I-WST2088 N-channel 20V 8.8A SOT-23-3L WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:WST2088

BVDSS:20V

RDSON:8mΩ

Isazisi:8.8A

Isitishi:N-ijelo

Umqulu:SOT-23-3L

Imveliso yeHlobo:I-voltage ye-WST2088 MOSFET yi-20V, okwangoku yi-8.8A, ukuchasana ngu-8mΩ, umjelo ngu-N-channel, kunye nephakheji yi-SOT-23-3L.

Usetyenziso:Imidiza ye-elektroniki, izilawuli, izixhobo zedijithali, izixhobo zombane ezincinci zasekhaya, kunye nombane wabathengi.

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Iinkcukacha zeMveliso

Isicelo

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Inkcazo ngokubanzi

I-WST2088 MOSFETs zezona transistors ze-N-channel eziphambili kwimarike.Banoxinzelelo lweeseli eziphezulu ngokumangalisayo, ezikhokelela kwi-RDSON egqwesileyo kunye nentlawulo yesango.Ezi MOSFET zigqibelele kumandla amancinci okutshintsha kunye nokulayisha usetyenziso lokutshintsha.Bahlangabezana neemfuno ze-RoHS kunye neMveliso yoHlaza kwaye bavavanyelwe ngokupheleleyo ukuthembeka.

Iimbonakalo

Ubuchwephesha obukwinqanaba eliphezulu lomsele olunoxinaniso oluphezulu lweeseli, iCharge yeSango ePhantsi ePhantsi, kunye nesiphumo esibalaseleyo se-Cdv/dt siyehla, sisenza iSixhobo esiLuhlaza.

Usetyenziso

Ukusetyenziswa kwamandla, iisekethe ezinokutshintsha okuqinileyo kunye nokuphindaphinda okuphezulu, izixhobo zombane ezingaphazamisekiyo, i-e-cigarettes, izilawuli, izixhobo zombane, izixhobo zombane ezincinci zasekhaya, kunye nombane wabathengi.

inombolo yezinto ezihambelanayo

AO AO3416, DINTEK DTS2300A DTS2318 DTS2314 DTS2316 DTS2322 DTS3214, njl.

Iiparamitha ezibalulekileyo

Uphawu	Ipharamitha	Ukukala	Iiyunithi
VDS	I-Drain-Source Voltage	20	V
VGS	Isango-Umthombo wombane	±12	V
ID@Tc=25℃	Continuous Drin yangoku, VGS @ 4.5V	8.8	A
ID@Tc=70℃	Continuous Drin yangoku, VGS @ 4.5V	6.2	A
I-IDP	I-Pulsed Drain yangoku	40	A
PD@TA=25℃	Ukuchithwa kwamandla ngokupheleleyo	1.5	W
TSTG	Uluhlu lobushushu boGcino	-55 ukuya kwi-150	℃
TJ	Uluhlu lobushushu lweJunction Junction	-55 ukuya kwi-150	℃

Iimpawu zoMbane (TJ=25 ℃, ngaphandle kokuba kuphawulwe ngenye indlela)

Uphawu	Ipharamitha	Iimeko	Min.	Isichwethezo.	Max.	Iyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V, ID=250uA	20	---	---	V
△BVDSS/△TJ	I-Coefficient yoBubushushu be-BVDSS	Isalathiso ku-25℃, ID=1mA	---	0.018	---	V/℃
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=4.5V, ID=6A	---	8	13	mΩ
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=2.5V, ID=5A	---	10	19	mΩ
VGS(th)	Umbane weSango iThreshold	VGS=VDS , ID =250uA	0.5	---	1.3	V
IDSS	Ukuvuza kweMithombo yangoku	VDS=16V , VGS=0V.	---	---	10	uA
IGSS	Ukuvuza kweSango-Umthombo ngoku	VGS=±12V , VDS=0V	---	---	±100	nA
Qg	Intlawulo yeSango iyonke	VDS=15V , VGS=4.5V , ID=6A	---	16	---	nC
Qgs	Intlawulo yeSango-Umthombo		---	3	---
Qgd	Intlawulo yeSango-Drain		---	4.5	---
Td(on)	Vula Ixesha lokulibaziseka	VDS=10V , VGS=4.5V ,RG=3.3Ω ID=1A	---	10	---	ns
Tr	Ixesha lokunyuka		---	13	---
Td(cima)	Ixesha lokulibazisa lokucinywa		---	28	---
Tf	Ixesha Lokuwa		---	7	---
Ciss	Igalelo Lobuchule	VDS=15V , VGS=0V , f=1MHz	---	1400	---	pF
Coss	Isakhono sokuPhuma		---	170	---
Crss	UReverse Transfer Capacitance		---	135	---