Malunga nomgaqo wokusebenza kwamandla MOSFET

Kukho iinguqulelo ezininzi zeesimboli zesekethe eziqhele ukusetyenziswa kwiiMOSFETs. Uyilo oluqhelekileyo ngumgca othe tye omele umjelo, imigca emibini ye-perpendicular kumjelo omele umthombo kunye ne-drain, kunye nomgca omfutshane ohambelana nomjelo ngakwesobunxele omele isango. Ngamanye amaxesha umgca othe tye omele ijelo uphinde uthatyathelwe indawo ngumgca oqhawukileyo ukwahlula phakathi kwemo yokuphuculamosfet okanye imosfet yokuncipha, ekwahlulahlulwe kwi-N-channel MOSFET kunye ne-P-channel MOSFET iindidi ezimbini zeesimboli zesekethe njengoko kubonisiwe kumfanekiso (indlela yotolo yahlukile).

IiMpawu zeSekethe ze-MOSFET ze-N-Channel

IiMpawu zeSekethe ze-MOSFET ze-P-Channel

Ii-MOSFET zamandla zisebenza ngeendlela ezimbini eziphambili:

(1) Xa amandla ombane akwi-positive yongezwa kwi-D kunye ne-S (i-drain positive, i-source negative) kunye ne-UGS=0, indawo yokuhlangana ye-PN kummandla womzimba we-P kunye nommandla we-drain we-N ubuyela umva, kwaye akukho kudlula ngoku phakathi kwe-D. kunye ne-S. Ukuba i-voltage echanekileyo ye-UGS yongezwa phakathi kwe-G kunye ne-S, akukho msinga wesango uya kuhamba ngenxa yokuba isango lifakwe i-insulated, kodwa i-voltage echanekileyo esangweni iya kutyhala imingxuma kude nommandla we-P ngaphantsi, kunye nomphathi omncinci. ii-electron ziya kutsaleleka kumphezulu wengingqi ye-P Xa i-UGS inkulu kune-voltage ethile ye-UT, ugxininiso lwe-electron kumphezulu wommandla we-P phantsi kwesango luya kudlula ugxininiso lomngxuma, ngaloo ndlela lwenza i-P-type semiconductor antipattern layer N- uhlobo lwesemiconductor; le antipattern umaleko wenza ijelo-uhlobo lwe-N phakathi komthombo kunye nedreyini, ukuze PN isiphambuka shwaka, umthombo kunye idreyini conductive, kunye idreyini ID yangoku uqukuqela idreyini. I-UT ibizwa ngokuba yi-voltage yokuvula okanye i-voltage ye-threshold, kwaye i-UGS idlula i-UT, i-conductive i-conductive capability, kunye ne-ID enkulu. I-UGS enkulu idlula i-UT, inamandla okuqhuba, i-ID enkulu.

(2) Xa i-D, i-S kunye ne-negative voltage (umthombo we-positive, i-drain negative), isiphambuka se-PN sibheke phambili, silingana ne-diode yangaphakathi engasemva (ayinazo iimpawu zokuphendula ngokukhawuleza), oko kukuthi,I-MOSFET ayinaso isakhono sokuvalela umva, inokuthathwa njengeekhomponi zokuqhuba eziguqukileyo.

NgeI-MOSFET umgaqo wokusebenza unokubonwa, ukuqhuba kwayo kuphela abathwali be-polarity ababandakanyekayo kwi-conductive, eyaziwa ngokuba yi-unipolar transistor.MOSFET drive isoloko isekelwe kwi-IC kunye ne-MOSFET parameters ukukhetha isiphaluka esifanelekileyo, i-MOSFET isetyenziselwa ukutshintsha. unikezelo lwamandla isekethe drive. Xa kuyilwa umbane otshintshayo usebenzisa i-MOSFET, abantu abaninzi bajonga ukuxhathisa, amandla ombane aphezulu, kunye nowona mbane uphezulu weMOSFET. Nangona kunjalo, abantu bahlala beqwalasela ezi zinto kuphela, ukwenzela ukuba isiphaluka sisebenze ngokufanelekileyo, kodwa ayisosisombululo esihle soyilo. Kuyilo oluneenkcukacha ezithe vetshe, i-MOSFET kufuneka kananjalo ithathele ingqalelo eyayo ipharamitha yolwazi. Kwi-MOSFET eqinisekileyo, isiphaluka sayo sokuqhuba, isantya esiphezulu sokuphuma kwe-drive, njl. njl., iya kuchaphazela ukusebenza kokutshintsha kwe-MOSFET.