Ukuchongwa kwe-MOSFET esisiseko kunye novavanyo

1.Ukuchongwa kwephini lokuhlangana kweMOSFET

Isango leI-MOSFET sisiseko se-transistor, kwaye idreyini kunye nomthombo ngumqokeleli kunye nomthumeli wetransistor ehambelanayo. I-multimeter ukuya kwi-R × 1k gear, kunye neepeni ezimbini zokulinganisa ukuchasana kwangaphambili kunye nokubuyisela umva phakathi kwezikhonkwane ezimbini. Xa i-pini-pini ehamba phambili yokuchasana = ukuchasana kwe-reverse = KΩ, oko kukuthi, izikhonkwane ezimbini zomthombo we-S kunye ne-drain D, intsalela yepini yisango G. Ukuba i-4-pinisiphambuka MOSFET, enye ipali kukusetyenziswa kwekhaka eliphantsi.

Ukuchongwa kwe-MOSFET esisiseko kunye novavanyo 拷贝

2.Qinisekisa isango　

Ngosiba olumnyama lwe-multimeter ukuchukumisa i-MOSFET i-electrode engahleliwe, ipeni ebomvu yokuchukumisa ezinye ii-electrode ezimbini. Ukuba zombini uxhathiso olulinganisiweyo luncinci, lubonisa ukuba zombini luxhathiso oluhle, ityhubhu yeye-N-channel MOSFET, uqhagamshelwano olufanayo losiba olumnyama lukwayisango.

Inkqubo yokuvelisa ithathe isigqibo sokuba i-drain kunye nomthombo we-MOSFET i-symmetrical, kwaye inokutshintshwa kunye nomnye, kwaye ayiyi kuchaphazela ukusetyenziswa kwesekethe, isekethe nayo iyinto eqhelekileyo ngeli xesha, ngoko akukho mfuneko yokuhamba. ukwahlula ngokugqithisileyo. Ukuchasana phakathi kwe-drain kunye nomthombo malunga namawaka ambalwa ohms. Akunakukwazi ukusebenzisa le ndlela ukumisela isango lohlobo lwe-MOSFET olugqunyiweyo. Ngenxa yokuba ukuchasana kwegalelo lale MOSFET kuphezulu kakhulu, kwaye i-inter-polar capacitance phakathi kwesango kunye nomthombo incinci kakhulu, umlinganiselo wexabiso elincinci lentlawulo, unokusekwa phezu kwe-inter-polar. amandla ombane aphezulu kakhulu, iMOSFET iya kuba lula ukuyonakalisa.

Ukuchongwa kunye novavanyo lwe-MOSFET esisiseko(1)

3.Ukuqikelela ukukwazi ukukhulisa ii-MOSFETs

Xa i-multimeter isetelwe ku-R × 100, sebenzisa ipeni ebomvu ukudibanisa umthombo S, kwaye usebenzise usiba olumnyama ukudibanisa idrain D, okufana nokongeza i-voltage ye-1.5V kwi-MOSFET. Ngeli xesha inaliti ibonisa ixabiso lokumelana phakathi kwe-DS pole. Ngeli xesha ngomnwe ukucinezela isango G, i-voltage eyenziwe ngumzimba njengophawu lokufaka isango. Ngenxa yendima yokukhulisa i-MOSFET, i-ID kunye ne-UDS iya kutshintsha, oku kuthetha ukuba ukuchasana phakathi kwe-DS pole kutshintshile, sinokubona ukuba inaliti inombhobho omkhulu wokujingisa. Ukuba isandla sitshiza isango, ukujingiwa kwenaliti kuncinci kakhulu, oko kukuthi, isakhono sokukhulisa iMOSFET sibuthathaka; ukuba inaliti ayinayo neyona ntshukumo incinci, ebonisa ukuba iMOSFET yonakele.