye nokunye, ukwenza imisebenzi efana nokukhulisa umqondiso, ulawulo lokutshintsha, kunye nokuzinzisa umbane.

Isishwankathelo, i-MOSFET sisixhobo esibalulekileyo se-semiconductor esinesakhiwo esisodwa kunye neempawu ezibalaseleyo zokusebenza. Idlala indima ebalulekileyo kwiisekethe zombane kumacandelo amaninzi.