I-WST2078 N&P Channel 20V/-20V 3.8A/-4.5A SOT-23-6L WINSOK MOSFET

inkcazelo emfutshane:

Inombolo yoMfanekiso:WST2078

BVDSS:20V/-20V

RDSON:45mΩ/65mΩ

Isazisi:3.8A/-4.5A

Isitishi:Ijelo leN&P

Umqulu:SOT-23-6L

Imveliso yeHlobo:I-WST2078 MOSFET inamazinga ombane angama-20V kunye nama-20V. Iyakwazi ukuphatha imisinga ye-3.8A kunye ne-4.5A, kwaye inemilinganiselo yokumelana ne-45mΩ kunye ne-65mΩ. I-MOSFET inezakhono zombini zeN&P Channel kwaye iza kwiphakheji ye-SOT-23-6L.

Usetyenziso:I-E-cigarettes, izilawuli, iimveliso zedijithali, izixhobo zombane, kunye nee-elektroniki zabathengi.

Thumela uMbuzo PDF

Iinkcukacha zeMveliso

Isicelo

Iithegi zeMveliso

Inkcazo ngokubanzi

I-WST2078 yeyona MOSFET yokutshintsha kwamandla amancinci kunye nokulayisha izicelo. Inoxinaniso lweeseli eziphezulu ezibonelela nge-RDSON egqwesileyo kunye nentlawulo yesango. Ihlangabezana neemfuno ze-RoHS kunye neMveliso eluhlaza kwaye ivunyiwe ukuthembeka okupheleleyo komsebenzi.

Iimbonakalo

Itekhnoloji ekwinqanaba eliphezulu elinemingxuma ephezulu yokuxinana kweeseli, intlawulo yesango ephantsi kakhulu, kunye nokucuthwa okugqwesileyo kweziphumo ze-Cdv/dt. Esi sixhobo sikwahambelana nokusingqongileyo.

Usetyenziso

Ukutshintsha kwamandla amancinci okuhambelana nesantya esiphezulu kukulungele ukusetyenziswa kwi-MB/NB/UMPC/VGA, uthungelwano lweenkqubo zamandla zeDC-DC, ukutshintshwa komthwalo, i-e-cigarettes, izilawuli, iimveliso zedijithali, izixhobo zombane ezincinci zasekhaya, kunye nabathengi. izinto zombane.

inombolo yezinto ezihambelanayo

AOS AO6604 AO6608,VISHAY Si3585CDV,PANJIT PJS6601.

Iiparamitha ezibalulekileyo

Uphawu	Ipharamitha	Ukukala		Iiyunithi
Uphawu	Ipharamitha	N-Channel	IP-Channel	Iiyunithi
VDS	I-Drain-Source Voltage	20	-20	V
VGS	Isango-Umthombo wombane	±12	±12	V
ID@Tc=25℃	Continuous Drin yangoku, VGS @ 4.5V1	3.8	-4.5	A
ID@Tc=70℃	Continuous Drin yangoku, VGS @ 4.5V1	2.8	-2.6	A
IDM	I-Pulsed Drain yangoku2	20	-13	A
PD@TA=25℃	Ukuchithwa koMbane ngokupheleleyo3	1.4	1.4	W
TSTG	Uluhlu lobushushu boGcino	-55 ukuya kwi-150	-55 ukuya kwi-150	℃
TJ	Uluhlu lobushushu lweJunction Junction	-55 ukuya kwi-150	-55 ukuya kwi-150	℃

Uphawu	Ipharamitha	Iimeko	Min.	Isichwethezo.	Max.	Iyunithi
BVDSS	I-Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	20	---	---	V
△BVDSS/△TJ	I-Coefficient yoBubushushu be-BVDSS	Isalathiso ku-25℃ , ID=1mA	---	0.024	---	V/℃
I-RDS(ON)	Static Drain-Umthombo on-Resistance2	VGS=4.5V , ID=3A	---	45	55	mΩ
		VGS=2.5V , ID=1A	---	60	80
		VGS=1.8V , ID=1A	---	85	120
VGS(th)	Umbane weSango iThreshold	VGS=VDS , ID =250uA	0.5	0.7	1	V
△VGS(th)	VGS(th) Umlinganiso wobushushu	VGS=VDS , ID =250uA	---	-2.51	---	mV/℃
IDSS	Ukuvuza kweMithombo yangoku	VDS=16V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Ukuvuza kweMithombo yangoku	VDS=16V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Ukuvuza kweSango-Umthombo ngoku	VGS=±8V , VDS=0V	---	---	±100	nA
gfs	Phambili Transconductance	VDS=5V , ID=1A	---	8	---	S
Rg	Ukunyangwa kweSango	VDS=0V , VGS=0V , f=1MHz	---	2.5	3.5	Ω
Qg	Intlawulo yeSango iyonke (4.5V)	VDS=10V , VGS=10V , ID=3A	---	7.8	---	nC
Qgs	Intlawulo yeSango-Umthombo		---	1.5	---
Qgd	Intlawulo yeSango-Drain		---	2.1	---
Td(on)	Vula Ixesha lokulibaziseka	VDD=10V , VGEN=4.5V , RG=6Ω I-ID=3A RL=10Ω	---	2.4	4.3	ns
Tr	Ixesha lokunyuka		---	13	23
Td(cima)	Ixesha lokulibazisa lokucinywa		---	15	28
Tf	Ixesha Lokuwa		---	3	5.5
Ciss	Igalelo Lobuchule	VDS=10V , VGS=0V , f=1MHz	---	450	---	pF
Coss	Isakhono sokuPhuma		---	51	---
Crss	UReverse Transfer Capacitance		---	52	---