I-WST8205 Dual N-Channel 20V 5.8A SOT-23-6L WINSOK MOSFET
Inkcazo ngokubanzi
I-WST8205 ngumsele wokusebenza okuphezulu kwe-N-Ch MOSFET enoxinaniso lweeseli eziphakamileyo kakhulu, ibonelela nge-RDSON egqwesileyo kunye nentlawulo yesango kuninzi oluncinci lokutshintsha kwamandla kunye nokulayisha usetyenziso. I-WST8205 ihlangabezana neemfuno ze-RoHS kunye neMveliso yoHlaza ngokuvunywa kokuthembeka okupheleleyo kokusebenza.
Iimbonakalo
Itekhnoloji yethu ephucukileyo ibandakanya izinto ezintsha ezenza esi sixhobo sahluke kwezinye kwimarike. Ngemingxuma ephezulu yoxinaniso lweeseli, obu bugcisa buvumela ukuhlanganiswa okukhulu kwamacandelo, okukhokelela ekusebenzeni okuphuculweyo kunye nokusebenza kakuhle.Enye inzuzo ephawulekayo yesi sixhobo yintlawulo yesango ephantsi kakhulu. Ngenxa yoko, ifuna amandla amancinci ukutshintsha phakathi kweendawo zayo zokuvula kunye nokuvala, okukhokelela ekunciphiseni kokusetyenziswa kwamandla kunye nokuphucula ukusebenza kakuhle. Olu phawu lwentlawulo yesango eliphantsi lwenza kube lukhetho olufanelekileyo kwizicelo ezifuna ukutshintshwa kwesantya esiphezulu kunye nolawulo oluchanekileyo.Ukongezelela, isixhobo sethu sigqwesa ekunciphiseni iziphumo ze-Cdv/dt. I-Cdv/dt, okanye umyinge wokutshintsha kwamandla ombane wokutsala amanzi ukuya kumthombo ngokuhamba kwexesha, inokubangela iziphumo ezingafunekiyo ezifana nezitshixo zombane kunye nokuphazamiseka kwe-electromagnetic. Ngokunciphisa ngempumelelo le miphumo, isixhobo sethu siqinisekisa ukusebenza okuthembekileyo kunye nokuzinza, nakwiindawo ezifunayo kunye neziguquguqukayo.Ngaphandle kobuchule bayo bobugcisa, esi sixhobo sinobungane bendalo. Yenziwe ngozinzo engqondweni, kuthathelwa ingqalelo izinto ezifana nokusebenza kwamandla kunye nokuphila ixesha elide. Ngokusebenza ngamandla awona mandla, esi sixhobo sinciphisa unyawo lwaso lwekhabhoni kwaye sibe negalelo kwikamva eliluhlaza.Ngokufutshane, isixhobo sethu sidibanisa itekhnoloji ephezulu kunye nemisele yokuxinana kweeseli, intlawulo yesango ephantsi kakhulu, kunye nokucuthwa okugqwesileyo kweziphumo zeCdv/dt. Ngoyilo lwayo oluhambelana nokusingqongileyo, ayinikezeli kuphela ukusebenza okuphezulu kunye nokusebenza kakuhle kodwa ihambelana nemfuno ekhulayo yezisombululo ezizinzileyo kwihlabathi lanamhlanje.
Usetyenziso
I-High Frequency Point-of-Load Synchronous Ukutshintsha kwamandla amancinci kwi-MB/NB/UMPC/VGA Networking DC-DC Power System,Ii-Automotive electronics, izibane ze-LED, iaudio, iimveliso zedijithali, izixhobo zekhaya ezincinci, i-electronics yabathengi, iibhodi ezikhuselayo.
inombolo yezinto ezihambelanayo
AOS AO6804A,NXP PMDT290UNE,PANJIT PJS6816,Sinopower SM2630DSC,dintek DTS5440,DTS8205,DTS5440,DTS8205,RU8205C6.
Iiparamitha ezibalulekileyo
| Uphawu | Ipharamitha | Ukukala | Iiyunithi |
| VDS | I-Drain-Source Voltage | 20 | V |
| VGS | Isango-Umthombo weVoltage | ±12 | V |
| ID@Tc=25℃ | Continuous Drin yangoku, VGS @ 4.5V1 | 5.8 | A |
| ID@Tc=70℃ | Continuous Drin yangoku, VGS @ 4.5V1 | 3.8 | A |
| IDM | I-Pulsed Drain yangoku2 | 16 | A |
| PD@TA=25℃ | Ukuchithwa koMbane ngokupheleleyo3 | 2.1 | W |
| TSTG | Uluhlu lobushushu boGcino | -55 ukuya kwi-150 | ℃ |
| TJ | Uluhlu lobushushu lweJunction Junction | -55 ukuya kwi-150 | ℃ |
| Uphawu | Ipharamitha | Iimeko | Min. | Isichwethezo. | Max. | Iyunithi |
| BVDSS | I-Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| △BVDSS/△TJ | I-Coefficient yoBubushushu be-BVDSS | Isalathiso ku-25℃ , ID=1mA | --- | 0.022 | --- | V/℃ |
| I-RDS(ON) | Static Drain-Umthombo on-Resistance2 | VGS=4.5V , ID=5.5A | --- | 24 | 28 | mΩ |
| VGS=2.5V , ID=3.5A | --- | 30 | 45 | |||
| VGS(th) | Umbane weSango iThreshold | VGS=VDS , ID =250uA | 0.5 | 0.7 | 1.2 | V |
| △VGS(th) | VGS(th) Umlinganiso wobushushu | --- | -2.33 | --- | mV/℃ | |
| IDSS | Ukuvuza kweMithombo yangoku | VDS=16V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Ukuvuza kweSango-Umthombo ngoku | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Phambili Transconductance | VDS=5V , ID=5A | --- | 25 | --- | S |
| Rg | Ukunyangwa kweSango | VDS=0V , VGS=0V , f=1MHz | --- | 1.5 | 3 | Ω |
| Qg | Intlawulo yeSango iyonke (4.5V) | VDS=10V , VGS=4.5V , ID=5.5A | --- | 8.3 | 11.9 | nC |
| Qgs | Intlawulo yeSango-Umthombo | --- | 1.4 | 2.0 | ||
| Qgd | Intlawulo yeSango-Drain | --- | 2.2 | 3.2 | ||
| Td(on) | Vula Ixesha lokulibaziseka | VDD=10V , VGEN=4.5V , RG=6Ω I-ID=5A, RL=10Ω | --- | 5.7 | 11.6 | ns |
| Tr | Ixesha lokunyuka | --- | 34 | 63 | ||
| Td(cima) | Ixesha lokulibazisa lokucinywa | --- | 22 | 46 | ||
| Tf | Ixesha Lokuwa | --- | 9.0 | 18.4 | ||
| Ciss | Igalelo Lobuchule | VDS=10V , VGS=0V , f=1MHz | --- | 625 | 889 | pF |
| Coss | Isakhono sokuPhuma | --- | 69 | 98 | ||
| Crss | UReverse Transfer Capacitance | --- | 61 | 88 |
